Andrew Robson, Matt Dickinson Chief Sports Correspondent, Alyn Shipton, David Wighton, Alexi Mostrous, Geoffrey Wyborn, Andrew Billen, Canon David Sharp, Leo Lewis Asia Business Correspondent, Patrick Foster Media Correspondent, Neil Johnston, Stephen Allen, Tom Dyckhoff, David Aaronovitch, David Wighton Business Editor, Alexandra Blair, Peter Lansley, Robert Lindsay, Mark Souster, Catherine Boyle, David Rose, Philip Howard, Hilary Finch, Jonny Wilkinson, Sir Roy McNulty, Christine Seib, David Chater, Professor Colin Leach, Ben Hoyle Arts Reporter, James Ducker, Rachel Campbell-Johnston, G. R. Steele, Carl Mortished, Gráinne Gilmore Economics Correspondent, Sam Marlowe, Grace Jones, James Hider, Geoff Brown, Martin Samuel Chief Football Correspondent, Andrew Norfolk, David Sharrock, Vivienne Parry, Martin Fletcher, Sathnam Sanghera, Ben Webster Transport Correspondent, Frank Pope, Ocean Correspondent, Rob Crilly, Rachel Sylvester, Jack Malvern, Laurence Graff, Jamie Stevenson, Dan Sabbagh Media Editor, Tim Reid, Beth Cooper, Dr Geoffrey Chapman Headmaster, Graham Baldwin, Roger MacDonald, Phil Gordon, Valerie Elliott Consumer Editor, Bridgadier Ian G. Townsend, Graham Keeley, Derwent May, Richard Hobson Deputy Cricket Correspondent, Russell Kempson, Graham Spiers, Clive Thompson, Suzy Jagger, Oliver Kay, Alan Hooker, Ross Clark, Lisa Armstrong, Mark Henderson Science Editor, Patrick Hosking Banking and Finance Editor, Scott Rutherford, Sam Coates, Ann Treneman, Simon de Bruxelles, Rob Wright, Patrick Stevens, Raymond Keene, Robin Jackson Chief Executive and Secretary, Matt Hughes, Catherine Philp Diplomatic Correspondent, Christine Buckley Industrial Editor, Dr Tanya Byron, Jeremy Page, Chris Campling, Bronwen Maddox, Patrick Hosking, David Lewis, Lindsey Bareham, Damian Whitworth, Marcus Leroux, Erica Wagner, Alan Shaw, Peter Dixon, Nick Hasell, David Hands Rugby Correspondent, James Collard, Paul Simons, Adam Fresco, Amy Raphael, Heidi Hankinson, Philip Webster Political Editor, Sam Coates Chief Political Correspondent, Ian King Deputy Business Editor, Emily Ford, Dominic Maxwell, Helen Power, Russell Jenkins, Alan Lee, Sir Donald Spiers, Peter Riddell, John Wilson, Christopher Furlong, Joe Clay, Martin Waller, Lewis Smith Environment Reporter, Chris Ayres, Carl Mortished World Business Editor, Veronica Schmidt, Benedict Nightingale, Joan McFadden, Stephen Dalton, Richard Morrison, Frances Gibb, Tony Halpin, Adam Sherwin, Roger Middleton, Olav Bjortomt, John Bebbington,
... Congo? Carsten Höller thinks so, he tells James Collard Buy me The kids are all right — shame ...
2008 - Gale Group | TDA
B. Baccus, Dominique Collard, Emmanuel Dubois,
An adaptive mesh refinement technique is proposed for a two-dimensional finite-element multilayer process simulator. Mesh refinement is based on the dopant concentration ratio inside each element, together with a prediction technique, minimizing the interpolation errors. A significant reduction in CPU time is obtained by automatic grid refresh. Several methods were tested. The mesh adequacy is evaluated with bipolar test structures using analytical punch-through voltage calculations. Applications ...
