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Shot Noise in Resonant Tunneling Through an Interacting Quantum Dot With Intradot Spin-Flip Scattering

2005; Institute of Electrical and Electronics Engineers; Volume: 4; Issue: 1 Linguagem: Inglês

10.1109/tnano.2004.840157

1941-0085

Ivana Djuric, Bing Dong, Hong‐Liang Cui,

Semiconductor materials and devices

In this paper, we present theoretical investigation of the zero-frequency shot noise spectra in electron tunneling through an interacting quantum dot connected to two ferromagnetic leads with possibility of spin-flip scattering between the two spin states by means of the recently developed bias-voltage and temperature dependent quantum rate equations. For this purpose, a generalization of the traditional generation-recombination approach is made for properly taking into account the coherent superposition of electronic states, i.e., the nondiagonal density matrix elements. Our numerical calculations find that the Fano factor increases with increasing the polarization of the two leads, but decreases with increasing the intradot spin-flip scattering.