Profiling of electrical doping concentration in ferroelectrics
1997; American Institute of Physics; Volume: 82; Issue: 5 Linguagem: Inglês
10.1063/1.365766
ISSN1520-8850
AutoresF.K. Chai, J.R. Brews, Ronald D. Schrimpf, Dunbar P. Birnie,
Tópico(s)Ferroelectric and Piezoelectric Materials
ResumoIn this paper, the extraction of doping profiles in ferroelectric thin-film capacitors using ferroelectric capacitance–voltage (CV) measurements is studied. For a ferroelectric field-dependent permittivity model, the doping profile relation to measured CV curves for ferroelectric thin-film capacitors is found to be analogous to the well-known result of metal–semiconductor Schottky junctions with an easily determined effective dielectric constant. Computer simulation shows the electrical doping concentration of ferroelectric thin-film capacitors can be profiled accurately with the proposed model. Limitations of the model are investigated.
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