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Artigo Revisado por pares

Xingji Li, Chaoming Liu, Jianqun Yang,

Based on 2N2222 NPN bipolar junction transistors (BJTs), synergistic effect between ionization and displacement defects induced by 3 MeV, 5 MeV ... induce the maximum degradation of current gain of 2N2222 NPN BJTs, while 3 MeV protons cause the ... displacement defect centers in based-collector junction of 2N2222 transistor induced by 3 MeV, 5 MeV and ...

Tópico(s): Advancements in Semiconductor Devices and Circuit Design

2015 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Nuclear Science

Artigo Acesso aberto Revisado por pares

Saurabh Shukla, Bhim Singh,

... oscilloscope (Agilent make DSO) is used. The transistor (2N2222) and opto-couplers (6N136) circuitry are used. The ...

Tópico(s): Solar Radiation and Photovoltaics

2018 - Institution of Engineering and Technology | IET Renewable Power Generation

Artigo Acesso aberto Revisado por pares

W.B. Wu, H.J. Zhou, Q.H. Zhou, Zhiming Zhao, G.R. Li, Q. Liu,

... BJT, a numerical model of a NPN BJT (2N2222) is developed with the semiconductor device simulation software ...

Tópico(s): Integrated Circuits and Semiconductor Failure Analysis

2023 - Institute of Physics | Journal of Instrumentation

Artigo Acesso aberto Revisado por pares

Myo Min Oo, N.K.A.M. Rashid, Julia Abdul Karim, Muhammad Rawi Mohamed Zin, Nurul Fadzlin Hasbullah,

... System) effect on silicon NPN bipolar junction transistors (2N2222 and NTE 123) and analysis of the transistors ...

Tópico(s): Electrostatic Discharge in Electronics

2013 - IOP Publishing | IOP Conference Series Materials Science and Engineering

Artigo Revisado por pares

Alexander S. Bakerenkov, Viacheslav S. Pershenkov, Vladislav A. Felitsyn, A S Rodin, Vitaly A. Telets, V.V. Belyakov, V.V. Shurenkov,

... enhanced low dose rate sensitivity (ELDRS) susceptibility of 2N2222 bipolar transistors and LM111 voltage comparators was investigated ...

Tópico(s): VLSI and Analog Circuit Testing

2017 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Nuclear Science

Artigo Acesso aberto

Adisak Monpapassorn,

... the current feedback opamp AD844 IC and the 2N2222 bipolar current mirror shows the good low frequency/ ...

Tópico(s): Low-power high-performance VLSI design

2018 - Scientific Research Publishing | Circuits and Systems

Artigo

Joseph A Walston,

... is provided by Motorola data sheets for the 2N2222 transistor. The second example considered is the data ...

Tópico(s): Semiconductor materials and devices

1991 - Institute of Electrical and Electronics Engineers | IEEE Circuits and Devices Magazine

Artigo Revisado por pares

Jun Liu, Pengdi Li, Qirong Zheng, Chuanguo Zhang, Yonggang Li, Yongsheng Zhang, Gaofeng Zhao, Xiaolan Yan, Bing Huang, Zhi Zeng,

... is applied to simulate the collector of the 2N2222 n-p-n silicon (Si) bipolar transistor under ...

Tópico(s): Advancements in Semiconductor Devices and Circuit Design

2022 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Nuclear Science

Artigo Revisado por pares

R. J. Maier,

... electron irradiation, the DC gain (hfE) of a 2N2222-A transistor following electron irradiation, and the fast ...

Tópico(s): Silicon and Solar Cell Technologies

1972 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Nuclear Science

Artigo

R. Gower,

... A comparison of the thermal impedance of the 2N2222 and 2N3725 and the beam-lead equivalents of ...

Tópico(s): Radio Frequency Integrated Circuit Design

1972 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Parts Hybrids and Packaging

Artigo Revisado por pares

... A comparison of the thermal impedance of the 2N2222 and 2N3725 and the beam-lead equivalents of ...

Tópico(s): Radio Frequency Integrated Circuit Design

1973 - Elsevier BV | Microelectronics Reliability

Artigo Revisado por pares

Hassan Hajghassem, W.D. Brown, John G. Williams,

... as an indicator in neutron dosimetry. 2N2484 and 2N2222 npn bipolar transistors were subjected to 1 MeV ...

Tópico(s): Radiation Detection and Scintillator Technologies

1991 - Elsevier BV | Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Artigo Revisado por pares

Diana Janeth Lancheros Cuesta, Astrid Rubiano,

... dos puentes en h, construidos con los transistores 2n2222 y TIp 127. Para la evaluacion del software ...

Tópico(s): Educational Innovations and Technology

2010 - Wiley | Journal of Engineering Education

Artigo

Anuj Srivastava, Ashok Kumar, Rajiv Kumaran,

... with cryo-coolers. These sensors have an inbuilt 2N2222 diode-based cooler temperature sensor (CTS). This paper ...

Tópico(s): Spectroscopy and Laser Applications

2024 - Taylor & Francis | IETE Journal of Research

Artigo Acesso aberto Revisado por pares

Hantao Xu, Baiyu Liu, Yongsheng Gou, Jinshou Tian, Yang Yang, Penghui Feng, Xu Wang, Shiduo Wei,

... components, which consists of combining avalanche transistor model 2N2222 with a hybrid Marx structure at the same ...

Tópico(s): Plasma Applications and Diagnostics

2023 - Multidisciplinary Digital Publishing Institute | Electronics

Artigo Acesso aberto

Manish Kumar,

... Transformer. The Oscillator is implemented by using the 2N2222 Transistors, amplifier is implemented by MOSFET's IRF630, ...

Tópico(s): Advanced DC-DC Converters

2021 - International Journal for Research in Applied Science and Engineering Technology (IJRASET) | International Journal for Research in Applied Science and Engineering Technology