Kenji Natori, I. Sasaki, F. Masuoka,
The electrical characteristics of the concave MOSFET are analyzed by the two-dimensional numerical method and the theoretical result is in reasonable agreement with the experimental result. Even if the channel length of the concave MOSFET is short, the obtained current-voltage characteristics of the concave MOSFET are quite similar to those of the long-channel normal MOSFET and can be approximated by the normal MOSFET formula. In short-channel concave MOSFET's, the threshold voltage lowering due to the ...
Tópico(s): Semiconductor materials and devices
1978 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
... into account, are proposed for a buried-channel MOSFET (BC-MOSFET/ SOI). Simple expressions for threshold voltage and drain ... from the models for a short-channel BC-MOSFET/ SOI. The comparison between theory and experimental results ... bias coefficient γ of threshold voltage for BC-MOSFET's/ SOI is approximately proportional to TN D - ... γ depends slightly on the drain bias. BC-MOSFET's/SOI are able to be more miniaturized than surface-channel MOSFET's (SC-MOSFET's) at the small power source voltage, and SC-MOSFET's are able to be more miniaturized than ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
1982 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
T.C. Ong, P.K. Ko, Chenming Hu,
... field and substrate current models developed for n-MOSFETs are applicable to p-MOSFETs. The impact ionization rate extracted for holes is ... the gate current of surface-channel (SC) p-MOSFETs successfully. Device degradation in p-MOSFETs is due to trapped electrons in the oxide. p-MOSFET lifetime has good correlation with gate current in SC p-MOSFETs. The correlation is better than with substrate current. ... be larger in a buried-channel (BC) p-MOSFET than in a comparable SC n-MOSFET. This makes the SC MOSFET a much more ...
Tópico(s): Silicon Carbide Semiconductor Technologies
1990 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
A. El-Hennawy, M.H. El Said, Jean-Pierre Borel, G. Kamarinos,
Hot carriers at the SiSiO2 interface of MOSFETs play an important role in the modelling and characterisation of MOSFET devices especially if the MOSFET is derived by a strong narrow pulse. Hot ... increasingly important as the trend towards progressively smaller MOSFET geometries is increased. A simple 2-D model of the hot carrier motion inside the MOSFET channel is proposed. This model is used to evaluate the surface recombination velocity dependence on the MOSFET geometry and biasing voltages. The model is, therefore, ...
Tópico(s): Silicon and Solar Cell Technologies
1987 - Elsevier BV | Solid-State Electronics
V. Tilak, Kevin Matocha, Greg Dunne, Fredrik Allerstam, E.Ö. Sveinbjörnsson,
... density and Hall mobility on 4H-silicon carbide MOSFETs with gate oxides grown by sodium enhanced oxidation ( ... states. The threshold voltage changes with temperature in MOSFETs with gate oxides grown thermally with N 2 O but not significantly in MOSFETs with gate oxides grown by SEO. The superior ... stability at low temperatures in the SEO-based MOSFET compared to the N 2 O oxidation-based MOSFET is due to lower trap density near the ... edge. Gated diode C-V measurements showed that MOSFETs with gate oxide grown by SEO had a ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2009 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
Springer Link
D Manigandan, Ganesan Bharanidharan, Prakasarao Aruna, K. Devan, D Elangovan, Vikram Patil, R. Tamilarasan, S. Vasanthan S. Vasanthan, Singaravelu Ganesan,
... commercially available metal oxide semiconductor field effect transistor (MOSFET) detectors were studied for clinical electron beam irradiations. MOSFET showed excellent linearity against doses measured using an ... chamber in the dose range of 20-630cGy. MOSFET reproducibility is better at high doses compared to low doses. The output factors measured with the MOSFET were within +/-3% when compared with those measured ... a parallel plate chamber. From 4 to 12MeV, MOSFETs showed a large angular dependence in the tilt ...
