E. Santini De Riols, G. Rouy, Dr. F. X. Gillot, Paul Groult,
... Congrès International De Zoologie, La Tour Penchée De Laon Glissement Sur Une Formation Argileuse, La Destruction Des ...
1898 - Gale Group | NCCO-STM 1of2
Han‐Han Lu, Lu Liu, J.P. Xu, P. T. Lai, Wing Man Tang,
... capacitors are fabricated by alternately depositing La oxynitride (LaON)/TiON or TiON/LaON or first depositing a LaON interlayer and then alternately depositing LaON/TiON, and their interfacial and electrical properties are ... compared. Experimental results show that the sample with LaON interlayer exhibits better interface quality and electrical performance ... involved mechanism lies in the fact that the LaON interlayer on the GaAs surface can effectively reduce ...
Tópico(s): Advanced Memory and Neural Computing
2017 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
Errata: at end Book.
1772 - Gale Group | NCCO Corvey
Xubing Lu, Zhiguo Liu, Yiping Wang, Ying Yang, Xiao-Ping Wang, Hongwei Zhou, Bich-Yen Nguyen,
Amorphous LaAlO3 (LAO) and LAOxNy (LAON) films have been prepared by pulsed laser deposition technique on Si (100) substrates and Pt coated silicon substrates. X-ray diffraction, ... of 0.14 nm for 8 nm LAO. LAON films have a smoother surface than that of ... exists interfacial reaction between LAO and Si. One LAON/Si structure nearly without interfacial layer has been ... constant of 25–27 have been obtained. The LAON films showed small equivalent oxide thickness of 1. ... Vg=+1 V. It is proposed that amorphous LAON films are very promising dielectric materials for high ...
Tópico(s): Diamond and Carbon-based Materials Research
2003 - American Institute of Physics | Journal of Applied Physics
HON. SEC. OF LOCAL PIG CLUB., GEORGE LAMBERT., ARTHUR CONAN DOYLE., R. MUIRHEAD COLLINS., FRANCIS R. C. PAYNE., JAMES FORSYTH., VALENTINE CHIROL., Our Belfast Correspondent telegraphs:-, WRENBURY., ELLIS HUME-WILLIAMS., G. W. PROTHERO., HENRY MORRIS., SPENCER WILKINSON., X., DENBIGH., W. W. TARN., MONS., A. H. HASTIE., H. M. CLEMINSON., From Our Parliamentary Correspondent., RALPH BANKES.,
... Special Training For Present War Conditions., French In Laon. Clearing St. Gobain Massif. Capture Of Aisne Salient., ... Tobaccos., A General Retreat. St. Gobain Forest Evacuated. Laon And LA Fere Taken. British Before Douai. German ...
1918 - Gale Group | TDA
Shintaroh Sato, K. Tachi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takanori Hattori, Hiroshi Iwai,
... in La2O3. The EOT increase on the TaN/LaON and W/LaON structure is reduced compared with that on the ... La2O3 structure. This is due to nitrogen in LaON and SiNx-rich interfacial layer which seems to remain after high temperature annealing. W/LaON nMOSFET is also successfully fabricated. Peak electron mobility ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2007 - Elsevier BV | Microelectronic Engineering
M. Jean-Antoine Giobert, M. Couret, M. Cassan, M. Dizé, M. Darcet, M. Dotroné La Couture, P. Cotte, P. Cotte,
... Analyse Chimique, Extrait Des Obsevations Météorologiques Faites À Laon, Par Ordre Du Roi, Pendant Le Mois De ... Par Le …, Extrait Des Obsevations Météorologiques Faites À Laon, Par Ordre Du Roi, Pendant Le Mois De ...
1790 - Gale Group | NCCO-STM 1of2
Xiaodong Huang, P. T. Lai, J.K.O. Sin,
Charge-trapping characteristics of stacked LaTiON/LaON film were investigated based on Al/Al2O3/LaTiON-LaON/SiO2/Si (band-engineered MONOS) capacitors. The physical properties of the high-k ... the current-conduction mechanism. By adopting stacked LaTiON/LaON film instead of LaON film as charge-trapping layer, improved electrical properties ...
