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Artigo Acesso aberto Revisado por pares

Sheng-Liang Yang, Sai-Nan Zheng, Shaopeng Yuan, Tian-Xiao He,

... by weighted Delannoy numbers. It turns out that Delannoy matrix, Pascal matrix, and Fibonacci matrix are all special cases of the generalized Delannoy matrices, meanwhile Schröder matrix and Catalan matrix also ...

Tópico(s): graph theory and CDMA systems

2013 - Elsevier BV | Linear Algebra and its Applications

Artigo

Alain Giani, J. Bougnot, F. PascalDelannoy, G. Bougnot, J. Kaoukab, Guy-Germain Allogho, M. Bow,

Abstract The growth in the miscibility gap and the characterization of MOVPE Ga1−xInxAsySb1−y quaternary layers have been undertaken. The experimental conditions have been determined to obtain quaternary epilayers in the miscibility gap grown on GaSb with a good morphology even for lattice mismatched layers, in varying ΣPIII and DH2. The material quality has been assessed by single and double X-ray diffraction. The spectral responses of GaInAsSb(p)/GaSb(n) heterojunction are given. A spectral response ...

Tópico(s): Semiconductor Lasers and Optical Devices

1991 - Elsevier BV | Materials Science and Engineering B

Artigo Revisado por pares

F. PascalDelannoy, J. Bougnot, Guy-Germain Allogho, Alain Giani, L. Gouskov, G. Bougnot,

Photodiodes with a long-wavelength cutoff extending out to 2.9 μm have been fabricated from MOVPE-grown Ga0 6In0.4Sb homojunctions. These mesa devices without any passivation or antireflecting coating exhibit a peak efficiency as high as 43% at 2.60 μm.

Tópico(s): Semiconductor Quantum Structures and Devices

1992 - Institution of Engineering and Technology | Electronics Letters

Artigo

Roger Ondo-Ndong, F. PascalDelannoy, Alexandre Boyer, Alain Giani, A. Foucaran,

ZnO thin films were deposited on sapphire, glass and silicon substrates by r.f. magnetron sputtering using metallic zinc target. A systematic study has been made of the influence of substrate temperature on the film structural properties. They exhibited a c-axis orientation of below 0.5° full width at half maximum of X-ray rocking curves, an extremely high resistivity of 1010 Ω cm and an energy gap of 3.3 eV at room temperature. It was found that a substrate temperature of 100 °C and target/substrate ...

Tópico(s): Gas Sensing Nanomaterials and Sensors

2002 - Elsevier BV | Materials Science and Engineering B

Artigo Revisado por pares

Alain Giani, A. Al Bayaz, A. Foucaran, F. PascalDelannoy, Alexandre Boyer,

For the first time, Bi2Se3 thin films were elaborated by metalorganic chemical vapour deposition (MOCVD) using trimethylbismuth (TMBi) and diethylselenium (DESe) as metalorganic sources. The MOCVD elaboration of Bi2Se3 was carried out in a horizontal reactor for a substrate temperature (Tg) varying from 450°C to 500°C, a total hydrogen flow rate DT=3 l min−1, RVI/V ratio >14 and TMBi partial pressure lower than 1.10−4 atm. By X-ray diffraction and SEM observation, we noticed the polycrystalline structure ...

Tópico(s): Heusler alloys: electronic and magnetic properties

2002 - Elsevier BV | Journal of Crystal Growth

Artigo Revisado por pares

A. Al Bayaz, Alain Giani, M.C. Artaud, A. Foucaran, F. PascalDelannoy, Alexandre Boyer,

Bi2Se3 thin films were grown by metal organic chemical vapour deposition (MOCVD) on pyrex substrate in an horizontal reactor using Trimethylbismuth (TMBi) and Diethylselinium (DESe) as metal-organic sources. The effect of the growth parameters such as substrate temperature, Tg, and TMBi partial pressure, PTMBi, on the structural, electrical and thermoelectrical properties of Bi2Se3 films, has been investigated. We noticed that a high growth temperature is very important for a good orientation of crystallites, ...

