Daniel J. Solis, Elena Navarrete-Astorga, J. L. Costa‐Krämer, J. Salguero-Fernandez, Ricardo Schrebler, D. Leinen, Enrique A. Dalchiele, J.R. Ramos-Barrado, F. Martı́n,
... thin films of gallium-doped indium zinc oxide (GIZO) with a 2% ratio of Ga/Zn, were ... composition, optical, electrical, and structural properties of the GIZO films. The optical constants and the electrical properties were obtained using optical models. The GIZO stoichiometry, and therefore the In/Zn atomic ratio, ... band gap, and charge carrier mobility of the GIZO films. The charge carrier density was related to ... 103 Ω−1 cm−1) were obtained for GIZO films with In/Zn ratio ≥ 1. Several figures ... range of 0.85–0.90 for the GIZO films.
Tópico(s): Transition Metal Oxide Nanomaterials
2018 - Elsevier BV | Ceramics International
C. Oengpepa, Ian Hawes, I. Lane, Kim Friedman, Johann D. Bell,
... over an eight-year period at two sites, Gizo and Noro, in the Western Province of Solomon ... was similar, with summer maximum of 4.9 (Gizo) and 4.7 collector−1 (Noro). At both ... of highest recruitment. Maximum settlement of spat at Gizo was 10.2 collector−1 in January 2002, ... did not vary over time, but spat at Gizo were significantly smaller (geometric mean 7.6 mm) ... significantly more gastropod predators at Noro than at Gizo. Gizo and Noro in the Western Province of Solomon ...
Tópico(s): Isotope Analysis in Ecology
2006 - National Shellfisheries Association | Journal of Shellfish Research
... degradation and recovery of gallium indium zinc oxide (GIZO) thin-film transistors (TFTs) with etch-back (EB) structures during the fabrication process. EB GIZO TFTs were degraded by a source/drain dry ... a wet etch of the backside of the GIZO recovered the performance of the GIZO TFTs. EB GIZO TFTs with a field-effect mobility of 14. ...
Tópico(s): Silicon and Solar Cell Technologies
2012 - Elsevier BV | Displays
Yus Rama Denny, Hye Chung Shin, Soonjoo Seo, Suhk Kun Oh, Hee Jae Kang, Dahlang Tahir, Sung Heo, Jae Gwan Chung, Jae Cheol Lee, S. Tougaard,
The electronic and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass substrates were investigated using X-ray photoelectron spectroscopy (XPS) and reflection electron energy loss spectroscopy (REELS). XPS results show that HIZO, GIZO, and IZO thin films have mixed metal and ... REELS spectra reveal that the band gaps of GIZO, HIZO, and IZO thin films are 3.1 ... k, and the transmission coefficient T of the GIZO, HIZO and IZO thin films were determined from ... into IZO, but decreased by 3% for the GIZO compound incorporating Ga into IZO in the visible ...
Tópico(s): ZnO doping and properties
2011 - Elsevier BV | Journal of Electron Spectroscopy and Related Phenomena
Dahlang Tahir, Eun Kyoung Lee, Hyuk Lan Kwon, Suhk Kun Oh, Hee Jae Kang, Sung Heo, Eun Ha Lee, Jae Gwan Chung, Jae Cheol Lee, S. Tougaard,
Abstract The electronic and optical properties of GaInZnO (GIZO) thin films grown on SiO 2 /Si by ... extinction coefficient k and transmission coefficient T of GIZO thin films were obtained from a quantitative analysis ... the concentration ratios of Ga:In:Zn in GIZO thin films are 1:1:1, 2:2: ... visible region improved with increasing Ga concentration in GIZO. Copyright © 2010 John Wiley & Sons, Ltd.
Tópico(s): Semiconductor materials and devices
2010 - Wiley | Surface and Interface Analysis
Kyoung‐Seok Son, Tae‐Sang Kim, Jongwan Jung, Myungkwan Ryu, Kyung‐Bae Park, Byungwook Yoo, Jungwoo Kim, Young‐Gu Lee, Jang‐Yeon Kwon, Sangyoon Lee, Jongmin Kim,
Abstract We successfully fabricated GIZO (Ga 2 O 3 ‐In 2 O 3 ‐ZnO) TFTs with high mobility of 2.6 cm 2 /Vs and ... the post process after the back surface of GIZO is exposed and suggest the effective method for controlling the threshold voltage of amorphous GIZO TFTs. Finally we demonstrate 4 inch QVGA AMOLED display driven by GIZO TFTs.
