Phil Yates, Tunku Varadarajan, Jon Ashworth, John Grieve Smith, Nick Nuttall, Andrew Pierce, Kevin Ferrie, Grace Bradberry, Rob Hughes, Sarah Potter, Duncan Fallowell, Magnus Linklater, Osman Streater, Michael Kelly, Roy Porter, John O'Leary, Education Editor, Gavin Lumsden, Philip Howard, Hilary Finch, Ian Murray, Nicholas Hunt, Director-General, Oliver Holt Football Correspondent, Carl Mortished, Morag Preston, Simon Wilde, Kevin Eason, Christine Buckley Industrial Correspondent, Geoff Brown, Philip Bassett Industrial Editor, Joe Joseph, Robert Sheehan, Bridge Correspondent, Jon Massey, Alan Thompson, John Bryant, Nicholas Watt, Political Correspondent, Peter Crosland, Pugh & Way, Dominic Walsh, Shirley English, John Sutherland, Raymond Keene Chess Correspondent, Lawrence James, Richard Evans, Racing Correspondent, Martin Barrow, Peter Waymark, Alan Hamilton, Robin Young, Stephen Farrell, John Newman, Robert Bruce, Michael Clark, David Hands, Martin Fletcher Chief Ireland Correspondent, Charles Bremner, Sebastian Barry, Ian McIntyre, Michael Binyon Diplomatic Editor, Lisa Jardine, Jasper Gerard, Roger Scruton, James Doyle, Paul Durman, Dr John Turner, Neil Harman, Mike O'brien, Martyn Palmer, John Hopkins, Arthur Leathley and Dominic Walsh, Paul Sexton, Barry Millington, Richard Miles, Banking Correspondent, John Higgins, Dalya Alberge, Arts Correspondent, Adam Jones, A. P. Walter, Raymond Keene, Polly Newton, Emma Wilkins, Matt Dickinson, Geoff Cooke, Paul Wilkinson, Alix Ramsay, Jill Sherman, Damian Whitworth, Susan Gray, Oliver August, Jack Rowell, James Landale and Polly Newton, Christopher Thomas, William Rees-Mogg, Joanna Pitman, Richard Courtney, Vice-President, Giles Whittell, Jason Nisse, Christopher Walker, Jonathan Wills, Simon De Bruxelles, Mel Webb, Des Dearlove, Richard Duce and Stewart Tendler, Gerald Larner, Kevin McCarra, Matthew Parris, Chris McGrath, D. E. Rae, Russell Jenkins, Greg Smith, Peter Riddell, Ben MacIntyre, Claire Bloom, Tom Culver, Philip Webster, Jason Cowley, Gary Teichmann, John J. Graham, Chairman, Fraser Nelson, Mark Henderson, Martin Waller, John Mitchell, Benedict Nightingale, Brian Ashton, Don McIntyre, Tom Rhodes, Dr Thomas Stuttaford, Ian Brodie, James Bone and David Charter, Education Correspondent, Michael Evans Defence Correspondent, Richard Morrison, Frances Gibb, James Christopher, Richard Miles and Jon Ashworth, Arthur Leathley, Michael Henderson, Robin Lodge, Michael Beloff, Michael Evans, Stephen Powers, Jan Raath, Edward Gorman Sailing Correspondent, David Hands, Rugby Correspondent, Richard Ford, Colin McQuillan, E. M. Holt, Jason Nisse and Richard Miles, Alasdair Murray, Economics Correspondent, Martil Waller, Christine Buckley, Industrial Correspondent, Adam Fresco and Paul Wilkinson,
Best for Books Duke's secret of success:'my tolerant wife' Golden wedding tributes to family Rescuer lost Septuplets born Index MPs give Harman 'roasting' ...
1997 - Gale Group | TDA
Amina Azouagh, Rabei El Bardai, Ismail Hilal, Jamal Stitou El Messari,
... System model to the establishmentof floodplain maps for Martil river. Modeling with Hec-Ras enables calculation of, ... flow configurations and different cross-sectional zones along Martil River, i. e., from the confluence with the ...
Tópico(s): Hydrology and Watershed Management Studies
2018 - European Scientific Institute | European Scientific Journal ESJ
Adel Alshawafi, Mohamed Analla, Ebrahim Alwashali, Mustapha Aksissou,
Plastic waste at the coastal wetland in Martil beach in the North-East of Morocco is one of the problems that have appeared recently. This study aims to characterize the marine debris in the coast of Martil during the year 2015. The sampling is seasonally ...
Tópico(s): Microplastics and Plastic Pollution
2017 - Elsevier BV | Marine Pollution Bulletin
M. Benajiba, Younes Saoud, Abdelilah Lamribah, Mustapha Ahrikat, Nadia Amajoud, Ouissal Ouled-Zian,
... polluants liquides et solides. La commune urbaine de Martil, comme exemple (nord du Maroc) a connu un ... sans aucun traitement. La rivière de l’oued Martil avoisinant la ville est utilisée comme réceptacle des ...
Tópico(s): Water management and technologies
2013 - INRS-Eau, Terre et Environnement | Revue des sciences de l eau
Ahmed Derdouri, Narjiss Satour, Yuji Murayama, Takehiro Morimoto, Toshihiro Osaragi, Adil Salhi,
... paper presents an in-depth city profile analyzing Martil—an emerging coastal satellite urban center in northern Morocco. Situated within a rapidly urbanizing context, Martil exemplifies organic satellite city dynamics in the Global South. The analysis tracks Martil's demographic, spatial, economic, social, environmental, and planning ... equitable development and ecological resilience. The study situates Martil locally and comparatively, underscoring mismatches between prevailing models ...
Tópico(s): Urban and Rural Development Challenges
2024 - Elsevier BV | Cities
Abdelilah Lamribah, MH Benajiba, Younes Saoud, Mustapha Ahrikat, M Benzakour,
The urban district of Martil in northwest ofMoroccohas expensed greatly in the last decade 2003/2012, and the numerous large infrastructure projects are underway. Wastewaters ... are collected and partially discharged into nature. TheriverofOued Martil, bordering the city is considered receptacle of all ... by nitrates and nitrites in the groundwater of Martil district, a study was conducted during one year ( ...
Tópico(s): Water Quality and Pollution Assessment
2013 - Research Laboratory in Subterranean and Surface Hydraulics | Larhyss journal
Hedvig Prokos, Hasnaa Baba, Dénes Lóczy, Younès El Kharim,
... abruptly rise above the valley of the river Martil. Leaving the city, the river of only 22 ... into the Mediterranean Sea across the relatively wide Martil Plain. Given the geographical and geological setting of ...
Tópico(s): Landslides and related hazards
2016 - | Hungarian Geographical Bulletin
Mahjoub Himi, Josefina C. Tapias, Sara Benabdelouahab, Adil Salhi, L. Rivero, Mohammed Elgettafi, Abdenabi El Mandour, Jamal Stitou, A. Casas,
... and the extension of saltwater intrusion in the Martil-Alila coastal region (Morocco) as a complement to ...
Tópico(s): Geophysics and Gravity Measurements
2016 - Elsevier BV | Journal of African Earth Sciences
K.C. Nebaghe, Y. El Boundati, Khadija Ziat, Ahmed Naji, Lotfi Rghioui, Mohammed Saidi,
... adsorption equilibrium data of Cu(II) onto treated Martil sand (TMS). For this, six error analysis methods ...
Tópico(s): Adsorption and biosorption for pollutant removal
2016 - Elsevier BV | Fluid Phase Equilibria
Luca Giorgio Bellucci, Bouchta El Moumni, F. Collavini, M. Frignani, S. Albertazzi,
... and in surficial sediment samples collected in the Martil river, which borders the industrial town of Tetouan. ... be an effect of changing grain size. The Martil River sediments are slightly contaminated by Cu and ...
Tópico(s): Historical and Environmental Studies
2003 - Springer Science+Business Media | Journal de Physique IV (Proceedings)
M. Benmakhlouf, Ahmed Chaloüan,
... collapse of this basin francaisLe bassin de Tetouan-Martil a connu au cours de son histoire geologique ...
Tópico(s): Archaeological and Geological Studies
1994 - | Geogaceta
Elise Basquin, Apolline El Baz, Jacques Sainte-Marie, Alain Rabaute, Maud Thomas, Sara Lafuerza, Abdelmounim El M’rini, Denis Mercier, Elia d’Acremont, Marie-Odile Bristeau, Axel Créach,
... to analyse the exposure of the plain of Martil (north of Morocco), by using four hazard mapping ...
Tópico(s): Coastal and Marine Dynamics
2023 - Elsevier BV | Natural Hazards Research
Kawtar Kettani, A. Víchez Quero, D. Calle Martínez, T. El Ouazzani,
Un inventaire des Chironomidés de l'Oued Martil est effectué : 95 espèces ont été recensées dont 14 sont nouvellement citées pour le Maroc. Cet inventaire porte le total des espèces actuellement ...
Tópico(s): Coleoptera: Cerambycidae studies
1995 - EDP Sciences | Annales de Limnologie - International Journal of Limnology
Mohamed Hilali, Youssef Timoulali, Taj Benyounes, Mohamed Ahniche, Rabie El Bardai, Sahel Yattara,
... an indicator for liquefaction potential sites in the Martil city based on the microtremor measurements. Liquefaction assessment ...
Tópico(s): Geotechnical Engineering and Underground Structures
2021 - EDP Sciences | E3S Web of Conferences
Hajar Bouzaidi, Mustapha Maâtouk, Bouchta El Moumni, Ouassima Haroufi, Mahmoud A. Saber, Esraa E. AbouElmaaty, Mouna Daoudi,
... and exploitation level of the smooth clam on Martil coast. Samples were collected monthly from July 2016 ...
Tópico(s): Aquatic Invertebrate Ecology and Behavior
2021 - Elsevier BV | Regional Studies in Marine Science
Achraf Guellaf, Nard Bennas, Mohamed El Haissoufi, Ouassima L’Mohdi, Kawtar Kettani,
... de muestreo en la cuenca mediterránea del río Martil en el noroeste de Marruecos. El estudio taxonómico ... por primera vez en la cuenca del río Martil. La riqueza y abundancia de los tres órdenes ... odonatos, y hemípteros de la cuenca del rio Martil están constituidos fundamentalmente por elementos mediterráneos (52%) y ... de rehabilitación que operan al nivel del río Martil alterando su estado ecológico y creando una buena ...
Tópico(s): Diptera species taxonomy and behavior
2021 - Spanish National Research Council | Graellsia
Achraf Guellaf, Jalal Kassout, Vladimiro Boselli, Nard Bennas, Majida El Alami, Sanae Errochdi, Kawtar Kettani,
... study aimed to evaluate the effects of the Martil River rehabilitation project and recently constructed dam infrastructures ... river rehabilitation project led to profound changes in Martil River’s ecosystem and water quality over time. ...
Tópico(s): Hydrology and Sediment Transport Processes
2023 - | Hydrobiology
E. García-Hemme, R. García-Hernansanz, J. Olea, David Pastor, A. del Prado, I. Mártil, G. González-Dı́az,
We report room-temperature operation of 1 × 1 cm2 infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by a pulsed laser melting process. A high sub-band gap responsivity of 34 mV W−1 has been obtained operating at the useful telecommunication applications wavelength of 1.55 μm (0.8 eV). The sub-band gap responsivity shows a cut-off frequency as high as 1.9 kHz. ...
Tópico(s): Nanowire Synthesis and Applications
2014 - American Institute of Physics | Applied Physics Letters
E. García-Hemme, R. García-Hernansanz, J. Olea, David Pastor, A. del Prado, I. Mártil, G. González-Dı́az,
We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal transition limit show an important increase of the photoresponse with respect to a Si reference sample. Their photoresponse extends into the far infrared region and presents a sharp photoconductivity edge that moves towards lower photon energies as the temperature ...
Tópico(s): Silicon and Solar Cell Technologies
2013 - American Institute of Physics | Applied Physics Letters
J. Olea, David Pastor, A. del Prado, E. García-Hemme, R. García-Hernansanz, I. Mártil, G. González-Dı́az,
In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements ...
Tópico(s): Semiconductor materials and interfaces
2013 - American Institute of Physics | Journal of Applied Physics
E. García-Hemme, R. García-Hernansanz, J. Olea, David Pastor, A. del Prado, I. Mártil, G. González-Dı́az,
We have analyzed the increase of the sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ΔG□, even higher than that measured in a silicon reference sample. This increase in the ΔG□ magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for ...
Tópico(s): Advanced Semiconductor Detectors and Materials
2012 - American Institute of Physics | Applied Physics Letters
J. Olea, G. González-Dı́az, David Pastor, I. Mártil, Antonio Martı́, E. Antolín, A. Ĺuque,
Si samples have been implanted with very high Ti doses (over the theoretical Mott limit) to obtain an intermediate band (IB) in the host semiconductor. The electronic transport properties of this material have been analyzed by temperature-dependent sheet resistance and Hall effect measurements in the 7–400 K range. The experimental results are successfully explained by means of an analytical two-layer model, in which the implanted layer and the substrate behave as an IB/n-Si type junction. We deduce ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2011 - American Institute of Physics | Journal of Applied Physics
J. Olea, A. del Prado, David Pastor, I. Mártil, G. González-Dı́az,
We have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration around 2 × 1020 cm−3, which is well above the Mott limit, within a 150 nm thick layer. Samples PLM-annealed at the highest energy density (1.8 J/cm2) exhibit good lattice reconstruction. Independent of the annealing energy density, in all of the samples we observe ...
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
2011 - American Institute of Physics | Journal of Applied Physics
J. Olea, M. Toledano-Luque, David Pastor, E. San Andrés, I. Mártil, G. González-Dı́az,
In this paper, we present a detailed characterization of high quality layers of Si implanted with Ti at high doses. These layers are intended to the formation of an intermediate band (IB) solar cell. The main requirement to obtain an IB material is to reach an impurity concentration beyond the Mott limit, which is, in this case, much higher than the solid solubility limit. To overcome this limit we used the combination of ion implantation and pulsed-laser melting as nonequilibrium techniques. Time- ...
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
2010 - American Institute of Physics | Journal of Applied Physics
Helena Castán, S. Dueñas, H. García, A. Gómez, L. Bailón, M. Toledano-Luque, A. del Prado, I. Mártil, G. González-Dı́az,
The influence of the silicon nitride blocking layer thickness on the interface state densities (Dit) of HfO2/SiNx:H gate-stacks on n-type silicon have been analyzed. The blocking layer consisted of 3 to 7 nm thick silicon nitride films directly grown on the silicon substrates by electron-cyclotron-resonance assisted chemical-vapor-deposition. Afterwards, 12 nm thick hafnium oxide films were deposited by high-pressure reactive sputtering. Interface state densities were determined by deep-level transient ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2010 - American Institute of Physics | Journal of Applied Physics
J. Olea, G. González-Dı́az, David Pastor, I. Mártil,
In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through ...
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
2009 - Institute of Physics | Journal of Physics D Applied Physics
G. González-Dı́az, J. Olea, I. Mártil, David Pastor, Antonio Martı́, E. Antolín, A. Ĺuque,
The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 1021 cm−3, are measured in the 90–370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify ...
Tópico(s): Nanowire Synthesis and Applications
2009 - Elsevier BV | Solar Energy Materials and Solar Cells
E. Antolín, Antonio Martı́, J. Olea, David Pastor, G. González-Dı́az, I. Mártil, A. Ĺuque,
The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 1020–1021 cm−3 concentration range show an increase in the lifetime, in agreement with the ...
Tópico(s): Silicon Nanostructures and Photoluminescence
2009 - American Institute of Physics | Applied Physics Letters
David Pastor, J. Olea, M. Toledano-Luque, I. Mártil, G. González-Dı́az, Jordi Ibáñez, R. Cuscó, L. Artús,
We have studied the laser thermal annealing (LTA) effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction (GIRXD), and transmission electron microscopy (TEM) measurements. After LTA process, the Raman spectra of samples annealed with the highest energy density show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding the ...
Tópico(s): Semiconductor materials and interfaces
2009 - American Institute of Physics | Journal of Applied Physics
J. Olea, M. Toledano-Luque, David Pastor, G. González-Dı́az, I. Mártil,
Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 1018 cm−3. Hall effect measurements show n-type samples with mobility values of about 400 cm2/V s at room temperature. These results clearly indicate that Ti solid solubility limit in Si has been exceeded by far without the formation of a titanium silicide layer. This is a promising result toward obtaining of an intermediate band into Si that allows the design ...
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
2008 - American Institute of Physics | Journal of Applied Physics