Tópico(s): Advanced Thermodynamics and Statistical Mechanics

2002 - Elsevier BV | Journal of Crystal Growth

Artigo Revisado por pares

Brice Sorli, F. PascalDelannoy, Alain Giani, A. Foucaran, A. Boyer,

In this work an original humidity sensor is described. It is based on the cooled mirror principle with optical detection. The sensor is composed of a reflective sensor and a Peltier module. The thermoelectric cooling allows to reach the dew point and to evaporate the condensate water. The response of the reflective sensor placed opposite to the mirror follows the appearance and evaporation of water condensate mass. The integral of the optical signal variation is proportional to the percentage of ...

Tópico(s): Photonic and Optical Devices

2002 - Elsevier BV | Sensors and Actuators A Physical

Artigo Revisado por pares

F. Mailly, A. Martínez, Alain Giani, F. Pascal-Delannoy, Alexandre Boyer,

This paper describes the effect of gas pressure on the sensitivity of a micromachined thermal accelerometer. The sensor principle is as follows: a heating resistor creates a symmetrical temperature profile; two temperature detectors, placed symmetrically on both sides of the heater, measure a differential temperature. When an acceleration is applied on the sensitive axis x of the sensor, the convection heat transfer and the temperature profile become asymmetric and the differential temperature was ...

Tópico(s): Advanced Sensor Technologies Research

2003 - Elsevier BV | Sensors and Actuators A Physical

Artigo Revisado por pares

A. Al Bayaz, Alain Giani, A. Foucaran, F. PascalDelannoy, A. Boyer,

Bi2Se3 thin films were deposited by metal organic chemical vapour deposition using trimethylbismuth (TMBi) and diethylselenium (DESe) as metal organic sources. Structural properties, electric and thermoelectric results are studied as functions of VI/V ratio (VI/V ratio=DESe partial pressure/TMBi partial pressure). These films always displayed n-type conduction for a VI/V ratio between 14 and 35. The Seebeck coefficient and the carrier concentration vary slightly with the VI/V ratio: −108 to −120 μV/K ...

Tópico(s): Phase-change materials and chalcogenides

2003 - Elsevier BV | Thin Solid Films

Artigo Revisado por pares

A. Aardvark, Guy-Germain Allogho, G. Bougnot, J.P.R. David, Alain Giani, S. K. Haywood, G. Hill, P. C. Klipstein, F. Mansoor, N. J. Mason, R. J. Nicholas, F. PascalDelannoy, M.A. Pate, Lalitha Ponnampalam, P.J. Walker,

The growth, by MOVPE, of a range of antimonide-based material systems suitable for providing devices responsive to 2-4 mu m wavelength radiation is reported. Photodetectors with external quantum efficiencies of 60% at 2.2 mu m have been fabricated from an InGaSb homojunction. In order to examine the possibility of tuning the wavelength of emission or detection by using a strained single quantum well (SSQW) of InGaSb/GaSb this has been grown in the depletion region of a GaSb homojunction. These novel ...

Tópico(s): Semiconductor materials and interfaces

1993 - IOP Publishing | Semiconductor Science and Technology

Artigo Revisado por pares

G. Ferblantier, F. Mailly, R. Al Asmar, A. Foucaran, F. PascalDelannoy,

High quality piezoelectric zinc oxide (ZnO) thin films were deposited on (1 0 0)-oriented silicon substrate by reactive rf magnetron sputtering for bulk acoustic wave resonator. In order to improve the ZnO thin films quality, structural and electrical characteristics have been compared before and after annealing in helium (He) by X-ray diffraction and reflection coefficient S11 measurements. Scanning electron microscopy (SEM) was used to study the crystallographic structure. A previous study has shown ...

Tópico(s): Mechanical and Optical Resonators

2005 - Elsevier BV | Sensors and Actuators A Physical

Artigo Revisado por pares

F. PascalDelannoy, Brice Sorli, Alexandre Boyer,

This paper describes an application of Quartz Crystal Microbalance (QCM) used as humidity sensor. Moisture apparition is detected by using a QCM associated with a Peltier module. When water condensation produced by the Peltier cooling appears on the QCM, a change of mass on the crystal sensitive surface results in the decrease of the resonant frequency. If we measure the delay time between the beginning of Peltier supply and the apparition of water condensation on the quartz, we determine the relative ...