Tópico(s): Transition Metal Oxide Nanomaterials
2008 - Wiley | SID Symposium Digest of Technical Papers
Srinivasan Mukundan, Kay H. Vydareny, David Vassallo, Simon Irving, Divi Ogaoga,
... Methods A trial telemedicine system was established between Gizo Hospital (Gizo, Solomon Islands) and Emory University Hospital (Atlanta, Ga). At Gizo Hospital, the system consisted of a commercially available ... Internet access. A visiting British medical student at Gizo Hospital used this equipment to relay digital photographs ... student's return home, his local preceptors at Gizo Hospital and a physician at Helena Goldie Hospital ...
Tópico(s): Telemedicine and Telehealth Implementation
2003 - Elsevier BV | Academic Radiology
Jae Chul Park, Seung‐Eon Ahn, Ho‐Nyeon Lee,
... low-cost amorphous gallium–indium–zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for ... device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/ ... This work has revealed the dependence of a-GIZO TFT characteristics on the N2O plasma radio-frequency ( ... basis of these results, a high-performance a-GIZO TFT with a field-effect mobility of 35. ...
Tópico(s): Semiconductor materials and devices
2013 - American Chemical Society | ACS Applied Materials & Interfaces
... and a 60-nm gallium-indium-zinc-oxide (GIZO) layer. The μ FE is about 2.3 times higher than that of a GIZO TFT, and the V TH is almost same as that of a GIZO TFT. The stability of this TFT with a ... active layer was superior to that of a GIZO TFT.
Tópico(s): Transition Metal Oxide Nanomaterials
2012 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Antonis Olziersky, Pedro Barquinha, Anna Vilà, Carlos Magaña, Elvira Fortunato, J.R. Morante, Rodrigo Martins,
... to determine the role of Ga2O3–In2O3–ZnO (GIZO) channel layer composition on the electrical performance and stability exhibited by thin-film transistors (TFTs). The GIZO films were obtained by magnetron sputtering using ceramic ... analysis corroborates the fully amorphous character of the GIZO deposited layers. For the target compositional range used ... s−1, respectively. In addition, the In-richer GIZO compositions result in considerably more stable TFTs, especially ...
Tópico(s): Ga2O3 and related materials
2011 - Elsevier BV | Materials Chemistry and Physics
Pedro Barquinha, L. Pereira, Gonçalo Gonçalves, Rodrigo Martins, Elvira Fortunato,
... of processing parameters on the electrical performance of GIZO films and thin-film transistors (TFTs). Parameters such ... devices. Nevertheless, it is demonstrated that reducing the GIZO thickness from greatly enhances the switching behavior of ... be crucial to control device performance, significantly modifying GIZO electrical resistivity and promoting local atomic rearrangement, being ...
Tópico(s): Semiconductor materials and devices
2009 - Institute of Physics | Journal of The Electrochemical Society
Jaechul Park, Ihun Song, Sunil Kim, Sang‐Wook Kim, Changjung Kim, Jae-Cheol Lee, Hyung-Ik Lee, Eunha Lee, Huaxiang Yin, Kyoung-Kok Kim, Kee-Won Kwon, Youngsoo Park,
... gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of ... on the source/drain region of the a-GIZO active layer to reduce the series resistance. After ... In-rich and In-deficient regions. The a-GIZO TFT also had a constant sheet resistance of ... Mo metal and the Ar plasma-treated a-GIZO indicated a good Ohmic contact and a contact ...
Tópico(s): Transition Metal Oxide Nanomaterials
2008 - American Institute of Physics | Applied Physics Letters
Jaechul Park, Sang‐Wook Kim, Changjung Kim, Sunil Kim, Ihun Song, Huaxiang Yin, Kyoung-Kok Kim, Sunghoon Lee, Ki‐Ha Hong, Jae-Cheol Lee, Jaekwan Jung, Eunha Lee, Kee-Won Kwon, Youngsoo Park,
Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the ... applied to the back surface of the a-GIZO channel layer before a-SiO2 deposition. N2O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect ...
Tópico(s): Electrical and Thermal Properties of Materials
2008 - American Institute of Physics | Applied Physics Letters
Jisim Jung, Kyoung‐Seok Son, Tae-Sang Kim, Myungkwan Ryu, Kyung‐Bae Park, Byungwook Yoo, Jang‐Yeon Kwon, Sangyoon Lee, Jongmin Kim,
... annealing on the stability of Ga2O3-In2O3-ZnO (GIZO) thin film transistors (TFT) were investigated by comparing the GIZO TFTs annealed for 3 hour and for 65 ... We found that the poor stability of the GIZO TFTs under these stresses was remarkably improved after ... the reduction of the trap sites in the GIZO layer and curing of weak atomic bonds otherwise ...
