Dibyendu Chowdhury, Bishnu Prasad De, Bhargav Appasani, Navaneet Kumar Singh, Rajib Kar, Durbadal Mandal, Nicu Bizon, Phatiphat Thounthong,
... of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) ... The sensitivity of n-type JL-DM-DG-MOSFET and n-type JL-DM-GSDG-MOSFET-based biosensors have also been evaluated. The sensitivity (ΔVth) improved in JL-DM-GSDG MOSFET/JL-DM-DG-MOSFET-based biosensors for neutral/charged biomolecules is 116. ... lower threshold voltage is observed in the GSDG-MOSFET-based biosensor. The Ion/Ioff ratio is higher for DG-MOSFET-based biosensors. The proposed GSDG-MOSFET-based biosensor ...
Tópico(s): Semiconductor materials and devices
2023 - Multidisciplinary Digital Publishing Institute | Sensors
Moufu Kong, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang, Hongqiang Yang,
Abstract A new SiC superjunction power MOSFET device using high- k insulator and p-type pillar with an integrated Schottky barrier diode (H k -SJ-SBD MOSFET) is proposed, and has been compared with the SiC high- k MOSFET (H k MOSFET), SiC superjuction MOSFET (SJ MOSFET) and the conventional SiC MOSFET in this article. In the proposed SiC H k -SJ-SBD MOSFET, under the combined action of the p-type ... of the proposed SiC H k -SJ-SBD MOSFET is 0.67 mΩ·cm 2 with a ...
Tópico(s): Semiconductor materials and devices
2023 - IOP Publishing | Journal of Semiconductors
Hengyu Yu, Jun Wang, Shiwei Liang, Gaoqiang Deng, Hangzhi Liu, Bing Ji, Z. John Shen,
Planar split-gate MOSFETs (SG-MOSFETs) are promising in high-frequency power applications due to the fast turn on/off speeds and low switching loss. However, SG-MOSFETs suffer from crowded electric field at the edge ... This issue becomes more critical in 4H-SiC MOSFETs due to the high critical breakdown electric field. ... a new 1.2-kV 4H-SiC SG-MOSFET structure is proposed and investigated by TCAD simulation. ... adjacent split poly-Si gates (termed SFP-SG-MOSFET). In the blocking state, the source metal field ...
Tópico(s): Electromagnetic Compatibility and Noise Suppression
2022 - Institution of Engineering and Technology | IET Power Electronics
Roger Stark, Alexander Tsibizov, Ivana Kovacevic-Badstuebner, Thomas Ziemann, Ulrike Großner,
... of power metal-oxide-semiconductor field-effect transistors ( mosfet s) play an important role in the dynamic device performance. C–V characterization of the mosfet gate structure is a necessary step for evaluating the mosfet switching behavior and calibrating lumped equivalent capacitances of mosfet compact models. This article presents a comprehensive analysis ... of silicon (Si) and silicon carbide (SiC) power mosfet s leading to clear measurement guidelines. The requirements ... the selection of equivalent models used for the mosfet capacitance extraction, and the measurement frequency range are ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2022 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Power Electronics
Ruizhu Wu, S.N. Agbo, Simon Mendy, Erfan Bashar, Saeed Jahdi, Ortiz Gonzalez, Olayiwola Alatise,
... Circuit (SC) current sharing in parallel connected SiC MOSFETs and SiC Cascode JFETs have been investigated using ... variation is the most critical parameter in SiC MOSFETs, more so than device switching rate and initial ... JFETs is higher than that of the SiC MOSFETs, hence, the short-circuit energy is lower because ... in the SiC Cascode JFETs compared to SiC MOSFETs. Also, the input silicon MOSFET in the Cascode arrangement ensures better performance regarding ... the threshold voltage variation is less in silicon MOSFETs compared to SiC MOSFETs. Finite element models have ...
Tópico(s): Semiconductor materials and devices
2021 - Elsevier BV | Microelectronics Reliability
Springer Link
Saeid Deliri, Kazem Varesi, Yam P. Siwakoti, Frede Blaabjerg,
... are unidirectional. So, the count of switches (NSwitch), MOSFETs (NMOSFET), and gate-driver circuits (NDriver) are the ... Each switched-capacitor stage contains 2 unidirectional switches (MOSFETs), 2 capacitors, and 2 diodes. The addition of ... levels (NLevel), sources (NSource), capacitors (NCapacitor), switches (NSwitch), MOSFETs (NMOSFET), gate-driver circuits (NDriver), total devices (NDevice), ... equal steps, the proposed configuration requires less switches, MOSFETs and gate driver circuits than others (see Figure ...