Tópico(s): Advanced MEMS and NEMS Technologies

2000 - Elsevier BV | Sensors and Actuators A Physical

Artigo Revisado por pares

A. Foucaran, B. Sorli, M. Garcia, F. PascalDelannoy, Alain Giani, A. Boyer,

In this work, an original humidity sensor is described. It is based on the study of the capacitance variation of a porous silicon layer (PSL) during water condensation induced by a commercial small-size thermoelectric cooler (TEC). The measurement principle is to detect the weak increase of capacitance created when water condensation occurs in a PSL stuck on a TEC. This important variation of capacitance is related to the high difference between the dielectric constant of PS (εr<12) and water (εr≅80). ...

Tópico(s): Thermal properties of materials

2000 - Elsevier BV | Sensors and Actuators A Physical

Artigo Revisado por pares

B. Aboulfarah, A. Mzerd, Alain Giani, Abdellah Boulouz, F. PascalDelannoy, A. Foucaran, A. Boyer,

Abstract The effects of VI/V ratio on electrical and thermoelectrical properties of p-type (Bi 1− x Sb x ) 2 Te 3 elaborated by metal-organic chemical vapour deposition (MOCVD) in horizontal quartz reactor are discussed. The deposited layers exhibit a polycrystalline structure and an improvement in the intensity is observed with increasing the VI/V ratio. The quality of the layers is measured by means of the Energy dispersive X-ray (EDX) microanalyser and scanning electron microscopy (SEM). It is observed ...

Tópico(s): Chalcogenide Semiconductor Thin Films

2000 - Elsevier BV | Materials Chemistry and Physics

Artigo Revisado por pares

Alain Giani, Jean Podlecki, F. PascalDelannoy, G. Bougnot, L. Gouskov, C. Catinaud,

We study the growth of InAs0.91Sb0.09 lattice matched on GaSb presenting a bandgap of 0.29 eV (4.2 μm) at 300 K. The layers are grown on (100) GaSb and GaAs substrates at atmospheric pressure in a vertical reactor MOVPE (metal organic vapor phase epitaxy) system using trimethylindium (TMIn), trimethylantimony (TMSb) and arsine (AsH3). We report the results on growth rate and InSb incorporation versus growth parameters as temperature and TMSb partial pressure for different VIII ratios. Carrier density ...

Tópico(s): Nanowire Synthesis and Applications

1995 - Elsevier BV | Journal of Crystal Growth

Artigo Revisado por pares

Abdellah Boulouz, Saptarshi Chakraborty, Alain Giani, F. Pascal Delannoy, Alexandre Boyer, J. Schumann,

Thin semiconducting thermoelectric films with narrow energy band gaps are considered to be very promising for future microdevice applications (sensors and generators). The polycrystalline BiSbTe alloys (V–VI semiconductors) are examples. In this report, the detailed temperature dependence of electrical resistivity [ρ(T)], n- and p-type carrier concentration [n(T) and p(T)], and Hall mobility [μ(T)] of n-type Bi2Te3, p-type Sb2Te3, and p-type (Bi1−xSbx)2Te3 (x=0.73 and 0.77) alloy films prepared by metalorganic ...

Tópico(s): Thermal properties of materials

2001 - American Institute of Physics | Journal of Applied Physics

Artigo Revisado por pares

F. Mailly, Alain Giani, R. Bonnot, Pierre Temple‐Boyer, F. PascalDelannoy, A. Foucaran, A. Boyer,

The techniques of micromachining silicon are used for the manufacture of an anemometer with low electric consumption and great sensitivity. To reduce the energy consumption, a suspended membrane of silicon rich silicon nitride SiNx makes it possible to carry out the heat insulation between the heater and the substrate. Platinum (Pt) thin film (3000 Å) with titanium (300 Å) adhesion layer on SiNx/Si substrate is used for the hot resistor. Among the methods of Pt deposition tested, electron beam evaporation ...