Tópico(s): Radiation Detection and Scintillator Technologies
2009 - Elsevier BV | Physica Medica
Cynthia Chuang, Lynn Verhey, Ping Xia,
... to treatment. Metal oxide semiconductor field effect transistors (MOSFET) have the advantage of a faster and simpler ... to thermoluminescent dosimeters (TLD), and with the commercial MOSFET system, multiple detectors can be used simultaneously. In ... homogeneous dose regions. To evaluate the feasibility of MOSFET for routine IMRT dosimetry, a comprehensive set of ... 0.3 Gy to 4.2 Gy, the MOSFETs present a linear response, with a linearity coefficient ... square field, the dose variations measured by the MOSFETs for every 10 degrees from 0 to 180 ...
Tópico(s): Medical Imaging Techniques and Applications
2002 - Wiley | Medical Physics
H.S. Momose, T. Ohguro, Shigenari Nakamura, Y. Toyoshima, H. Ishiuchi, Hiroshi Iwai,
... was confirmed that low field mobility of n-MOSFETs on the [111] substrate is smaller than that on the [100] substrate and that of p-MOSFETs on [111] is larger than that on [100] ... found that most of the electrical properties of MOSFETs, with the notable exception of mobility, become almost ... dependent dielectric breakdown (TDDB) of the oxides and MOSFETs on the [111] substrate is slightly better than ... addition, the characteristics and reliability of oxides and MOSFETs on a wafer tilted 4/spl deg/ from [ ... deg/ off substrates for both n- and p-MOSFET cases. The reliability of oxides or MOSFETs on ...
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
2002 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
... ultra-small metal-oxide-semiconductor field effect transistors (MOSFETs) less than 100 nm have been widely reported ... article proposes the ballistic transport of carriers in MOSFETs, and presents the current-voltage characteristics of the ballistic n-channel MOSFET. The current is expressed with the elementary parameters ... pentode operation are specified as in the conventional MOSFET. Similar current-voltage characteristics in the ballistic transport regime are also investigated for the p-channel MOSFET, the dual gate ultra-thin silicon on insulator ...
Tópico(s): Silicon Carbide Semiconductor Technologies
1994 - American Institute of Physics | Journal of Applied Physics
A. GOPIRAJ, RAMESH S. BILLIMAGGA, Velayudham Ramasubramanian,
... dosimetric procedure. Metal oxide semiconductor field effect transistors (MOSFETs) have recently been proposed for use in radiation ... characteristics and to carry out the commissioning of MOSFET as an in-vivo dosimeter for high-energy ... of low sensitivity TN502RD and high sensitivity TN1002RD MOSFETs for entrance and exit dosimetry respectively for application ... vivo dosimetry in radiotherapy was carried out. The MOSFETs were characterized in terms of reproducibility, short-term ... field size dependence. The reproducibility of standard sensitivity MOSFET is about 1.4% (1 SD) and 1. ...
Tópico(s): Radiation Effects in Electronics
2008 - Elsevier BV | Reports of Practical Oncology & Radiotherapy
Jun Wang, Tiefu Zhao, Jun Li, Alex Q. Huang, Robert Callanan, Fatima Husna, Anant Agarwal,
Ten-kilovolt SiC MOSFETs are currently under development by a number of organizations in the United States, with the aim of enabling their ... to obtain the key device characteristics of SiC MOSFETs so that their realistic application prospect can be ... a proposed behavioral SPICE model. Using the validated MOSFET SPICE model, a 20-kHz 370-W dc/ ... loss in the 15.45-mm 2 SiC MOSFET is 23.6 W for the input power ... W. The characterization study of the experimental SiC MOSFET and the experiment of the SiC MOSFET-based ...
Tópico(s): Electromagnetic Compatibility and Noise Suppression
2008 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
Gang Du, Xiaoyan Liu, Zhiliang Xia, Jingfeng Yang, Ruqi Han,
... of germanium metal–organic–semiconductor field effect transistors (MOSFETs). In this paper, a 2D full-band Monte ... transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibrium transport properties are ... channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. ...
Tópico(s): Silicon Carbide Semiconductor Technologies
2010 - IOP Publishing | Chinese Physics B
Nicholas Hardcastle, Dean Cutajar, Peter Metcalfe, Michael Lerch, Vladimir L. Perevertaylo, Wolfgang A. Tomé, Anatoly Rosenfeld,
... is an investigation into the combination of a MOSFET radiation detector with a rectal balloon for real-time in vivo rectal wall dosimetry. The MOSFET used in the study is a radiation detector ... equivalent depth of measurement of 70 µm. Two MOSFETs were combined in a face-to-face orientation. ... and angular dependence were measured for the dual MOSFET in a 6 MV photon beam. The dual MOSFET was combined with a rectal balloon and irradiated ... with the planning system calculated dose. The dual MOSFET showed angular dependence within ±2.5% in the ...