Tópico(s): ZnO doping and properties
2008 - Institute of Physics | ECS Transactions
Kyoung-Seok Son, Tae-Sang Kim, Ji-Sim Jung, Myung-Kwan Ryu, Kyung‐Bae Park, Byung-Wook Yoo, KeeChan Park, Jang‐Yeon Kwon, Sangyoon Lee, Jong‐Min Kim,
... plasma treatments on the back-channel of amorphous (GIZO) thin film transistors (TFTs) are compared for and ... oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage ... reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the ...
Tópico(s): Silicon and Solar Cell Technologies
2008 - Electrochemical Society | Electrochemical and Solid-State Letters
Hyuck Lim, Huaxiang Yin, Jin‐Seong Park, Ihun Song, Changjung Kim, JaeChul Park, Sunil Kim, Sang‐Wook Kim, Chang Bum Lee, Yong C. Kim, Young Soo Park, Donghun Kang,
We fabricated gallium-indium-zinc oxide (GIZO) thin film transistors (TFTs) having a double-gated (DG) structure and studied the back gate effect on device performance. DG GIZO TFTs showed better threshold voltage (Vth), swing factor ( ... to the modification of field distribution near the GIZO channel. It is believed that our DG structure ... an effective way to improve the performance of GIZO oxide transistors and suppress the formation of an ...
Tópico(s): Semiconductor materials and devices
2008 - American Institute of Physics | Applied Physics Letters
Jang Yeon Kwon, Kyoung Seok Son, Ji Sim Jung, Tae Sang Kim, Myung Kwan Ryu, Kyung‐Bae Park, Byung Wook Yoo, Jung Ho Kim, Young Gu Lee, KeeChan Park, Sangyoon Lee, Jong Min Kim,
... 2 O 3 -In 2 O 3 -ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. ... show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls ... effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are ... organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel ...
Tópico(s): Semiconductor materials and devices
2008 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Dahlang Tahir, Sri Dewi Astuty Ilyas, Hee Jae Kang,
Amorphous GaInZnO (GIZO) thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By the combination of ... we have demonstrated the energy band alignment of GIZO thin films. The band gap values are 3. ... the concentration ratios of Ga: In: Zn in GIZO thin films are 1:1:1, 2:2: ... 68 eV with increasing amount of Ga in GIZO thin films for GIZO1 to GIZO4, respectively. These ... the further understanding in the fundamental properties of GIZO/SiO2/Si heterostructure, which will be useful in ...
Tópico(s): GaN-based semiconductor devices and materials
2012 - University of Indonesia | MAKARA of Science Series
Chien‐Yie Tsay, I-Ping Hsiao, Fong-Yi Chang, Cheng‐Liang Hsu,
... ZnO (IZO), and Ga–In co-doped ZnO (GIZO) nanowire arrays were grown on a template of ... and under UV illumination. Under UV illumination, the GIZO device had the best photosensing characteristics of all ... 1.8 V. The presented p-GaN/n-GIZO heterojunction UV photodetector realized superior photoresponse performance at ...
Tópico(s): GaN-based semiconductor devices and materials
2020 - Elsevier BV | Materials Science in Semiconductor Processing
Oana Moldovan, A. Castro-Carranza, A. Cerdeira, M. Estrada, Pedro Barquinha, Rodrigo Martins, Elvira Fortunato, Slobodan Miljakovic, Benjamı́n Iñiguez,
... model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output ... Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We ... the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the ...
Tópico(s): CCD and CMOS Imaging Sensors
2016 - Elsevier BV | Solid-State Electronics
Pydi Ganga Bahubalindruni, Bruno Silva, Vítor Grade Tavares, Pedro Barquinha, Nuno Cardoso, Pedro Oliveira, Rodrigo Martins, Elvira Fortunato,
... gallium-indium-zinc-oxide thin-film transistors (a-GIZO TFTs), were designed, simulated, fabricated, and characterized. Circuit ... far for a single-stage amplifier with a-GIZO TFT technology.
Tópico(s): Advanced Memory and Neural Computing
2014 - Institute of Electrical and Electronics Engineers | Journal of Display Technology
Pulak Chandra Debnath, Sang Yeol Lee,
... transistor with amorphous Ga-In-Zn-O (a-GIZO) and depletion mode load with amorphous Si-In- ... negative value while the threshold voltage of the GIZO driving TFT exhibits positive value. The proposed inverter composed of a-SIZO and a-GIZO TFT shows much improved switching characteristics with higher ...
