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Documentos governamentais Acesso aberto

Volume 111 : Jan. 17, 1855-June 2, 1857

1857 - Gale Group | SASII

Artigo

Mike Paterson,

... of the crystal. Crystals oriented near [100] or [111] show a high rate of strain hardening, while ... easy glide”; in crystals oriented near the [100]–[111] and [100]–[110] boundaries, the rate of strain ... increases, while in those oriented near the [110]–[111] boundary the rate of strain hardening is more ... of slip lines, while in crystals oriented nearer [111] or [100] and showing rapid strain hardening the ... Les cristaux orientés au voisinage de [100] ou [111] possèdent un coefficient de consolidation élevé, tandis que ...

Tópico(s): Non-Destructive Testing Techniques

1955 - University of Toronto Press | Acta Metallurgica

Documentos governamentais Acesso aberto

1869, Foreign: Volume 111:1

0000 - Gale Group | NCCO AsiaWest

Artigo Revisado por pares

Anne Steinemann, Ulrich Zimmerli,

... melt, has been investigated: The polar character of {111} surfaces has been confirmed. The habitus of 〈211〉 ... proof of the different growth rates in opposite 〈111〉 directions. Pulling from a melt Ga1-xAsx with ... melt composition x0 = 0·50. Here, twinning on (111) planes (As) is much more sensitive to small ... As pressure or melt composition than twinning on (111) planes (Ga). The influence of seed orientation and ... möglichst stöchiometrischen Schmelze gezogen wurden: Die Polarität der {111} Flächen wurde bestätigt. Der Habitus von 〈211〉 Kristallen ...

Tópico(s): Ion-surface interactions and analysis

1963 - Elsevier BV | Solid-State Electronics

Documentos governamentais Acesso aberto

1874, Domestic: Volume 187:111

0000 - Gale Group | NCCO AsiaWest

Artigo Revisado por pares

William G. Bardsley, J.S. Boulton, D.T.J. Hurle,

... interface is composed of an array of small {111} planes. The particular {111} planes which predominate are those which lie nearest ... the plane of the interface is itself a {111} plane, the interface becomes faceted with macro-steps ... in the re-entrant corners formed by the {111} planes and that this liquid subsequently climbs down ... cellulaire est composé d'un ensemble de petits (111) plans. Les plans (111) particuliers prédominants se trouvent au plus près du ... plan d'interface est lui-même un plan (111), l'interface devient facettée de petites étapes enveloppantes. ...

Tópico(s): Ion-surface interactions and analysis

1962 - Elsevier BV | Solid-State Electronics

Documentos governamentais Acesso aberto

Volume 111

0000 - Gale Group | NCCO BritishPolitics

Artigo

G. Y. Chin,

... analyses have been made for slip on {110} 〈111〉 and {112} 〈111〉 systems, which are prominent slip systems in b. ... the case of nearest-neighbor interactions, (a) {110} 〈111〉 slip in both long- and short-range ordered ... direction of excess like-atom pairs; (b) {112} 〈111〉 slip, on the other hand, results in the ... case of next-nearest-neighbor interactions, (a) {110} 〈111〉 slip in both long- and short-range ordered ... no anisotropy is expected from slip in {112} 〈111〉 systems. The theory is applied to FeCo, whereby ... crystals of (001) [110], (115) [110], (112)[110], (111) [110] and (110) [110] orientations are calculated. Except ...

Tópico(s): Microstructure and Mechanical Properties of Steels

1966 - Elsevier BV | Materials Science and Engineering

handwritten Acesso aberto

Joseph Sturge,

... family . Committee members of the two societies. C 111/1-165

0000 - Gale Group | SAS Part 1

Artigo

W. L. Winterbottom, N.A. Gjostein,

... gold was found to be cusped at the {111} and {100} orientations with knife-edge grooves occurring along the zones between the 〈111〉 and 〈100〉 and the 〈111〉 and 〈110〉 poles. A qualitative similarity was found ... γ surface along the [110] zone near the [111] pole in the γ-plot. Good agreement was ... or montre un point de rebroussement aux orientations {111} et {100} avec des rayures en lame de ... lieu le long des zones entre les pôles 〈111〉 et 〈100〉 et les pôles 〈111〉 et 〈110〉. Une similitude qualitative a été trouvée ... long de la zone [110] jusqu'au pole [111] dans la courbe de γ. Une bonne concordance ...