Tópico(s): Advanced X-ray and CT Imaging
2010 - IOP Publishing | Physics in Medicine and Biology
Amanda Cherpak, Ryan Studinski, Joanna Cygler,
... to characterize metal oxide semiconductor field-effect transistors (MOSFETs) in a 6 MV conventional linac and investigate ... Materials and methods High sensitivity and standard sensitivity MOSFETs were first calibrated and then tested for reproducibility, ... treatment plan doses to evaluate the performance of MOSFETs in a high gradient radiation field. Results The ... 2.5% cGy/mV for the high sensitivity MOSFETs tested and 0.901 ± 2.4% cGy/mV for the standard sensitivity MOSFETs. MOSFET measured surface doses had an average agreement ...
Tópico(s): Radiation Detection and Scintillator Technologies
2007 - Elsevier BV | Radiotherapy and Oncology
Terry T. Yoshizumi, Philip C. Goodman, Donald P. Frush, Giao Nguyen, Greta Toncheva, Maksudur Sarder, Lottie Barnes,
... technology with metal oxide semiconductor field effect transistors (MOSFETs) to the assessment of organ dose during CT ... ways, one with TLDs and the other with MOSFETs. Twenty organ locations were selected in an adult anthropomorphic female phantom. High-sensitivity MOSFET dosimeters were used. For the reference standard, TLDs ... placed in the same organ locations as the MOSFETs. Both MOSFET and TLD detectors were calibrated with an X- ... doses and the percentage difference for TLDs and MOSFETs, respectively, were as follows: thyroid (0.34 cGy, ...
Tópico(s): Advanced Radiotherapy Techniques
2007 - American Roentgen Ray Society | American Journal of Roentgenology
Hong Xiang, Jun S. Song, A. Taracchini, Robert A. Cormack, Roy B. Tishler, G. Mike Makrigiorgos, Laurence E. Court, Lee M. Chin,
... to investigate the application and accuracy of micro‐MOSFET for superficial dose measurement under clinically used MV x‐ray beams. Dose response of micro‐MOSFET in the build‐up region and on surface ... First, percentage‐depth‐doses were measured with micro‐MOSFET under 6 and beams of normal incidence onto a flat solid water phantom. Micro‐MOSFET data were compared with the measurements from a ... onto the flat solid water phantom with micro‐MOSFET placed at depths of , , and below the surface. ... these settings. Finally, measurements were performed with micro‐MOSFET embedded in the first layer of bolus placed ...
Tópico(s): Radiation Therapy and Dosimetry
2007 - Wiley | Medical Physics
Zhenyu Qi, Xiaowu Deng, Shaomin Huang, Almon S. Shiu, Michael Lerch, Peter Metcalfe, Anatoly Rosenfeld, Tomas Kron,
... recently designed metal oxide semiconductor field effect transistor (MOSFET) dosimetry system was evaluated for quality assurance (QA) ... key parameters that might affect the accuracy of MOSFET measurements (i.e., source surface distance [SSD], field ... in vivo measurements were also performed with the MOSFET system during serial tomotherapy treatments administered to 8 head and neck cancer patients. Results MOSFET sensitivity did not change with SSD. For field ... energy spectrum was negligible in 6-MV photons. MOSFET system measurements and ion chamber measurements agreed at ...
Tópico(s): Medical Imaging Techniques and Applications
2011 - Elsevier BV | International Journal of Radiation Oncology*Biology*Physics
... single-gate dopant-segregated Schottky barrier (DSSB) SOI MOSFET and raised source/drain ultrathin-body SOI MOSFET (RSD UTB) has been carried out to explore ... p-type δ-doped partially insulated DSSB SOI MOSFET (DSSB Pi-OX-δ) has been proposed to ... improve the high-frequency performance of DSSB SOI MOSFET over RSD UTB. The improved analog/RF figures ... unilateral power gain in DSSB Pi-OX-δ MOSFET show the suitability of this device for analog/ ... UTB, DSSB SOI and DSSB Pi-OX-δ MOSFETs). The results of this implementation show that the ...