Tópico(s): Advanced DC-DC Converters
2021 - Institution of Engineering and Technology | IET Power Electronics
Keita Tachiki, Takahisa Ono, Takuma Kobayashi, Tsunenobu Kimoto,
... channel effects (SCEs) begin to occur) in SiC MOSFETs was experimentally determined. We fabricated 4H-SiC MOSFETs with various channel lengths and acceptor concentrations and ... the minimum channel length in silicon carbide (SiC) MOSFETs, focusing on the increased rate of the drain ... the minimum channel length for the fabricated SiC MOSFETs with various acceptor concentrations in the p-body ... length and the acceptor concentration for these SiC MOSFETs shows a similar tendency to that for Si MOSFETs. The obtained minimum channel lengths in the SiC ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2021 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
Juefei Yang, Saeed Jahdi, Bernard H. Stark, Olayiwola Alatise, Jose Ortiz Gonzalez, Phil Mellor,
... and asymmetrical double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental ... 1 st quadrant, CoolSiC (SiC asymmetrical double-trench) MOSFET and SiC symmetrical double-trench MOSFET demonstrate more stable temperature coefficients. Silicon Superjunction MOSFETs exhibits the lowest turn-off switching rates due ... the large input capacitance. The evaluated SiC Planar MOSFET also performs sub-optimally at turn-on switching ... relatively larger reverse recovery charge of Silicon Superjunction MOSFET negatively impacts the turn-OFF transients compared with ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2021 - Institute of Electrical and Electronics Engineers | IEEE Open Journal of Power Electronics
Hengyu Yu, Shiwei Liang, Hangzhi Liu, Jun Wang, Z. John Shen,
... diode (FWD) in both Si and SiC power MOSFETs for power electronic applications. This is especially true for a SiC MOSFET since its inherent body diode has a very ... is to investigate a new 1200 V SiC MOSFET structure with an integrated heterojunction diode formed between ... type polysilicon and n-type SiC (termed HJD-MOSFET). The proposed HJD-MOSFET uses a mesa structure to accommodate the heterojunction ... active area while leaving the split-gate planar MOSFET cells in the trench. A p-shield region ... maintains a high breakdown voltage. Three key HJD-MOSFET device parameters are identified and optimized in this ...
Tópico(s): Multilevel Inverters and Converters
2021 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
E. R. Hsieh, K. T. Chen, P. Y. Chen, S.S. Wong, Steve S. Chung,
... gate metal-oxide-semiconductor-field-effect transistor (RG-MOSFET). An RG-MOSFET comprises a MOSFET and dielectric layers sandwiched between the top and ... metal-dielectric-metal (MDM). The gate of the MOSFET is electrically connected to the bottom electrode of ... nonswitching layer by hafnium dioxide (HfO 2 ). RG-MOSFET as a memory can be achieved by resistance ... top electrode metal and the drain of RG-MOSFET. The external voltage applied to the top electrode ... the threshold voltage (V th ) of an RG-MOSFET is modulated by different resistance values of MDM. ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2021 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
Yang Wen, Yuan Yang, Yong Gao,
... switching speed and lower losses, the silicon carbide MOSFETs (SiC MOSFETs) are widely used in higher power density and ... active gate driver (AGD) for high-power SiC MOSFETs is presented to balance the currents of parallel-connected SiC MOSFET modules. The principle of the AGD is based ... edges and current slopes among parallel-connected SiC MOSFET modules automatically. Each AGD measures and controls the current of its SiC MOSFET module individually. No extra supervising control circuit is ... and no restrictions on the number of SiC MOSFET modules connected in parallel exist. Finally, the switching ...