Tópico(s): Advanced Numerical Methods in Computational Mathematics
1992 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
From Tony Allaway, , By Richard Owen, From Richard Ford Belfast, By a Staff Reporter, By Pat Healy, Social Services Correspondent, From Richard Davy and Dessa Trevisan, , From Nicholas Ashford, , By Paul Routledge, Labour Editor, From David Felton, Labour Reporter, , From Christopher Thomas, , By Philip Webster Political Staff, By Edward Townsend, By Donald Macintyre, Labour Reporter, By George Clark Political Correspondent, By Geraldine Norman Sale Room Correspondent, By Peter Evans, Home Affairs Correspondent, By David Spanier, Richard Owen and Craig Seton, By Lucy Hodges, From Our Correspondent, Nottingham, From Our Correspondent Sheffield, By Christopher Warman Local Government Correspondent, From Arthur Osman, , By Peter Hennessy, By Philip Webster, Political Staff, By Kenneth Gosling, From Paul Routledge, By Martin Huckerby Theatre Reporter, From Ian Murray, , From Charles Hargrove, From Michael Hornsby, , From Patricia Clough, , From Eric Marsden, , From Michael Leapman, By Our Foreign Staff, From Our Own Correspondent, , From Christopher Walker, , From Robert Fisk, By Peter Nichols, , From Richard Wigg, , From Trevor Fishlock, From Paul Routledge, , From Patrick Brogan, , From Neil Kelly., From Our Own Correspondent, By the Staff of Nature, Fiances Gibb, Diana Geddes Education Correspondent, Irving Wardle, John Percival, Ned Chaillet, Martin Huckerby, Patrick J. Smith, Joan Bakewell, Hilary Finch, Kenneth Loveland, Richard Williams, Ronald Lewin, Jan Morris, Gay Firth, Tom Hutchinson, Vernon Bogdanor, Louis Heren, Anthony Holden, A. M. Rendel, by Alfred Sherman, by Julian Haviland, Political Editor, Peter Watson, Tony Allaway, Ronald Butt, ADRIAN KENNEDY, , MICHAEL COWAN, , A. KALEEM QURESHI, , EDMUND NEVILLE-ROLFE, , FRANK FISHER, , G.M. MACKAY, , G. W. MARSHALL, , C. C. H DUNLOP, , CHRISTOPHER H. W. GANE, , R. P. H. DAVIES, , DAVID ROSS, , MARGARET HERATY, , Miles Kington, Colleagues write:, From Our Correspondent, , K. T., A correspondent, By Richard Streeton, From a Special Correspondent, From John Hennessy Golf Correspondent, By Jerome Caminada, By Keith Macklin, By John Nicholls, By a Special Correspondent, By John Karter, By Peter Hill, By Ronald Pullen, By Our Commodities Correspondent, From Peter Norman, , By Frances Williams, By Michael Prest, By Our Industrial Editor, By Rosemary Unsworth, By Clifford Webb, By Bill Johnstone, By Richard Allen, By Derek Harris, Commercial Editor, By Baron Phillips, By Michael Prest, Mining Correspondent, By Our Commercial Editor, BEN FORD, , NICHOLAS R. WINTERTON, , KEN WOOLMER, , JOHN P. CALLEN, , R. COLLARD, , BY THE FINANCIAL EDITOR, Ross Davies, John Whitmore, Ivor Davis, By Catherine Gunn, Edited by Peter Davalle, By George Clark, Political Correspondent, By Nicholas Timmins,
... 800m record by over half a second, Rowing Emmanuel catch Selwyn in the Gut, Show jumping Fernyhough ...
1981 - Gale Group | TDA
Emmanuel Collard, C Lejeune, J.P. Grandchamp, Jean-Paul Gilles, P. Scheiblin,
Highly selective SiO2/Si reactive ion beam etching was achieved from a newspecific ion gun, the electrostatic reflex ion source operated with either CHF3 or CF4 An extensive fragmentation of the neutrals may be obtained. The beam energy dependence of SiO2 and silicon etch rates as studied using profilometry and on-line variations of SiF4 partial pressure. Surface modifications of single-crystal silicon were characterized by Auger sputter profiling and metal-Si contact electrical evaluation. It is ...
