Project Gutenberg
This Is the Front Side of Yomeimon Gate. The Symbol of Nikko Toshogu, This Gate Displays a Collection of the Craftsmanship and Decorative Techniques Representative of the Beginning of the Edo ...
0000 - Gale Group | NCCO Photography
John Alexander Fraser Roberts,
Reginald Ruggles Gates died in London on 12 August 1962, at the age of eighty. He was a remarkable figure, alike ... sister being the eldest children of Andreas Bohaker Gates and Charlotte Elizabeth Ruggles. On his father’s ... was a great-great-grandson of Captain Oldham Gates, who was born at Cambridge, Massachusetts, in 1716 and migrated to Nova Scotia about 1760. Captain Gates was a half-brother of General Horatio Gates, the well-known leader during the American Revolution, ... the surrender of General Burgoyne at Saratoga. The Gates family in America was descended from Stephen Gates, ...
Tópico(s): Plant Diversity and Evolution
1964 - Royal Society | Biographical Memoirs of Fellows of the Royal Society
IEEE Xplore
The Yasha Gate of the Daiyuin Enshrining the Tomb of Shogun Tokugawa Iemitsu Is Located in Front of the Kara Gate, Which Is the Entrance to the Main Temple. ...
0000 - Gale Group | NCCO Photography
J. C. Sarace, Richard Kerwin, D. L. Klein, Ryan C. Edwards,
Silicon insulated-gate field-effect transistors (FETs) have been fabricated by processes involving relatively non-critical photoresist and self-limiting etching ... of the method include the formation of the gate insulator under extremely clean conditions, incorporation of an ... stable device characteristics and automatic alignment of the gate electrode with respect to source and drain. The gate insulator, comprising 600 Å of grown silicon dioxide ... and silicon nitride to ensure a well-controlled gate insulator thickness. Thus the nitride layer serves the ...
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
1968 - Elsevier BV | Solid-State Electronics
IEEE Xplore
This Is Sangedatsu Gate (Sanmon), the Middle Gate in the Temple Precincts. The Name (Lit. "Three Liberations") Is Said to Refer to the Buddhist Concept of Release from the Three Poisons ( ...
0000 - Gale Group | NCCO Photography
Federico Faggin, Thomas Klein, L. Vadasz,
The Silicon Gate Technology is a new approach to fabricating insulated gate field effect transistor circuits, in which the metal gate electrode is replaced by a doped, silicon electrode. The work function difference between the gate electrode and semiconductor bulk will now be determined by the doping of the gate electrode. This leads to normally off p-channel ... and 2.5 v on material with 1000A gate oxide. It is a self-aligned gate structure and has a buried-gate electrode which allows crossover of gate regions and ...
Tópico(s): Silicon and Solar Cell Technologies
1969 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
Springer Link
The Karamon Gate of Nishihonganji Temple Is Seen from the Southeast, Facing Northeast. The Four-Legged Gate Facing Kitakoji Street Is Said to Have Been ...
0000 - Gale Group | NCCO Photography
Gate shorts caused by electrical breakdown of the gate dielectric are a major yield and reliability problem ... 40 V can be used to protect the gate from high voltage transients or static discharges. This paper provides a uniform approach to gate protection. It is shown theoretically that in order to obtain effective gate protection: the protecting device should have a low ... should be above, but close to, the maximum gate operating voltage; and protection by a diffused resistor in series with the gate is much more effective than by a diode ...
Tópico(s): Semiconductor materials and devices
1971 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
... the Head Temple of the Jodo Sect. The Gate Is the Largest Cherry Gate Made by Tokugawa Hidetada. The Construction Was Initiated ... Later. The Photo Looks up at the Overall Gate. The Plaque with the Characters "Kachozan" on the ...
0000 - Gale Group | NCCO Photography
A threshold gate has binary inputs and outputs just like any other logic gate. The difference, however, is that in the threshold gate the inputs may be weighted and, eventually, a ... all inputs as high (as in an AND gate) or one input high (as in an OR gate) is the reason that a threshold gate can tell more about the state of the ... circuit approach for building arrays of versatile threshold gates. In addition, some logic designs are described and ...
Tópico(s): Quantum Computing Algorithms and Architecture
1971 - Institute of Electrical and Electronics Engineers | IEEE Spectrum
... in the Right Foreground. The First Bronze Torii Gate in Japan, It Was Built by Third Shogun ... Hanging Lanterns Are Stored, Is Visible through the Gate. At the Top of the Stairs Stands Yomei ...