Tópico(s): HVDC Systems and Fault Protection
2020 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Power Electronics
Ruizhe Zhang, Xiang Lin, Jingcun Liu, Slavko Mocevic, Dong Dong, Yuhao Zhang,
The third quadrant (3rd-quad) conduction of power MOSFETs involves competing current sharing between the metal-oxide- ... V G ). For 1.2 kV SiC planar MOSFETs, it is well known that a positive V ... 3.3 kV and 10 kV) SiC planar MOSFETs. By combining the static characterization, simulation, and modeling, ... turns on, the body diode in high-voltage MOSFETs turns on at a source-to-drain voltage ( ... of the PN junction. In 10 kV SiC MOSFETs, the body diode does not turn on over ... buck converter based on a 10 kV SiC MOSFET half-bridge module was built and tested, which ...
Tópico(s): HVDC Systems and Fault Protection
2020 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Power Electronics
Ujjwal Karki, Nomar S. Gonzalez-Santini, Fang Zheng Peng,
... in both silicon (Si) and silicon carbide (SiC) MOSFETs, it requires a special attention in SiC MOSFETs. This is because the gate oxide in SiC MOSFETs is comparatively thinner than the gate oxide in Si MOSFETs, and thus, a higher electric field that appears ... monitoring the gate-oxide degradation process in Si MOSFETs, very few have been identified for their SiC ... three gate-oxide degradation precursors identified for Si MOSFETs: 1) threshold voltage, 2) gate-plateau voltage, and ... plateau time can also be extended to SiC MOSFETs. The second objective is to demonstrate analytically and ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2020 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
Naser Vosoughi Kurdkandi, Tohid Nouri,
... stress across the semiconductors is substantially low. Hence, MOSFETs with less ON-state resistances and diodes with ... High voltage gain, low voltage stress across power MOSFETs and reduced peak current ripple are the advantages ... circuit, which avoids the large voltage spikes across MOSFETs and improves the conversion efficiency. (iv) The diodes ... represent the output capacitors; and are the power MOSFETs; and are parasitic capacitors of MOSFETs; and are the clamp diodes. The turns ratio ... helps to reduce the voltage stress across the MOSFETs. The following assumptions are made to simplify the ...
Tópico(s): Microgrid Control and Optimization
2020 - Institution of Engineering and Technology | IET Power Electronics
... 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. In particular, the effect of ... other hand, the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is reduced by 44% and 24%, respectively, compared ... UMOSFET. Since the reverse transfer capacitance of DT-MOSFET and ST-MOSFET is superior to that of C-UMOSFET, it ... RON-SP × QGD). The HF-FOM of DT-MOSFET and ST-MOSFET is 289 mΩ∙nC, 224 ...
Tópico(s): HVDC Systems and Fault Protection
2020 - Multidisciplinary Digital Publishing Institute | Electronics
Haimeng Huang, Shaodi Xu, Wen-Jia Xu, Ke Hu, Junji Cheng, Hao Hu, Bo Yi,
... on,sp ) both for the high-permittivity (Hk) MOSFETs and superjunction (SJ) MOSFETs with design parameters expressed by breakdown voltage (BV) ... sp(opt) ) and the design parameters for both MOSFETs. Second, as the reflection of the process difficulty ... the R on,sp(opt) for the SJ MOSFET decreases as AR increases, whereas an optimum AR ... minimal R on,sp(opt) for the Hk MOSFET. Extensive comparisons demonstrate that when AR is small ... could be lower than that for the SJ MOSFET. Parameter designs are performed for the 900-V ...
Tópico(s): Advanced DC-DC Converters
2020 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
Catalina González‐Castaño, Carlos Restrepo, Roberto Giral, Jordi García-Amorós, Enric Vidal‐Idiarte, Javier Calvente,
... composed by a buck–boost cell of two MOSFET half bridges, an damping network connected in parallel ... switches at high frequency while the high-side MOSFET of the other half bridge is permanently in ... Transient voltage protection of high gate driver and MOSFETs The MOSFET driver used in the implementation of PS1 and ... and the intermediate node for each half-bridge MOSFETs, when the boost node (node b voltage) is ... are added to the basic schematic of the MOSFET driver, as shown in Fig. 8a. On the ... hand, for transient voltages on the gate-source MOSFET, a diode and a Zener diode of 16 ...