Tópico(s): Semiconductor materials and devices
1990 - Elsevier BV | Thin Solid Films
Andrew Robson, Phil Yates, Giles Tremlett, Raymond Snoddy Media Editor, David Charter Health Correspondent, Arnold Greenwood, James Moore, Zahid Hussain, Frances Gibb Legal Editor, Stephen Farrell and Michael Binyon, Simon Barnes, Peter Lansley, George Pendle, John J. Putnam, Bernard Kaukas, Mike O'carroll, Michael Evans Defence Editor, Jane Bolton, Philip Howard, Hannah Betts, Hilary Finch, David Chater, James Bone, Clive Davis, Joanna Bale and Russell Jenkins, Richard Irving, Gabrielle Starkey, Rosalind Renshaw, Debra Bell, Kevin Eason, James Eve, Joe Joseph, Giles Coren, John O'Leary Education Editor, Ben Webster Transport Correspondent, Valerie Elliott Countryside Editor, Donald Hutera, Dominic Walsh, Debra Craine, Alix Ramsay Tennis Correspondent, Tim Reid, Martin Barrow, Dalya Alberge Arts Correspondent, Peter Ackroyd, Harry Crawford, Alan Hamilton, Oliver Wright, Robin Young, Tom Baldwin and Elinore Wellwood, Denis Christian, Roland Watson, Charles Bremner, Helen Rumbelow, Greg Hurst, Peter Barnard, Rose Rouse, Shirley Conran, Caroline Merrell Banking Correspondent, James Doran City Correspondent, Angela Jameson, George Caulkin and Russell Kempson, Russell Kempson, Paula Hawkins, Richard Taylor, Cyril Townsend (Director), Jonathan Fenby, Daniel McGrory, Richard Cork, Oliver Kay, Ed Potton, Ian Magee, Rick Broadbent, Mark Griffiths Horticultural Correspondent, Jill Sherman Whitehall Editor, Sam Coates, John Hopkins, Marit Hargie, Milo Keynes, Karen Homer, Rob Wright, Michael Kidson, Marcel Berlins, Legal Correspondent, Raymond Keene, Simon Brilliant, Clive Mathieson, Marco Pierre White, John Russell Taylor, Judy Mead, Richard Ford and Stewart Tendler, George Szirtes, Christine Buckley Industrial Editor, Michael Dynes Africa Correspondent and Danna Harman, Greg Hurst Parliamentary Correspondent, Catherine Riley Fitness Editor, Christopher Walker Chief Ireland Correspondent, Damian Whitworth, Tola Awogbamiye, Matthew Parris Parliamentary Sketch, Roger Boyes, Nick Hasell, Ansel Harris, David Hands Rugby Correspondent, James Collard, Mike Mulvihill, Nick Szczepanik, Michael Theodolou, Anne Ashworth, Mary Ann Sieghart, Philip Webster Political Editor, D. Pryer, Adam Jones and Angela Jameson, Gerald Larner, Deborah King, Anne Lunn, Anjana Ahuja, Alan Lee, Iain Finlayson, Peter Riddell, Ben MacIntyre, Lea Paterson Economics Editor, Russell Jenkins and Damian Whitworth, Gavin Turk, Richard Beeston Diplomatic Editor, Michael Dynes, Melissa Lawrence, Simon Jenkins, Lea Paterson, Gary Duncan Economics Correspondent, Martin Waller, James Jackson, Carl Mortished International Business Editor, Alan Coren, Nigel Hawkes Health Editor, Russell Celyn Jones, Frances Gibb, Alice Miles, Arthur Leathley, Edward Garnier, Adam Sherwin, Philip Webster Valerie Elliott and Tom Baldwin, Tom Baldwin Deputy Political Editor, Robert Whymant, Alan Lee Racing Correspondent, Sally Patten, Roland Watson Chief Political Correspondent, Douglas Kennedy, Sally Patten Retail Correspondent, Patience Wheatcroft, John Rotheroe,
... 80 80 Dreadfully ordinary psychopath The Adversary By Emmanuel Carrère Bloomsbury, £14.99 ISBN 0 7475 5189 ...
2001 - Gale Group | TDA
Christophe Cardinaud, G. Turban, B. Grolleau, J.P. Grandchamp, C Lejeune, P. Scheiblin, Emmanuel Collard,
A comparative study of silicon damage and overlayer formation with CHF3 reactive ion etching and reactive ion beam etching is performed. Fluorine XPS F1s spectra reveal a contribution characteristic of the first residue layers. The effect of the ion bombardment, concerning the amorphization of the subsurface is established with precision. Bombardment by energetic ions ( > 100 eV ) is necessary to induce the formation of a silicon carbide at the interface, but this condition is not sufficient; the neutral ...
Tópico(s): Semiconductor materials and devices
1989 - Elsevier BV | Applied Surface Science
Xi Song, Jean-François Michaud, F. Cayrel, Marcin Zieliński, Marc Portail, Thierry Chassagne, Emmanuel Collard, Daniel Alquier,
In this paper, we demonstrate the high electrical activity of extended defects found in 3C–SiC heteroepitaxially grown layer on (100) silicon substrates. Cross-sectional scanning transmission electron microscopy analysis was performed to reveal the defects while scanning spreading resistance microscopy aimed to study their electrical behavior. Using this technique, complete layer resistance cartography was done. The electrical activity of the extended defects in 3C–SiC was clearly evidenced. Furthermore, ...
