On the effect of ionization dead spaces on avalanche multiplication and noise for uniform electric fields
1990; American Institute of Physics; Volume: 67; Issue: 4 Linguagem: Inglês
10.1063/1.345596
ISSN1520-8850
Autores Tópico(s)CCD and CMOS Imaging Sensors
ResumoThe effect of the impact ionization dead space on avalanche multiplication and noise has been assessed for uniform p-i-n avalanche photodiodes. This has required the development of a new numerical technique. The well-established McIntyre theory of avalanche noise [IEEE Trans. Electron Devices ED-13, 164 (1966)], which neglects the ionization dead-space effect, has been shown to overestimate the excess noise factor. The implications of the dead-space effect, for ionization coefficient determination and the interpretation of measured excess noise factors, are discussed.
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