Tópico(s): Advancements in Battery Materials
2020 - Institution of Engineering and Technology | IET Power Electronics
Produção Nacional
Revisado por pares
Wesley Josias de Paula, Gabriel H. M. Tavares, Guilherme M. Soares, Pedro S. Almeida, Henrique A. C. Braga,
... Access Switching losses prediction methods oriented to power MOSFETs – a review Wesley Josias de Paula, Corresponding Author ... for power metal-oxide-semiconductor field-effect transistors (MOSFETs) switching losses using datasheet parameters. A detailed technical ... to obtain a high level of accuracy concerning MOSFET switching losses, mainly due to the uncertainty when ... most influence the measurements, one could list the MOSFET transconductance, the channel threshold voltage and the parasitic ... total energy switching losses [J] switching frequency [Hz] MOSFET transconductance [S] load current [A] drain current [A] ...
Tópico(s): Semiconductor materials and devices
2020 - Institution of Engineering and Technology | IET Power Electronics
Xiaochuan Deng, Xiaojie Xu, Xuan Li, Xu Li, Yi Wen, Wanjun Chen,
A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed and characterized in this letter. The LBD-MOSFET not only exhibits about 3 times lower diode ... to N + source region is formed in LBD-MOSFET owing to the existence of the depletion charge ... gate-to-drain capacitance (C gd ) of LBD-MOSFET are significantly reduced by about 21× and 15× in comparison with the conventional MOSFET (C-MOSFET), due to the reduction of the overlapping area ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2020 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Namrata Mendiratta, Suman Lata Tripathi,
... MOS transistors doubles because the size of the MOSFET is reduced. Reducing the size of the MOSFET reduces the size of the channel length which ... new designs and technologies are implemented. Double gate MOSFET design has shown improvement in performance as amplifiers over a single MOSFET. Silicon-based MOSFET design can be used in a harsh environment. ... increases the current drive capability of transistors. GAA MOSFET is an example of a quadruple gate around ... current keeping short channel effects under limit. Junctionless MOSFET operates faster and uses less power with increase ...
Tópico(s): Nanowire Synthesis and Applications
2020 - IOP Publishing | Journal of Semiconductors
Zhonglin Han, Guan Song, Yun Bai, Hong Chen, Xinyu Liu, Jiang Lu,
A novel 1200 V 4H-SiC MOSFET, which features a current spreading layer, a split-gate and a central P+ implant in the junction field effect transistor region (CSI-MOSFET), is proposed. The CSI-MOSFET achieves a better trade-off among specific on- ... in gate oxide and switching loss. The CSI-MOSFET is comprehensively optimized with numerical simulation, and then two kinds of CSI-MOSFETs (FCSI-MOSFET and GCSI-MOSFET with a floating/grounded central P+ implant) are further investigated. Compared with the conventional double implanted MOSFET (VDMOSFET), both FCSI-MOSFET and GCSI-MOSFET demonstrate ...
Tópico(s): HVDC Systems and Fault Protection
2020 - IOP Publishing | Semiconductor Science and Technology
Pranav M Tripathi, Harshit Soni, Rishu Chaujar, Ajay Kumar,
... GaN-BTG) metal oxide semiconductor field effect transistor (MOSFET) for high-speed and low-power applications. The electrical characteristics of GaN-BTG-MOSFET are compared with BTG MOSFET and conventional trench gate MOSFET. A comparative study of different performance factors such ... 9.83% decrement in Vth for GaN-BTG-MOSFET. Furthermore, the frequency analysis has been performed in ... the study of parametric variation of GaN-BTG-MOSFET with the change in channel length, oxide thickness ( ... also been presented. Results show that GaN-BTG-MOSFET can act as a promising structure for further ...
Tópico(s): GaN-based semiconductor devices and materials
2020 - Institution of Engineering and Technology | IET Circuits Devices & Systems
Manaswi Srivastava, Pavan Singh Tomar, Arun Kumar Verma,
... Section 2, the conduction losses in the switch/ MOSFET is calculated. Although, the main power loss components ... current rating according to SAE standards. 3.1 MOSFET losses Three types of losses are mainly associated with the MOSFET, they are, conduction loss, switching loss, and gate ... DC/DC converter are calculated. 3.1.1 MOSFET conduction loss MOSFET conduction loss is calculated from main channel and ... ratio, and is switching time period of the MOSFET. Equations (1) and (2) correspond to the current ...
Tópico(s): Wireless Power Transfer Systems
2019 - Institution of Engineering and Technology | IET Power Electronics