Tópico(s): Electronic and Structural Properties of Oxides
2012 - Springer Science+Business Media | Applied Physics A
M. Le Vavasseur, M. Widenmann, M. Schreiber, M. Vogler, M. Couret, C. G. De Razoumowsky, P. Cotte, P. Cotte, De M. Deluc, A M. Delamétherie, De M. L. Reynier, A J. C. Delamétherie, De M. Dodun, A J. C. Delamétherie, M. E. Reynier, M. De Ruprecht,
... Nouvelles Littéraires, Extrait Des Observations Météorologiques Faites À Laon, Par Ordre Du Roi, Pendant Le Mois D' ... En Suisse, Extrait Des Observations Météorologiques Faites À Laon, Par Ordre Du Roi, Pendant Le Mois De ...
1790 - Gale Group | NCCO-STM 1of2
Ya Gao, Yu Huang, Jianmei Chen, Yuhang Liu, Yurui Xu, Xinghai Ning,
... tandem catalytic system, termed as a luminescent "nanochip" (LAON), which was composed of gold nanoparticles (AuNPs) and ... C3N4), for chemiluminescent detection of sweat glucose. The LAON exhibits dual catalytic activity of glucose oxidase and ... sensitive detection of glucose. We identify that the LAON can precisely detect glucose with a detection limit ... glucose levels in different biological samples. Particularly, the LAON is capable of sensitively and accurately monitoring dynamic changes in sweat glucose during exercise. Therefore, the LAON provides an alternative approach to supersede invasive blood ...
Tópico(s): Biosensors and Analytical Detection
2021 - American Chemical Society | Analytical Chemistry
M. De S'aussure, P. Cotte, P. Cotte, M. Sage, M. Sage, M. Le Roy, M. Herschel, M. De Saussure,
... Proposées Par La Société Royale D'agriculture De Laon, Sur Les Effets …, Précis Extrait, Extrait Des Observations Météorologiques Faites À Laon, Par Ordre Du Roi, Pendant Le Mois De ...
1790 - Gale Group | NCCO-STM 1of2
N. Somolinos, R. Arranz, Mercedes Rey, M. L. Jiménez,
... Servicio de Microbiologia, Hospital de la PrincesaDiego de Laón 62, 28003 Madrid, Spain Search for other works ... Servicio de Microbiologia, Hospital de la PrincesaDiego de Laón 62, 28003 Madrid, Spain Search for other works ... Servicio de Microbiologia, Hospital de la PrincesaDiego de Laón 62, 28003 Madrid, Spain Search for other works ... Servicio de Microbiologia, Hospital de la PrincesaDiego de Laón 62, 28003 Madrid, Spain *Corresponding author Search for ...
Tópico(s): Antifungal resistance and susceptibility
1992 - Oxford University Press | Journal of Antimicrobial Chemotherapy
M. Passinge, M. Milner, M. Klaproth, M. Couret, M. Dutrône La Couture, E. G. Robert, M. Valmont De Bomare, P. Cotte, P. Cotte,
... Éléve En Pharmacie, Suite Des Observations Faites À Laon Sur La Boussole De Variations De M. Coulomb, ... Nouvelles Littéraires, Extrait Des Observations Météorologiques Faites À Laon, Par Ordré Du Roi, Pendant Le Mois De ...
1790 - Gale Group | NCCO-STM 1of2
H.X. Xu, J.P. Xu, C. X. Li, P. T. Lai,
... Ge metal-oxide-semiconductor (MOS) capacitors with HfO2/LaON or HfO2/La2O3 stacked gate dielectric (LaON or La2O3 as interlayer) are investigated. It is ... can be achieved for the MOS device with LaON interlayer. The involved mechanism lies in that the LaON interlayer can effectively block the interdiffusions of Ge, ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2010 - American Institute of Physics | Applied Physics Letters
BEDFORD ROW., HARRY E. BRITTAIN., ROWLAND ALSTON.:, NEW NUMBER OF "THE TIMES" WAR HISTORY., DUMA TO REASSEMBLE., KNUTSFORD., H. WILSON FOX, REGINALD CUSTANCE., JOHN LEYLAND., T. E. HOLLAND., A SUFFERER.,
... A Compromise In Russia., Horse Thieves' Trade., From Laon To The Aisne. Topography Of The Battleground. Frencn ...