Tópico(s): Semiconductor materials and interfaces
2010 - American Institute of Physics | Applied Physics Letters
Georgio El-Zammar, Arnaud Yvon, Wahid Khalfaoui, Maher Nafouti, F. Cayrel, Emmanuel Collard, Daniel Alquier,
In this work, non-recessed and Au-free low resistance Ohmic contacts are investigated on AlGaN/GaN on silicon. Based on Ti/Al bilayers, Circular TLM are fabricated and contact values are extracted varying different parameters such as single and combined annealing temperatures and surface treatment. Alloy formation upon annealing has been monitored by XRD. The results indicated that two phases, Ti3AlN and cubic TiAl3, have been formed upon annealing. Furthermore, the increase of Al thickness (up to ...
Tópico(s): Semiconductor materials and devices
2017 - Elsevier BV | Materials Science in Semiconductor Processing
Olivier Ménard, F. Cayrel, Emmanuel Collard, Daniel Alquier,
Abstract In this work, Schottky barrier diodes (SBD), made using lift‐off process, were realized on low doped n‐type GaN grown by MOCVD. Schottky to Schottky structures were first realized, allowing to select convenient process parameters that reduce the leakage current, such as surface cleaning, thickness of the metallic contact and annealing time or temperature. Then, planar Schottky diodes were patterned and characterized to extract barrier height and ideality factor. Results show that good rectifying ...
Tópico(s): Semiconductor Quantum Structures and Devices
2009 - Wiley | Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
Anne Elisabeth Bazin, Jean-François Michaud, Cécile Autret-Lambert, F. Cayrel, Thierry Chassagne, Marc Portail, Marcin Zieliński, Emmanuel Collard, Daniel Alquier,
For electronic devices, good ohmic contacts are required. To achieve such contacts, the semiconductor layer has to be highly doped. The only method available to locally dope the SiC is to implant dopants in the epilayer through a mask. In this work, non-intentionally doped 3C–SiC epilayers were implanted using nitrogen or phosphorus at different energies and subsequently annealed at temperatures between 1150 °C and 1350 °C in order to form n+ implanted layers. Different techniques such as Fourier ...
Tópico(s): Semiconductor materials and devices
2010 - Elsevier BV | Materials Science and Engineering B
Xi Song, J. Biscarrat, Jean-François Michaud, F. Cayrel, Marcin Zieliński, Thierry Chassagne, Marc Portail, Emmanuel Collard, Daniel Alquier,
In this work, non-intentionally doped cubic silicon carbide (3C-SiC) epilayers grown on (1 0 0) silicon substrates were implanted using nitrogen (N), phosphorus (P) implantations or their co-implantation (N&P). After annealing from 1150 to 1400 °C, Secondary Ion Mass Spectroscopy (SIMS), Atomic Force Microscopy (AFM), Fourier Transformed InfraRed spectroscopy (FTIR), Scanning Spreading Resistance Microscopy (SSRM) and Scanning Transmission Electron Microscopy (STEM) analysis were performed. Specific contact ...
Tópico(s): Semiconductor materials and interfaces
2011 - Elsevier BV | Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
F. Cayrel, Anne Elisabeth Bazin, Mohamed Lamhamdi, Y. Benchanaa, O. Ménard, Arnaud Yvon, Emmanuel Collard, Daniel Alquier,
Abstract Gallium nitride (GaN) is a promising material for power electronic devices. Due to GaN sensitivity to high temperature treatments, dopant activation, after ion implant, is one of the major critical steps to be overcome. An annealing cap layer is then mandatory during high temperature treatment to avoid degradations. In this work, cap layers, such as AlN and SiO x , were deposited on Si-implanted N-type GaN. Samples were annealed using both classical (FA) and rapid thermal (RTA) annealing for ...