Tópico(s): Transition Metal Oxide Nanomaterials
2012 - American Institute of Physics | Applied Physics Letters
... hydrothermal synthesis. Gallium with indium co-doped ZnO (GIZO) films displayed a dramatic improvement in surface morphology ... oxide conducting films currently used commercially. Finally, the GIZO film was hydrothermally grown on a p-GaN ... light emission which signified the prospect of using GIZO as an effective and low-cost n-type ...
Tópico(s): Gas Sensing Nanomaterials and Sensors
2011 - Institute of Physics | Journal of Physics D Applied Physics
Saraswathi Chirakkara, S. B. Krupanidhi,
Abstract Ga and In co‐doped ZnO (GIZO) thin films together with ZnO, In‐doped ZnO (IZO), Ga‐doped ZnO (GZO), and IZO/GZO multilayer for comparison, were grown on corning ... Si substrates by PLD. The photoluminescence spectra of GIZO showed a strong white light emission and the ... and larger forward current. The CIE coordinates for GIZO were observed to be (0.31, 0.33) ...
Tópico(s): Thin-Film Transistor Technologies
2011 - Wiley | physica status solidi (RRL) - Rapid Research Letters
Guanghai Jin, Jonghyun Choi, Wonpil Lee, Yeon‐Gon Mo, Hye‐Dong Kim, Sangsoo Kim, Moojin Kim, J. H. Song,
... n-type amorphous Ga–In–Zn–O (a-GIZO) TFT. The device was fabricated step by step, ... process to the fabrication of the upper a-GIZO TFT via a low-temperature process; this was ... structure that allows successive formation of the a-GIZO TFT on the poly-Si TFT. The transfer ...
Tópico(s): Semiconductor materials and devices
2011 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Hyunsoo Kim, Kyoung‐Kook Kim, Sung‐Nam Lee, Jae‐Hyun Ryou, Russell D. Dupuis,
... contacts to amorphous gallium indium zinc oxides (a-GIZO). The specific contact resistances obtained using the transmission ... the combined effects of structural relaxation of a-GIZO films at elevated temperatures, causing drastic increases in ... to interfacial reactions between Ti/Au and a-GIZO layers producing oxygen vacancies near the surface.
Tópico(s): ZnO doping and properties
2011 - American Institute of Physics | Applied Physics Letters
Pedro Barquinha, L. Pereira, Gonçalo Gonçalves, Rodrigo Martins, Elvira Fortunato, Danjela Kuščer, Marija Kosec, Anna Vilà, Antonis Olziersky, J.R. Morante,
... surface. The integration of the multicomponent dielectrics in GIZO TFTs allows remarkable performance, comparable with that of GIZO TFTs using SiO 2 deposited at 400°C ...
Tópico(s): ZnO doping and properties
2010 - Wiley | Journal of the Society for Information Display
Dongjo Kim, Youngmin Jeong, Chang Young Koo, Keunkyu Song, Jooho Moon,
... the thickness of printed Ga–In–Zn-O (GIZO) channel on transistor performance. Semiconductor layers were ink-jet printed using sol–gel derived GIZO solution and the thickness of the resulting active ... the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film ...
Tópico(s): ZnO doping and properties
2010 - Institute of Physics | Japanese Journal of Applied Physics
Sun Il Kim, Jin‐Seong Park, Chang Jung Kim, Jae Chul Park, Ihun Song, Young Soo Park,
... bottom gate amorphous gallium indium zinc oxide (a-GIZO) thin-film transistors (TFTs) have been fabricated by ... Top and bottom layers were CuGaInZnO (CGIZO) and GIZO, respectively. When the plasma-enhanced processes were introduced ... fabrication of the TFTs, the TFT with a-GIZO single active layer did not exhibit electrically reliable ...
Tópico(s): Electrical and Thermal Properties of Materials
2009 - Institute of Physics | Journal of The Electrochemical Society
Shankar Aswani, Armagan Sabetian,
... and artisanal fishing pressure on parrotfish fisheries in Gizo Town, Western Solomon Islands, by analyzing the density ... 2 years. We then compared parrotfish data from Gizo Town with equivalent data from sites open to ... in parrotfish abundance from 2004 to 2005 in Gizo was roughly the same magnitude as the difference ...
Tópico(s): Marine and fisheries research
2009 - Wiley | Conservation Biology