1917 - Gale Group | TDA
Xinye Lu, Hui Lu, Zegong Chen, X. Zhang, Ru Huang, Huanping Zhou, X. P. Wang, Billy Nguyen, ChenXue Wang, Wang Xiang, Meng He, B. L. Cheng,
High permittivity LaAlO3 (LAO) and LaAlOxNy (LAON) thin films have been deposited directly on a Si(100) substrate using a laser molecular-beam epitaxy technique. Metal–oxide–silicon field- ... transistors (MOSFETs) are fabricated using such LAO and LAON thin films as gate dielectrics and well-behaved ... slope have been observed for devices with the LAON thin film. For all the devices, the gate ... dec were obtained for MOSFETs with LAO and LAON films, respectively.
Tópico(s): Diamond and Carbon-based Materials Research
2004 - American Institute of Physics | Applied Physics Letters
GERALD F. GATES., M.B., MAJOR GREENWOOD., J. REDMAN ORMEROD., JAMES H, BLACKWOOD, , T. L. PAPILLON, , D. MACKENZIE WALLACE., A correspondent, MANUFACTURER.,
... The Weather. Picture Gallery: Blücher's Retirement On Laon.. Index. Editorials/Leaders: India and the Commission's ...
1914 - Gale Group | TDA
Chao-Wen Liu, Jingping Xu, Lu Liu, Han‐Han Lu,
... HfTiON GaAs metal-oxide–semiconductor (MOS) capacitors with LaON as interfacial passivation layer (IPL) and NH3- or ... and compared with their counterparts that have neither LaON IPL nor surface treatment. It is found that ... device with a stacked gate dielectric of HfTiON/LaON. These improvements should be ascribed to the fact ... effectively remove defective Ga/As oxides. In addition, LaON IPL can further block oxygen atoms from being ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2015 - IOP Publishing | Chinese Physics B
Henri Boursault, Dr. C. Girard, P. Chrétien, G. Rouy, L. Cuénot, A. Goux, Dr. E. Trouessart, A. E. Malard, G. Malloizel,
... D'eau De La Craie Aux Environs De Laon, Diagnoses D'acariens Nouveaux, Récréation Entomologique, Bibliographie, Livre ...
1891 - Gale Group | NCCO-STM 1of2
... corpus : concentration géographique (quatre textes du diocèse de Laon, le dernier du Soissonnais) et chronologique (1163-1181) ; ... de pure dotation (sans déclaration d'épousailles). A Laon, les chartes de douaire sont rédigées par la ... préoccupations pastorales de l'église locale et, à Laon, reflètent vraisemblablement l'influence personnelle de l'évêque ...
1988 - Librairie Droz | Bibliothèque de l école des chartes
ARTHUR G. BOSCAWEN., W. BRAMWELL BOOTH., W. L. PAIGE COX., AN OLD-FASHIONED TOURIST. July 5., W. R. NICHOLSON, THOMAS RUSSELL., G.P. GOOCH., CALLISTHENES., HERMAN KLEIN. 40, Avenue-road, N.W.8, July 16., JAMES A. BOWIE., G. FREDERIC LEES. Hotel du Lee, Lugano, July 14., Our Labour Correspondent writes:-, ROWLAND R. ROBBINS., H.TRUSTRAM EVE., NOEL BUXTON., OWEN D. HUNT. Department of Zoology, University of Glasgow., J.A. WILLMOTT. 21, Queen's-road, Beckenham, Kent, July 15.,
... Broadcast., National Temperance Fete., British War Memorial At Laon., Report On Education In Scotland., Brazil-Paraguay Treaty, ...
