Silicon MBE: Recent developments
1986; Elsevier BV; Volume: 168; Issue: 1-3 Linguagem: Inglês
10.1016/0039-6028(86)90878-2
ISSN1879-2758
AutoresF. Arnaud d’Avitaya, S.L. Delage, E. Rosencher,
Tópico(s)Semiconductor materials and interfaces
ResumoSome examples of the capabilities of Si molecular beam epitaxy are reviewed. It is first demonstrated that electron irradiation enhances significantly the antimony doping efficiency. The second topic shows how the pre-oxidation of porous silicon allows the growth of defect-free silicon layers. Finally, Si/CoSi2/Si structures are examined and a method for determining the presence of pinholes in the silicide layer is presented.
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