0000 - Gale Group | NCCO Photography
D.M. Erb, H.G. Dill, T.N. Toombs,
... structure is given for the n-channel stacked gate MOS tetrode which consists of a polycrystalline silicon buried control gate and thermally grown oxide for the offset gate insulator. As a result of the large band-bending in the offset gate depletion region of an operating tetrode, some drain ... is relatively small in the thermal-oxide offset gate insulator, it was possible to measure gate currents of up to 2 \times 10^{-4} A/cm 2 . The gate current was measured as a function of the drain current, the drain voltage and the offset gate voltage. The resulting behavior confirms previous models of ...
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
1971 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
This Is Sangedatsu Gate (Sanmon), the Middle Gate in the Temple Precincts. The Name (Lit. "Three Liberations") Is Said to Refer to the Buddhist Concept of Release from the Three Poisons ( ...
0000 - Gale Group | NCCO Photography
H. Morkoç, S. Bandy, R. Mohan Sankaran, G. A. Antypas, R. L. Bell,
... on Al 0.5 Ga 0.5 As gate heterojunction GaAs field-effect transistors (HJFET) with submicrometer gate lengths are reported. The structure of both types ... doped Al 0.5 Ga 0.5 As gate layer and a p + -type 5 × 10 18 - ... and cap" layer on the top of the gate. The gate structure is obtained by selectively etching the p + - ... Ga 0.5 As layer results in submicrometer gate lengths, and the resulting p + -GaAs overhang is ... source and the drain with respect to the gate. Normally off GaAs FET's with 0.5- to 0.7-µm long heterojunction gates exhibit maximum available power gains (MAG) of about ...
Tópico(s): GaN-based semiconductor devices and materials
1978 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
Yomei Gate Is Seen through Karagane Torii Gate from around Omizuya at Toshogu. The First Bronze Gate Built in Japan, Karagane Torii Was Built by the Third Shogun Tokugawa Iemitsu. The ...
0000 - Gale Group | NCCO Photography
Ryuji Kondo, Eiji Takeda, Tomoaki Hagiwara, M. Horiuchi, Yokichi Itoh,
The existence of a poly-Si control gate in an n-channel FAMOS makes the erase characteristics due to ultraviolet light (UVL) illumination different from those of conventional p-channel FAMOS's without control gates. The difference in erasing times between these two ... by the attenuation of UVL in the control gate. However, it was clarified experimentally and analytically in ... in an optical guide formed between the control gate and substrate and is then absorbed by the floating poly-Si gate. The absorbed UVL intensity in the floating gate ...
Tópico(s): Advanced Memory and Neural Computing
1978 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
... Myanmar), taken from the top of the South Gate by Willoughby Wallace Hooper in 1886. The photograph ... gates, three on each side, with the main gate in the centre of the east side. Hooper ...
0000 - Gale Group | NCCO Photography
Kensaku IMAICHI, Noriaki Ishii,
Many Tainter-gates are being used with increased frequencies also in Japan, in order to control the water level of reservoirs. In this type of gate system, the effect of mechanical frictions is much less than in the type of vertical-lift gates, therefore providing a small hoisting load and a smooth operation of the gate. Though Tainter-gates have such great advantages, these facilities of the mechanism yield a fear that Tainter-gates may oscillate owing to some fluid-induced structural load, i.e. the operation of Tainter-gates may tend to become unstable. In this study, ...
Tópico(s): Energy, Environment, Agriculture Analysis
1977 - Japan Society Mechanical Engineers | Bulletin of JSME
ASTM International
The Kara Gate Stands at the Front When Going through the Yomei Gate of Toshogu. It Looks Simple with Just White ... near the Ceiling, and the Pillars of the Gate Are Covered with Elaborate Carvings of Dragons Going ...
0000 - Gale Group | NCCO Photography
S.I. Long, F.S. Lee, R. Zucca, B.M. Welch, R.C. Eden,
... high-density (10/sup -3/ mm/sup 2//gate) GaAs IC technology has been used for fabricating MSI digital circuits containing up to 75 gates/chip. These digital circuits have potential application for ... circuits consist of Schottky diode FET logic NOR gates, which have provided propagation delays in the 75- ... dynamic switching energies as low as 27 fJ/gate on ring oscillator structures. Power dissipation levels are ... circuits. Finally, a 3x3 parallel multiplier containing 75 gates functioned with a propagation delay of 172 ps/ ...
Tópico(s): Semiconductor Quantum Structures and Devices
1980 - IEEE Microwave Theory and Techniques Society | IEEE Transactions on Microwave Theory and Techniques