1927 - Gale Group | TDA
... the pars lateralis of the anterior olfactory nucleus (lAON) and the anterior part of the piriform cortex ( ... the extrabulbar segments of centrifugal axons from the lAON and those from the aPC had distinct trajectories: ... between the intrabulbar segments of axons from the lAON and from the aPC. The intrabulbar segments of ...
Tópico(s): Neurobiology and Insect Physiology Research
2010 - Elsevier BV | Neuroscience
From Our Racing Correspondent, From Our Newmarket Correspondent, From Our Special Correspondent, From Our Parliamentary Correspondent, From Our Labour Correspondent, Morton Smart., Von Rintelen., Eltisley., P. R. Symonds., G. J. R. Potter, , A. Hamilton, , H. Murrell., From Our Aeronautical Correspondent, From Our Own Correspondent, From A Belgian Correspondent, From Our Correspondent, From A Military Correspondent, From A Dutch Correspondent, Norman Angell., Eva Reading, F. Egbert Hollond., W. L. Pollard-Willison, , Julius L. F. Vogel., T. H. Minshall., From Our Melbourne Correspondent, From Our Bridge Correspondent, -Andrew Marvell.,
... Continued Advance To Cambrai-Peronne Road Capture Of Laon Claimed R.A.F. Fighters' "Matchless Courage", The ...
1940 - Gale Group | TDA
Viral Barhate, Khushabu Agrawal, Vilas S. Patil, Sumit Patil, Ashok M. Mahajan,
The effect of in-situ LaON surface passivation in between La2O3/ZrO2 bilayer high-k and N2 plasma pre-treated 4H–SiC substrate formed by using plasma ... of high-k bilayer stack with and without LaON on SiC substrate respectively were determined by cross ... found on both samples. The presence of the LaON passivation layer in MOS device exhibits significantly improved ... 8.03 was found for Al/La2O3/ZrO2/LaON/SiC as compared to that of Al/La2O3/ ... reported here suggest that the Al/La2O3/ZrO2/LaON/SiC devices are useful for high power device ...
Tópico(s): Copper Interconnects and Reliability
2020 - Elsevier BV | Materials Science in Semiconductor Processing
Alexis Rochon, B. G. Sage, L. Cotte, G. A. Deluc,
... D'un Objet Étant Donnée, Déterminer Sa Grandeur, Laon Résultats De 218 Constitutions, Recherches Sur L'origine ...
0000 - Gale Group | NCCO-STM 1of2
Zhixiang Cheng, J.P. Xu, L. Liu, Yuan Huang, P. T. Lai, Wing Man Tang,
The effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2 gate dielectric ... investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOx and ... for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), ...
Tópico(s): Semiconductor materials and interfaces
2016 - American Institute of Physics | Applied Physics Letters
AN UNFORTUNATE., FREDERICK BARRY, Sworn Broker, 7. Birchin-lane, Cornhill., JOSEPH COHEN, Sworn Broker, 2, Bartholomew-lane., T. BISH, Stock Broker, Old State Lottery Offices, 4. Cornhill, and 9, Charing-cross.,
... fruiterer, of No. 33, Great Marylebone-street, Manchester-, LAON, July 28.-A trial of considerable importance is ...
1825 - Gale Group | TDA
... that he attended the lectures of Anselm of Laon, the most prominent theological teacher of his time, who died in 1117.6 The teaching at Laon was heavily biblical: Anselm's glosses on the ... say whether Henry's period of study at Laon - however long it may have been - took place ... 1092 he too had been a pupil at Laon. However that may be, we can certainly add ... of Anglo-Norman clerics who were educated at Laon in the early years of the twelfth century.Henry's connection with Laon may explain his interest in northern French (and ...
Tópico(s): Medieval Literature and History
2005 - Society for the Study of Medieval Languages and Literature | Medium Ævum
M. Boulard, M. Berthollet, G. De Razoumowsky, P. Cotte, M. Carmoi, M. Hassenfratz, M. De La Metherie, M. D'Antic De Servin, Valmont De Bomare,
... Servin, XIX De La Magnéfie, Observations Faites À Laon D'heure En Heure Sur La Boussole De ...
1786 - Gale Group | NCCO-STM 1of2