Tópico(s): Metal and Thin Film Mechanics

1966 - University of Toronto Press | Acta Metallurgica

Documentos governamentais Acesso aberto

Volume 111 : Jan. 17, 1855-June 2, 1857

1857 - Gale Group | SASII

Artigo

Ken‐ichi Shimizu, Mariko Oka, C.M. Wayman,

... at the early stage of growth. The particular (111)A plane of the "associated" faults was found ... approximate) Kurdjumov-Saehs orientation relationship. Furthermore, the particular (111)a variant of stacking faults was associated with ... which make an angle of 25° with the (111)A plane. These relationships suggest that three 〈112〉A or 〈110〉A shears on a (111)A plane in the austenite may be involved ... between the {225}A martensite variants and the (111)A fault plane results from a stress interaction ... croissance. Les auteurs trouvent que le plan particulier (111)A des défauts "associés" est parallèle au plan ( ...

Tópico(s): Metallurgy and Material Forming

1970 - University of Toronto Press | Acta Metallurgica

Documentos governamentais Acesso aberto

Volume 111 : Jan. 17, 1855-June 2, 1857

1857 - Gale Group | SASII

Artigo Revisado por pares

FR Hartley,

The rate of uptake of chromium(111) by wool depends on the nature of the chromium(111) salt used and decreases in the order: chromium(111) fluoride > chromium(111) formate chromium(111) sulphate ≈ chromium(111) chloride. This order arises from a combination of differences in the rates of diffusion of chromium(111) salts into the fibre and differences in the rates of reaction of the chromium(111) species present with the carboxyl groups in wool. ... that the different rates of reaction of chromium(111) species with the carboxyl groups in wool are ...

Tópico(s): Photopolymerization techniques and applications

1970 - CSIRO Publishing | Australian Journal of Chemistry

Documentos governamentais Acesso aberto

Volume 111 : Jan. 17, 1855-June 2, 1857

1857 - Gale Group | SASII

Artigo

S.L. Sass,

... particles ∼10 Å in diameter in rows along 〈111〉β∥〈0001〉ω with a minimum interparticle spacing ... studies showed the presence in reciprocal space of {111} planes of diffuse intensity, which were related to the 〈111〉 row morphology. The 101̄0ω and 202̄0ω reflections were ... which the bcc structure becomes metastable relative to 〈111〉 longitudinal displacement waves which initiate the b.c. ... environ distribuées régulièrement en rangées le long de 〈111〉β ¦| 〈0001〉ω avec une distance minimum entre ... la présence, dans l'espace réciproque, de plans {111} de l'intensité diffusée que l'on peut ...

Tópico(s): Titanium Alloys Microstructure and Properties

1969 - University of Toronto Press | Acta Metallurgica

Documentos governamentais Acesso aberto

Volume 111 : Jan. 17, 1855-June 2, 1857

1857 - Gale Group | SASII

Artigo Revisado por pares

H. Blank, C. Ronchi,

Das Verhalten vollständiger Versetzungen in {100}-, {110}- und {111}-Gleitebenen wird aufgrund der Geometrie des Fluoritgitters von ... erzeugt werden können. Wegen der geringen Belegungsdichte der {111}-Ebenen gleiten die Teilversetzungen von aufgespaltenen Versetzungen meist nicht in den {111}-Ebenen sondern in komplizierten Ebenen, was auf nichtkristallographische Gleitung führt. Stapelfehler auf {111}-Ebenen lassen sich nicht in die zwei Typen “ ... behaviour of entire dislocations in {100}-, {110}- and {111}-glide planes in UO2 is discussed with respect ...

Tópico(s): Nuclear reactor physics and engineering

1969 - Elsevier BV | Journal of Nuclear Materials

Documentos governamentais Acesso aberto

Volume 111 : Jan. 17, 1855-June 2, 1857

1857 - Gale Group | SASII

Artigo Revisado por pares

A.Y. Cho, I. Hayashi,

... beam were varied during growth. On the GaAs (111) face a (111)-2 surface structure is interpreted in terms of an arsenic-rich surface condition and a (111)-√ 19 structure is interpreted in terms of a gallium-rich condition. Only the (111)-2 surface structure was observed on the (111) face. The presence of these different surface structures ... characteristics of the films grown with either a (111)-2 or a (111)-√ 19 structure present on the surface. The results ... observed on all epitaxial layers grown with the (111)-2 structure present on the surface. The peak ...

Tópico(s): GaN-based semiconductor devices and materials

1971 - Elsevier BV | Solid-State Electronics