Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions
2011; American Institute of Physics; Volume: 98; Issue: 2 Linguagem: Inglês
10.1063/1.3536482
ISSN1520-8842
AutoresD. C. Worledge, G. Hu, David W. Abraham, J. Z. Sun, P. L. Trouilloud, J. Nowak, S. Brown, M. C. Gaidis, E. J. O’Sullivan, R. P. Robertazzi,
Tópico(s)Ferroelectric and Negative Capacitance Devices
ResumoSpin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta∣CoFeB∣MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta∣CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.
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