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Effect of the magnetic order on the room-temperature band-gap of Mn-doped ZnO thin films

2013; American Institute of Physics; Volume: 102; Issue: 10 Linguagem: Inglês

10.1063/1.4795797

1520-8842

Xiaolei Wang, Chunyan Luan, Qi Shao, Alina Prună, Chi Wah Leung, Rolf Lortz, Juan Antonio Zapien, A. Ruotolo,

Gas Sensing Nanomaterials and Sensors

Exchange interaction between localized magnetic moments mediated by free charge carriers is responsible for a non-monotonic dependence of the low-temperature energy band-gap in dilute magnetic semiconductors. We found that in weakly doped Mn-ZnO films, increasing the exchange interaction by increasing the concentration of free charge carriers results in a red-shift of the near-band-edge emission peak at room temperature. An increase of Mn concentration widens the band gap, and a blue-shift prevails. Exchange interaction can be used to tune the room-temperature optical properties of the wide-band gap semiconductor ZnO.