Solid-state growth kinetics of Ni3Sn4 at the Sn–3.5Ag solder∕Ni interface
2005; American Institute of Physics; Volume: 98; Issue: 12 Linguagem: Inglês
10.1063/1.2149487
ISSN1520-8850
Autores Tópico(s)3D IC and TSV technologies
ResumoSystematic experimental work was carried out to understand the growth kinetics of Ni3Sn4 at the Sn–3.5Ag solder∕Ni interface. Sn–3.5%Ag solder was reflowed over Ni metallization at 240°C for 0.5min and solid-state aging was carried out at 150–200°C, for different times ranging from 0to400h. Cross-sectional studies of interfaces have been conducted by scanning electron microscopy and energy dispersive x ray. The growth exponent n for Ni3Sn4 was found to be about 0.5, which indicates that it grows by a diffusion-controlled process even at a very high temperature near to the melting point of the SnAg solder. The activation energy for the growth of Ni3Sn4 was determined to be 16kJ∕mol.
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