Tópico(s): Nanowire Synthesis and Applications
2011 - IOP Publishing | Semiconductor Science and Technology
Rajesh Kinhikar, Pramod Kumar Sharma, C. Tambe, Umesh Mahantshetty, Rajiv Sarin, Deepak D. Deshpande, Shyam Kishore Shrivastava,
... newly designed metal oxide semiconductor field effect transistor (MOSFET) OneDose in-vivo dosimetry system for Ir-192 ( ... same study to the clinical application of this MOSFET as an in-vivo dosimetry system. The MOSFET was used during high dose rate brachytherapy (HDRBT) ... the skin dose during IMC irradiation with a MOSFET and a TLD and compare it with the ... the accuracy of the measured results from the MOSFET. The mean doses measured with the MOSFET and the TLD were identical (0.5392 Gy, ... skin dose by 9% as verified by the MOSFET and TLD. The MOSFET provides adequate in-vivo ...
Tópico(s): Radiation Detection and Scintillator Technologies
2006 - IOP Publishing | Physics in Medicine and Biology
Ryosuke Kohno, Teiji Nishio, Tomoko Miyagishi, Eriko Hirano, Kenji Hotta, Mitsuhiko Kawashima, Takashi Ogino,
The metal oxide semiconductor field-effect transistor (MOSFET) dosimeter has been widely studied for use as a dosimeter for patient dose verification. The major advantage of this detector is its size, ... its ease of use. The commercially available TN502RD MOSFET dosimeter manufactured by Thomson and Nielsen has never ... used for proton dosimetry. Therefore we used the MOSFET dosimeter for the first time in proton dose measurements. In this study, the MOSFET dosimeter was irradiated with 190 MeV therapeutic proton ...
Tópico(s): Radiation Detection and Scintillator Technologies
2006 - IOP Publishing | Physics in Medicine and Biology
Shinichi Takagi, Tetsuo Tezuka, Toshifumi Irisawa, Shu Nakaharai, Tatsuro Maeda, T. Numata, Keiji Ikeda, Naoharu Sugiyama,
... currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review our recent results on high hole mobility p-MOSFETs using global/local SiGe or Ge channels. There ... and used to fabricate high mobility GOI p-MOSFETs. As for the local technologies, SGOI or GOI ... formed locally in the active area of p-MOSFETs on SOI wafers. It is shown that the ... as 10 is obtained in locally fabricated p-MOSFETs through the effects of high-Ge content and ... pursuing the optimal and individual design of n-MOSFETs and p-MOSFETs on a single Si wafer. ...
Tópico(s): Nanowire Synthesis and Applications
2006 - Elsevier BV | Materials Science and Engineering B
Rajesh Kinhikar, Pramod Kumar Sharma, C. Tambe, Deepak D. Deshpande,
... angular dependence) of a newly designed OneDosetrade mark MOSFET patient dosimetry system for use in HDR brachytherapy ... performed with a MicroSelectron HDR unit and OneDose MOSFET detectors. All dosimeters were normalized to 3 min ... was 60% and 40% mean response of the MOSFET at 2 and 3 cm, respectively, from the source. MOSFET results showed good agreement with TLD and parallel ... energy. Linearity (R2 = 1) was observed in the MOSFET signal with the applied dose range of 0. ... less than 1% after 10 min and the MOSFET detectors stayed stable (within 5%) over a period ...
Tópico(s): Advanced Optical Sensing Technologies
2006 - IOP Publishing | Physics in Medicine and Biology
A vertical power MOSFET with an interdigitated drift region using high- $k$ (Hk) insulator (Hk-MOSFET) is studied. Due to the fact that most ... the drift region when comparing with a conventional MOSFET with the same breakdown voltage. It is shown that the specific on-resistance of the Hk-MOSFET is comparable to that of the superjunction MOSFET (SJ-MOSFET) with the same breakdown voltage. The turn-on ... be little longer than those of the conventional MOSFET and the SJ-MOSFET. The theoretical results of the electrical characteristics are ...
Tópico(s): Advanced DC-DC Converters
2012 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices