X. Y,
... and Papers 1819, February Letter. From X. Y. Mram.
0000 - Gale Group | NCCO BritishPolitics
Rajesh Saha, Yogendra Pratap Pundir, Pankaj Kumar Pal,
... of conventional RAMs. However, the operational speed of MRAM is relatively lower than the SRAMs. Advanced switching ... the comparative analysis of STT and SOT-based MRAMs for the application of Large Last-Level Caches (L3Cs). It will give an insight into the MRAM from device to architectural level, in-aspect of ... the cell level, it is observed that STT-MRAM takes 50% less area with 74% reduction in leakage power dissipation as compared to SOT-MRAM. However, the SOT-MRAMs is 4× faster than the STT-MRAM. At ...
Tópico(s): Advanced Memory and Neural Computing
2022 - Elsevier BV | Journal of Magnetism and Magnetic Materials
Ahmet Inci, Mehmet Meric Isgenc, Diana Marculescu,
... spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM), have significant advantages compared to conventional SRAM due ... caches rely on conventional SRAM and emerging STT-MRAM and SOT-MRAM technologies. In the iso-capacity case, STT-MRAM and SOT-MRAM provide up to $3.8 \times $ and $4. ... conventional SRAM, respectively. Under iso-area assumptions, STT-MRAM and SOT-MRAM provide up to $2 \times $ and $2.3 \ ... perform a scalability analysis and show that STT-MRAM and SOT-MRAM achieve orders of magnitude EDP ...
Tópico(s): Semiconductor materials and devices
2021 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Joyce F. Braam, David J. Hetem, Clarissa E. Vergunst, Sophie Kuizenga Wessel, Martijn S. van Rooijen, R.H.T. Nijhuis, Maarten F. Schim van der Loeff, Alje P. van Dam, Sylvia M. Bruisten,
... of macrolide resistance-associated mutations in MG (MG-MRAM). In 2018, symptomatic and asymptomatic clients visiting sexually ... to detect MG of the newly developed MG-MRAM qPCR was compared to the MgPa qPCR, both ... and specificity to detect relevant mutations the MG-MRAM qPCR was compared to 23SrRNA sequencing analysis. The ... subsequently used to determine the presence of MG-MRAM at different anatomical locations and to identify risk factors for MG-MRAM. MG-positive clients (402) providing 493 MG-positive ...
Tópico(s): Blood groups and transfusion
2020 - Public Library of Science | PLoS ONE
Sandeep Krishna Thirumala, Yi-Tse Hung, Shubham Jain, Arnab Raha, Niharika Thakuria, Vijay Raghunathan, Anand Raghunathan, Zhihong Chen, Sumeet Kumar Gupta,
... we propose valley-coupled spin-hall memories (VSH-MRAMs) based on monolayer WSe2. The key features of ... and differential VSH effect based magnetic memories (VSH-MRAM and DVSH-MRAM, respectively). At the array level, the proposed VSH/DVSH-MRAMs achieve 50%/ 11% lower write time, 59%/ 67% ... margin, compared to single ended/differential (GSH/DGSH)-MRAMs. System level evaluation in the context of general ... better energy efficiency for the proposed (D)VSH-MRAMs over (D)GSH-MRAMs respectively. Further, the differential ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2020 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Nanotechnology
Yu-Ching Liao, Chenyun Pan, Azad Naeemi,
... spin-transfer-torque magnetic random access memory (STT-MRAM), spin-orbit-torque (SOT) MRAM, voltage-controlled exchange coupling (VCEC) MRAM, and magnetoelectric (ME) MRAM. Various material, device, and circuit parameters are optimized ... device options. The optimal oxide thickness of VCEC-MRAM is 1.6 nm because it is a ... READ energy-delay product (EDP), whereas, for STT-MRAM, the optimal oxide thickness is 1.3 nm ... a new design and cell layout for ME-MRAM in which the number of access transistors depends ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2020 - Institute of Electrical and Electronics Engineers | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Elham Cheshmikhani, Hamed Farbeh, Hossein Asadi,
Spin-transfer torque magnetic RAM (STT-MRAM) is known as the most promising replacement for static random access memory (SRAM) technology in large last-level cache memories (LLC). Despite ... immunity to radiation as the major advantages, STT-MRAM-based cache memory suffers from high error rates ... or two of these error types for STT-MRAM cache. However, the overall vulnerability of STT-MRAM caches, whose estimation is a must to design ... exploration and characterization of errors' behavior in STT-MRAM caches. To this end, we formulate the cache ...
Tópico(s): Advanced Data Storage Technologies
2019 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Reliability
N. Perrissin, Gabin Grégoire, Steven Lequeux, Luc Tillie, N. Strelkov, S. Auffret, L. D. Buda-Prejbeanu, R. C. Sousa, L. Vila, B. Diény, Lucian Prejbeanu,
... transfer torque magnetic random-access memory (p-STT-MRAM), called perpendicular shape anisotropy (PSA) STT-MRAM is presented. This approach consists of significantly increasing ... thickness of the storage layer in p-STT-MRAM to values comparable to the cell diameter so ... the MgO/FeCoB interfacial anisotropy. This PSA-STT-MRAM is provided by depositing a thick ferromagnetic (FM) ... Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to this robust source of bulk anisotropy, PSA-STT-MRAM offers a greatly improved downsize scalability over conventional ...
Tópico(s): Magneto-Optical Properties and Applications
2019 - Institute of Physics | Journal of Physics D Applied Physics
Ahmedullah Aziz, Sumeet Kumar Gupta,
... analyze the augmentation of spin-transfer torque (STT) MRAM with electrically driven selective phase transition of a ... on necessary design considerations for TS augmented (TSA) MRAMs. We deduce constraints for read and write biasing that yields improved read operation of TSA MRAMs. We explain the dependence of read/write performance ... the TS. With proper device-circuit optimization, TSA MRAM shows up to 70% larger sense margin, ~27% ... less power for read operation compared to STT MRAM (in nominal condition). We evaluate the impact of ...
Tópico(s): Advanced Memory and Neural Computing
2018 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Electron Devices
Arnab Raha, Akhilesh Jaiswal, Syed Shakib Sarwar, Hrishikesh Jayakumar, Vijay Raghunathan, Kaushik Roy,
... how emerging nonvolatile memory technologies such as STT-MRAM can improve the energy efficiency of these systems, either by using STT-MRAM as a drop-in replacement for Flash (henceforth referred to as the SRAM+STT-MRAM memory configuration) or using STT-MRAM as unified memory (henceforth referred to as the unified STT-MRAM memory configuration). However, both these configurations have significant drawbacks. Using the SRAM+STT-MRAM configuration leads to high checkpointing overhead due to the inefficient write operations of STT-MRAM whereas using the unified STT-MRAM configuration is ...
Tópico(s): Magnetic properties of thin films
2017 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Very Large Scale Integration (VLSI) Systems
David Cibula, Michal Zikán, D. Fischerová, Roman Kocián, A Germanová, Andrea Burgetová, Ladislav Dušek, Zdeňka Fartáková, Michaela Schneiderová, Kristýna Němejcová, J Sláma,
... pelvic floor reconstruction by modified rectus abdominis myoperitoneal (MRAM) flap after extensive pelvic procedures. Methods Surgical technique of MRAM harvest and transposition is carefully described. The patients in whom pelvic floor reconstruction with MRAM after either infralevator pelvic exenteration and/or extended ... was carried out were enrolled into the study (MRAM group, n = 16). Surgical data, post-operative morbidity, ... and previous treatment. Substantially less patients from the MRAM group required reoperation within 60 days of the ...
Tópico(s): Colorectal Cancer Surgical Treatments
2017 - Elsevier BV | Gynecologic Oncology
Sabpreet Bhatti, R. Sbiaa, Atsufumi Hirohata, Hideo Ohno, Shunsuke Fukami, S. N. Piramanayagam,
... based memories, in particular, magnetic random access memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale in 2006, the MRAM has grown to a 256 Mb product of Everspin in 2016. During this period, MRAM has overcome several hurdles and have reached a stage, where the potential for MRAM is very promising. One of the main hurdles that the MRAM overcome between 2006 and 2016 is the way the information is written. The 4 Mb MRAM used a magnetic field based switching technology that ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2017 - Elsevier BV | Materials Today
Yeongkyo Seo, Kon‐Woo Kwon, Kaushik Roy,
... spin-orbit torque magnetic random access memory (SOT-MRAM) for high-density, reliable, and energy-efficient on-chip memory application. Unlike the conventional SOT-MRAM requiring two access transistors, the proposed MRAM uses only one access transistor along with a ... integration density while maintaining the advantages of SOT-MRAM, such as low write energy and enhanced reliability ... paths. Our simulation results show that the proposed MRAM can achieve 30% and 50% reduction in bit- ... area in comparison to conventional spin-transfer torque MRAM (STT-MRAM) and SOT-MRAM, respectively, and ~2. ...
Tópico(s): Advanced Memory and Neural Computing
2016 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Rajesh Kumar Dubey, Arun Kumar,
... transform is invoked in multi-resolution auditory model (MRAM) and used for non-intrusive objective speech quality estimation. The MRAM provides a detailed time-frequency modelling of the ... by Gaussian Mixture Model (GMM) probabilistic approach using MRAM-based feature vector. Additionally, a recent auditory model ( ... used independently for comparison of the performance of MRAM features. The combination of MFCC and LSF features with MRAM features for non-intrusive speech quality estimation using ... the proposed method that uses a combination of MRAM features, MFCC, and LSF feature vectors for non- ...
Tópico(s): Acoustic Wave Phenomena Research
2015 - Institution of Engineering and Technology | IET Signal Processing
Fabian Oboril, Rajendra Bishnoi, Mojtaba Ebrahimi, Mehdi B. Tahoori,
Magnetic Random Access Memory (MRAM) is a very promising emerging memory technology because of its various advantages such as nonvolatility, high density and scalability. In particular, Spin Orbit Torque (SOT) MRAM is gaining interest as it comes along with ... benefits of its predecessor Spin Transfer Torque (STT) MRAM, but is supposed to eliminate some of its ... split of read and write paths in SOT-MRAM promises faster access times and lower energy consumption compared to STT-MRAM. In this paper, we provide a very detailed ...
Tópico(s): Quantum and electron transport phenomena
2015 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Luís Vitório Cargnini, Lionel Torres, Raphael M. Brum, Sophiane Senni, Gilles Sassatelli,
... the quantum tunneling effect. Magnetic random access memory (MRAM) is a candidate technology to replace SRAM, assuming ... The write current of spin transfer torque (STT)-MRAM is a known limitation; however, this has been ... present a comprehensive comparison of spin transfer torque-MRAM (STT-MRAM) and SRAM cache set banks. The non-volatility of STT-MRAM allows the definition of new instant on/off ... optimizations. Through our experiments, we demonstrate that STT-MRAM is a candidate for the memory hierarchy of ...
Tópico(s): Advanced Memory and Neural Computing
2014 - Multidisciplinary Digital Publishing Institute | Journal of Low Power Electronics and Applications
Dmytro Apalkov, A. V. Khvalkovskiy, Steven Watts, V. Nikitin, Xueti Tang, D. K. Lottis, Ki-Seok Moon, Xiao Luo, Eugene Chen, Adrian Ong, A. Driskill-Smith, M. Krounbi,
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages ... an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution for advanced process nodes. STT-MRAM features fast read and write times, small cell ... architecture with relatively small associated cost added. STT-MRAM is essentially a magnetic multilayer resistive element cell ... we give an overview of the existing STT-MRAM technologies currently in research and development across the ...
Tópico(s): Characterization and Applications of Magnetic Nanoparticles
2013 - Association for Computing Machinery | ACM Journal on Emerging Technologies in Computing Systems
Víctor López‐Domínguez, Yixin Shao, Pedram Khalili Amiri,
The emergence of embedded magnetic random-access memory (MRAM) and its integration in mainstream semiconductor manufacturing technology ... the initial interest in the existing generation of MRAM—which is based on the spin-transfer torque ( ... compared to embedded Flash (eFlash), the focus of MRAM research and development efforts is increasingly shifting toward ... and speed vs endurance trade-offs to make MRAM applicable to a wider range of memory markets, as well as to utilize the potential of MRAM in various unconventional computing architectures that utilize the ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2023 - American Institute of Physics | Journal of Applied Physics
Mahdi Talebi, Arash Salahvarzi, Amir Mahdi Hosseini Monazzah, Kevin Skadron, Mahdi Fazeli,
STT-MRAM is regarded as an extremely promising NVM technology for replacing SRAM-based on-chip memories. While STT-MRAM memories benefit from ultra-low leakage power and ... failure; storing a wrong value in an STT-MRAM cell during a write operation, is the most ... architecture equipped with efficient replacement policies for STT-MRAM-based cache memory hierarchy to improve the robustness of STT-MRAM part against the write failures. ROCKY reduces susceptible transitions in STT-MRAM cache memories leading to more reliable STT-MRAM ...
Tópico(s): Parallel Computing and Optimization Techniques
2020 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Computers
... spin-orbit torque magnetic random access memory (SOT-MRAM), suitable for high-density and low-power on- ... of write access transistor. Furthermore, the proposed SOT-MRAM still retains the advantages of SOT-MRAM such as low write energy dissipation, high read- ... tunnel junction. In comparison with the conventional SOT-MRAM bit cells, our proposed MRAM bit cell can have 20% less bit-cell area. Even compared with the standard STT-MRAM, our proposed bit cell still achieves higher integration density. Moreover, the shared bitline SOT-MRAM achieves >6× lower write power and higher read- ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2018 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Ibrahim Ahmed, Zhengyang Zhao, Meghna G. Mankalale, Sachin S. Sapatnekar, Jian‐Ping Wang, Chris H. Kim,
... spin transfer torque magnetoresistive random access memory (STT-MRAM) is the leading candidate for spin-based memories. ... write energy and read disturbance of the STT-MRAM motivated researchers to find other solutions. The spin Hall effect (SHE)-based MRAM is an alternative for the STT-MRAM, which also provides nonvolatility, zero leakage, and competitive ... the write energy and delay of the STT-MRAM and the SHE magnetoresistive random access memory (SHE-MRAM) for various write schemes including thermal fluctuation. Our ...
Tópico(s): Magnetic and transport properties of perovskites and related materials
2017 - Institute of Electrical and Electronics Engineers | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Hongbin Sun, Chuanyin Liu, Wei Xu, Jizhong Zhao, Nanning Zheng, Tong Zhang,
... leakage power, and nonvolatility, magnetic random access memory (MRAM) appears to be a promising memory technology for ... cache memory in microprocessors. However, the write-to-MRAM process is relatively slow and results in high dynamic power consumption. Such inherent disadvantages of MRAM make researchers easily conclude that MRAM can only be used for low-level caches ( ... are less frequently accessed and slow write to MRAM can be more easily compensated using simple architectural ... attempts to show that, with appropriate architecture design, MRAM can also be used in L1 cache to ...
Tópico(s): Advancements in Battery Materials
2010 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Chin-Lung Su, Chih-Wea Tsai, Cheng‐Wen Wu, Chien‐Ching Hung, Young-Shying Chen, Ding-Yeong Wang, Yuan-Jen Lee, Ming‐Jer Kao,
The magnetic random access memory (MRAM) is considered one of the potential candidates that will replace current on-chip memories (RAM, EEPROM, and flash memory) in the future. The MRAM is fast and does not need a high ... present the write disturbance fault (WDF) model for MRAM, i.e., a fault that affects the data stored in the MRAM cells due to excessive magnetic field during the ... magnetic tunneling junction (MTJ) device of the toggle MRAM to obtain circuit simulation results. We then present an MRAM fault simulator called RAMSES-M, based on which ...
Tópico(s): Advancements in Photolithography Techniques
2008 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Abdolah Amirany, Kian Jafari, Mohammad Hossein Moaiyeri,
... double data rate magnetic random access memory (DDR-MRAM), which can store information at both clock levels. ... TSMC CMOS technology show that the proposed DDR-MRAM has at least 52% lower write PDP and ... to-maximum input frequency ratio than the conventional MRAMs. Monte–Carlo simulations also confirm the correct and ... process variation. Moreover, based on the designed DDR-MRAM cell, three architectures are proposed to design $m\times n$ DDR-MRAM arrays. These architectures are designed and optimized for ...
Tópico(s): Magnetic properties of thin films
2022 - IEEE Magnetics Society | IEEE Transactions on Magnetics
Abdurrahim Toktaş, Deniz Üstün, Mustafa Tekbaş,
Multilayer radar absorbing material (MRAM) is composed by superimposing different dielectric material layers with various thicknesses for reducing the reflection of electromagnetic (EM) wave. In ... design of four broad-band and broad-angle MRAMs (BB-MRAMs) at the most interested radar bands 2–8, ... the incident wave angle and frequency. The BB-MRAMs are optimally designed by determining simultaneously the design ... the trade-off among the objectives. The BB-MRAMs are also verified under various cases through a ...
Tópico(s): Metamaterials and Metasurfaces Applications
2020 - Institution of Engineering and Technology | IET Microwaves Antennas & Propagation
Arash Nejat, Frédéric Ouattara, Mohammad Mohammadinodoushan, Bertrand Cambou, K. Mackay, Lionel Torres,
... Different PUFs based on Magnetic Random-Access-Memory (MRAM) devices have been studied and proposed in the ... on dies fabricated with a type of the MRAM technology namely Thermally-Assisted-Switching MRAM (TAS-MRAM). To the best of our knowledge, this is the first experimental validation of a TAS-MRAM-based PUF. We demonstrate how voltage values used for writing in the TAS-MRAM cells can make stochastic behaviors required for PUF ... preliminary findings on the practical application of TAS-MRAM-based PUFs in authentication protocols. Besides, the results ...
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
2020 - Institute of Electrical and Electronics Engineers | IEEE Access
Bi Wu, Chao Wang, Zhaohao Wang, Ying Wang, Deming Zhang, Dijun Liu, Youguang Zhang, Xiaobo Sharon Hu,
... technology, the Spin Transfer Torque Magnetic RAM (STT-MRAM) remains limited to low-level, high-capacity caches ... still unsatisfactory write access speed. Spin Orbit Torque MRAM (SOT-MRAM), which has been proposed to tackle this issue, ... two SOT magnetic tunnel junctions) based field-free MRAM, which can achieve higher read speed and reliability ... is two orders of magnitude lower than STT-MRAM. Additionally, compared to SRAM, for 8 MB cache memory, the read speed of 3T2SOT MRAM is enhanced by 38.9%. Compared to conventional ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2020 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Circuits and Systems I Regular Papers
Vikas Nehra, Sanjay Prajapati, Piyush Tankwal, Željko Žilić, T. Nandha Kumar, Brajesh Kumar Kaushik,
... spin transfer torque magnetic random access memory (STT-MRAM)-based hybrid CMOS/MTJ architectures are being used. ... a large number of circuits based on STT-MRAM have been proposed. However, they have limitations related ... this article, we propose a differential spin Hall MRAM (DSH-MRAM)-based hybrid CMOS/MTJ magnetic 4-2 compressor. ... of the MTJs. When compared with previous STT-MRAM-based designs, the proposed compressor shows 97% improvement ... product (PDP) characteristics. The write circuit in DSH-MRAM consumes merely 5 nW in comparison to 2 ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2019 - IEEE Magnetics Society | IEEE Transactions on Magnetics
Jing-Yuan Luo, Hsiang-Yun Cheng, Ing-Chao Lin, Da‐Wei Chang,
... spin-transfer torque magnetoresistive random access memory (STT-MRAM) with SRAM-comparable read speed is a good ... build large last-level caches (LLCs). However, STT-MRAM suffers from long write latency and high write ... been proposed to combine the merits of STT-MRAM and SRAM. In such a hybrid SRAM/STT-MRAM LLC, intelligent block placement and migration policies are ... SRAM and keep read-intensive blocks in STT-MRAM for reducing the energy consumption of hybrid LLCs. ... capture the energy-harmful access behavior in STT-MRAM, especially the writes caused by repetitive data transfer ...
Tópico(s): Advanced Memory and Neural Computing
2019 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Computers
Elham Cheshmikhani, Hamed Farbeh, Seyed Ghassem Miremadi, Hossein Asadi,
... memory technologies, $Spin$ - $Transfer\; Torque\; Magnetic\; RAM$ (STT-MRAM) is known as the most promising replacement for ... based cache memories. The main advantages of STT-MRAM are its non-volatility, near-zero leakage power, ... Despite these advantages, high error rate in STT-MRAM cells due to $retention\; failure$ , $write\; failure$ , and $ ... the reliability of cache memories built upon STT-MRAM technology. The error rate is significantly increased in ... temperature, which further affects the reliability of STT-MRAM-based cache memories. The major source of heat ...
Tópico(s): Semiconductor materials and devices
2018 - Institute of Electrical and Electronics Engineers | IEEE Transactions on Computers