Tópico(s): Semiconductor materials and devices
2011 - Elsevier BV | Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
Daniel Alquier, F. Cayrel, Olivier Ménard, Anne-Elisabeth Bazin, Arnaud Yvon, Emmanuel Collard,
In this work, both “Schottky to Schottky” structure (STS) and pseudo-vertical Schottky barrier diode (pv-SBD) have been processed on GaN heteroepitaxially grown on sapphire or silicon by metal organic chemical vapor deposition (MOCVD) and characterized physically and electrically. Ni and Ti/Al were used to obtain respectively Schottky and Ohmic contacts using rapid thermal annealing (RTA). Adequate passivation steps and insertion of a resistive guard ring were also implemented in pv-SBD. The STS results, ...
Tópico(s): Semiconductor materials and devices
2012 - Institute of Physics | Japanese Journal of Applied Physics
Anne Elisabeth Bazin, Jean-François Michaud, F. Cayrel, Marc Portail, Thierry Chassagne, Marcin Zieliński, Emmanuel Collard, Daniel Alquier, Gabriel Ferro, P. Siffert,
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation A. E. Bazin, J. F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, D. Alquier; High Quality Ohmic Contacts on n‐type 3C‐SiC Obtained by High and Low Process Temperature. AIP Conf. Proc. 1 November 2010; 1292 (1): 51–54. https://doi.org/10.1063/1.3518309 Download ...
Tópico(s): Aluminum Alloys Composites Properties
2010 - American Institute of Physics | AIP conference proceedings
Christine Reynaert, Pascal Janne, V. Délire, Michelle Pirard, Ph. Random, E. Collard, Etienne Installé, Emmanuel Coche, L. Cassiers,
We postulated that patients with an internal locus of control, i.e. those who like to control their health problems themselves, would adapt more adequately to the 'patient-controlled analgesia' technique as compared to patients with an external health locus of control, who do not believe in their own control. Since contradicting studies have been published on this matter, we investigated relations between the demand for analgesics, perceived pain in the postoperative phase, and the health locus of ...
Tópico(s): Opioid Use Disorder Treatment
1995 - Karger Publishers | Psychotherapy and Psychosomatics
Olivier Ménard, F. Cayrel, Emmanuel Collard, Daniel Alquier,
In this work, Ti/Al bilayer sputtered ohmic contacts on n-type Gallium Nitride films were studied as a function of process parameters such as Ti thickness, surface cleaning procedure or annealing temperature. Epilayers, with doping concentration of 5.8x1018 at.cm-3, were grown on sapphire using AlN buffer layer. Electrical characterizations were made using circular Transfer Length Method (cTLM) patterns with a four probes equipment. Specific Contact Resistance (SCR) was then extracted for all the ...
Tópico(s): Semiconductor materials and interfaces
2009 - Trans Tech Publications | Materials science forum
Georgio El-Zammar, Wahid Khalfaoui, Thomas Oheix, Arnaud Yvon, Emmanuel Collard, F. Cayrel, Daniel Alquier,
Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiOx) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced ...
Tópico(s): ZnO doping and properties
2015 - Elsevier BV | Applied Surface Science
Anne Elisabeth Bazin, Thierry Chassagne, Jean-François Michaud, A. Leycuras, Marc Portail, Marcin Zieliński, Emmanuel Collard, Daniel Alquier,
In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different nitrogen doping levels. The epilayers were grown on (100) silicon. Doping level (N) and eventual dopant contamination (Al) were analyzed by C-V and/or SIMS. The specific contact resistance was determined by using Transmission Line Model (TLM) patterns for each condition (doping and annealing). Our results clearly evidence that very low specific contact resistance (~10-51. ...
Tópico(s): Semiconductor materials and devices
2007 - Trans Tech Publications | Materials science forum
F. Cayrel, O. Ménard, Arnaud Yvon, Nicolas Thierry‐Jebali, C. Brylinsky, Emmanuel Collard, Daniel Alquier,
Abstract In this work, the Ti/Al Ohmic contact quality on n‐type gallium nitride (GaN) films has been studied as a function of different process parameters such as surface cleaning procedure, etching, thickness of the deposited layers or annealing conditions. GaN epilayers, with uniform doping concentration from 1 × 10 16 to 5.8 × 10 18 at./cm 3 were grown on sapphire or silicon substrates using AlN and/or AlGaN buffer layers. Electrical characterizations were made using circular transfer length method ( ...
Tópico(s): Metal and Thin Film Mechanics
2012 - Wiley | physica status solidi (a)
Sodjan Koné, F. Cayrel, Arnaud Yvon, Emmanuel Collard, Daniel Alquier,
Efficient edge terminations are fundamental for power electronic devices. High resistive edge termination technique obtained by ion implantation is a possible solution for GaN Schottky barrier diodes (SBD), but may induce defects detrimental to the devices. In this work, two sets of GaN SBDs, with or without a high resistive guard ring edge termination, were investigated by deep levels transient spectroscopy (DLTS). The corresponding DLTS spectra of devices with guard ring were compared to those of ...
Tópico(s): Semiconductor materials and interfaces
2016 - Wiley | physica status solidi (a)
C Lejeune, J.P. Grandchamp, Jean-Paul Gilles, Emmanuel Collard, P. Scheiblin,
from teaching and research institutions in France or abroad, or from public or private research centers.L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.Reactive ion beam etching of silicon with a new plasma ion source operated with CF4 : SiO2 over Si selectivity and Si surface modification
Tópico(s): Diamond and Carbon-based Materials Research
1989 - EDP Sciences | Revue de Physique Appliquée
Xi Song, Anne Elisabeth Bazin, Jean-François Michaud, F. Cayrel, Marcin Zieliński, Marc Portail, Thierry Chassagne, Emmanuel Collard, Daniel Alquier,
Two electrical characterization methods were used to study 3C-SiC epilayers doped by nitrogen implantation: circular Transfer Length Method (cTLM) which allows extracting the specific contact resistance and Scanning Spreading Resistance Microscopy (SSRM) used to measure activated doping concentration. 3C-SiC samples were implanted at room temperature with different energies (ranging from 30 to 150keV) and doses (from 1 to 5.4x1015cm-2) in order to obtain a 300nm thick box-like profile at 5x1020cm-3. ...
Tópico(s): Semiconductor materials and interfaces
2011 - Trans Tech Publications | Materials science forum
C. Hober, Lisa Fredeau, Anne Pham‐Ledard, Marouane Boubaya, F. Herms, P. Célérier, F. Aubin, N. Bénéton, Monica Dinulescu, A. Jannic, Nicolás Meyer, Anne-Bénédicte Duval-Modeste, Laure Césaire, Ève-Marie Neidhardt, E. Archier, Brigitte Dréno, C. Lesage, C. Berthin, N. Kramkimel, Florent Grange, Julie De Quatrebarbes, Pierre‐Emmanuel Stoebner, Nicolas Poulalhon, Jean‐Philippe Arnault, Safia Abed, B. Bonniaud, Sophie Darras, Valentine Heidelberger, S. Devaux, M. Moncourier, L. Misery, S. Mansard, M. Étienne, F. Brunet‐Possenti, C. Jacobzone, Romain Lesbazeilles, F. Skowron, J. Sanchez, Stéphanie Catala, M. Samimi, Youssef Tazi, Dominique Spaëth, C. Gaudy‐Marqueste, Olivier Collard, Raoul Triller, Marc Pracht, Marc‐Emmanuel Dumas, L. Peuvrel, Pierre Combe, O. Lauche, Pierre Guillet, Yves Réguerre, I. Kupfer‐Bessaguet, D. Solub, A. Schoeffler, Christophe Bédane, G. Quéreux, S. Dalac, Laurent Mortier, E. Maubec,
Although cemiplimab has been approved for locally advanced (la) and metastatic (m) cutaneous squamous-cell carcinomas (CSCCs), its real-life value has not yet been demonstrated. An early-access program enrolled patients with la/mCSCCs to receive cemiplimab. Endpoints were best overall response rate (BOR), progression-free survival (PFS), overall survival (OS), duration of response (DOR) and safety. The 245 patients (mean age 77 years, 73% male, 49% prior systemic treatment, 24% immunocompromised, 27% Eastern ...
Tópico(s): Cutaneous lymphoproliferative disorders research
2021 - Multidisciplinary Digital Publishing Institute | Cancers
Antoîne Italiano, Olivier Mir, Angela Cioffi, Emanuela Palmerini, Sophie Piperno‐Neumann, Christophe Perrin, L. Chaigneau, Nicolas Penel, Florence Duffaud, Jean‐Emmanuel Kurtz, Olivier Collard, François Bertucci, Emmanuelle Bompas, Axel Le Cesne, Robert G. Maki, Isabelle Ray Coquard, Jean‐Yves Blay,
BackgroundThere are limited data about the role of chemotherapy in patients withadvanced chondrosarcomas.MethodsThe medical charts of 180 patients with advanced chondrosarcomas having received chemotherapy in 15 participating institutions between 1988 and 2011 were reviewed.ResultsMedian age was 52 years. Sixty-three percent of patients had conventional chondrosarcoma and 88% had metastatic disease. Combination chemotherapy was delivered in 98 cases (54.5%). One hundred and thirty-one patients (73%) ...
Tópico(s): Musculoskeletal synovial abnormalities and treatments
2013 - Elsevier BV | Annals of Oncology
Nicolas Thierry‐Jebali, Olivier Ménard, Rodica Chiriac, Emmanuel Collard, Christian Brylinski, F. Cayrel, Daniel Alquier,
Abstract This work reports on Differential Scanning Calorimetry (DSC) measurements performed on Ti‐Al metallic layers stacks deposited on n + ‐GaN. The aim is to get better understanding of the mechanisms leading to ohmic contact formation during the annealing stage. Two exothermic peaks were found, one below 500 °C and the other one around 660 °C. They can be respectively attributed to Al 3 Ti and Al 2 Ti compounds formation. The locations of these peaks provide clear evidence of solid‐solid reactions. ...
Tópico(s): Metal and Thin Film Mechanics
2010 - Wiley | Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
Daniel Alquier, F. Cayrel, Olivier Ménard, Anne-Elisabeth Bazin, Arnaud Yvon, Emmanuel Collard,
In this work, both "Schottky to Schottky" structure (STS) and pseudo-vertical Schottky barrier diode (pv-SBD) have been processed on GaN heteroepitaxially grown on sapphire or silicon by metal organic chemical vapor deposition (MOCVD) and characterized physically and electrically. Ni and Ti/Al were used to obtain respectively Schottky and Ohmic contacts using rapid thermal annealing (RTA). Adequate passivation steps and insertion of a resistive guard ring were also implemented in pv-SBD. The STS results, ...
Tópico(s): Semiconductor materials and devices
2012 - Institute of Physics | Japanese Journal of Applied Physics
J. Biscarrat, Jean-François Michaud, Emmanuel Collard, Daniel Alquier,
Due to its inert chemical nature, plasma etching is the most effective technique to pattern SiC. In this paper, dry etching of 4H-SiC substrate in Inductively Coupled Plasma (ICP) has been studied in order to evaluate the impact of process parameters on the characteristics of etching such as etch rate and trenching effect. Key process parameters such as platen power and ICP coil power prove to be essential to control the SiC etch rate. On the other hand, the ICP coil power and the working pressure ...
Tópico(s): Copper Interconnects and Reliability
2013 - Trans Tech Publications | Materials science forum
Wahid Khalfaoui, Thomas Oheix, Georgio El-Zammar, Roland Benoit, F. Cayrel, E. Faulques, Florian Massuyeau, Arnaud Yvon, Emmanuel Collard, Daniel Alquier,
Local p-type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi-energy implantations were performed to achieve a "box-like" profile. SIMS measurements showed unexpected deep Mg profile due to defect-assisted channeling in the GaN. In addition, a high-density defect region induced by the implantation was evidenced by TEM characterization. To protect the GaN surface prior to high temperature ...
Tópico(s): Metal and Thin Film Mechanics
2016 - Wiley | physica status solidi (a)
Wahid Khalfaoui, Thomas Oheix, F. Cayrel, Roland Benoit, Arnaud Yvon, Emmanuel Collard, Daniel Alquier,
Gallium nitride (GaN) is generally considered a good candidate for power electronic devices such as Schottky barrier diodes (SBDs). Nevertheless, GaN has a strong sensitivity to high temperature treatments and a cap-layer is mandatory to protect the material surface during annealing at high temperature such as post-implantation treatments. In this work, an oxidized gallium nitride layer (GaOxNy) was generated with Oxford PECVD equipment using a N2O plasma treatment to protect the GaN surface during ...
Tópico(s): ZnO doping and properties
2016 - IOP Publishing | Semiconductor Science and Technology
B. Baccus, Emmanuel Dubois, Dominique Collard, Denis Morel,
Abstract In order to study advanced bipolar transistors including several polysilicon layers and U-groove isolation, a dedicated two-dimensional multilayer process simulator, IMPACT4, has been developed. From the simulation point of view, the new aspects introduced by these devices, namely the multilayer and non planar characteristics, are carefully taken into account by the program. Especially, the algorithmic procedure solving the dopant redistribution at interfaces is discussed. The application ...
Tópico(s): Semiconductor materials and devices
1989 - Elsevier BV | Solid-State Electronics