Tópico(s): Mechanical and Optical Resonators

2001 - Elsevier BV | Sensors and Actuators A Physical

Artigo Revisado por pares

A. Foucaran, F. PascalDelannoy, Alain Giani, A. Sackda, P. Combette, A. Boyer,

In this communication we report on the elaboration of porous silicon layers for gas sensor applications. We describe our test system for gas sensors, and we investigate the electric characteristics of porous silicon layers (p type) under different gases and levels of humidity. © 1997 Elsevier Science S.A.

Tópico(s): Semiconductor materials and devices

1997 - Elsevier BV | Thin Solid Films

Artigo Revisado por pares

Alain Giani, F. PascalDelannoy, Alexandre Boyer, A. Foucaran, M. Gschwind, P. Ancey,

Bi2Te3 layers were elaborated for the first time using metal organic chemical vapor deposition. The films composition is stoichiometric when the following conditions are verified: substrate temperature lower than 500 °C, VI/V ratio greater than 3, TMBi partial pressure lower than 2 × 10−4 atm. By X-ray diffraction and MEB observation, we noticed the polycrystalline structure of the layers. The high thermoelectric power (+ 190 V K−1 for the n-type layer and −94 V K−1 for the n-type layer) of this material ...

Tópico(s): Cold Atom Physics and Bose-Einstein Condensates

1997 - Elsevier BV | Thin Solid Films

Artigo

A. Foucaran, A. Sackda, Alain Giani, F. PascalDelannoy, Alexandre Boyer,

(Bi2Te3)0.9(Bi2Se3)0.1 for N-type material powder and (Bi2Te3)0.25(Sb2Te3)0.75 for P-type material powder were evaporated by a flash evaporation technique. We obtained a value of Z equal to 0.21×10−4 K−1 for α=40 μV K−1 and ρ=50 μΩ·m for P-type material and Z of about 0.17×10−3 K−1 for α=90 μV K−1 and ρ=30 μΩ·m for N-type material (at 300 K), for 1 μm layer thickness deposited over polyimide substrate, before annealing. We show that after annealing at 250°C under He atmosphere, the figure of merit ...

Tópico(s): Semiconductor materials and devices

1998 - Elsevier BV | Materials Science and Engineering B

Artigo Revisado por pares

Alain Giani, Abdellah Boulouz, F. PascalDelannoy, A. Foucaran, Alexandre Boyer,

The growth of Bi2Te3 thin films by metal organic chemical vapour deposition (MOCVD) using diethytellurium and trimethylbismuth as tellurium and bismuth sources respectively is investigated on pyrex substrates. The results of growth rate, morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The prepared films were always n-type. Film properties, such as electrical resistivity, mobility, carrier concentration, thermoelectric power and X-ray diffraction ...

Tópico(s): Physics of Superconductivity and Magnetism

1998 - Elsevier BV | Thin Solid Films

Artigo Revisado por pares

Abdellah Boulouz, Alain Giani, F. PascalDelannoy, M. Boulouz, A. Foucaran, Alexandre Boyer,

The thermoelectric, electric and structural properties of Bi2Te3 thin films grown by MOCVD have been investigated. The Seebeck coefficient shows that all the samples were n-type conductors decreasing from 213 to 129 μV/K when the carrier concentration increases from 9×1019 to 3×1020 cm−3. For high substrate temperature, good orientation of crystallites has been observed which can be directly related to the best values of Seebeck coefficient found. Hall effect has been studied in the temperature ...

Tópico(s): Physics of Superconductivity and Magnetism

1998 - Elsevier BV | Journal of Crystal Growth

Artigo

Alain Giani, Abdellah Boulouz, F. PascalDelannoy, A. Foucaran, E. Charles, Alexandre Boyer,

Metal organic chemical vapor deposition (MOCVD) has been investigated for elaboration of Bi2Te3 and Sb2Te3 using TMBi (Trimethylbismuth), TESb (Triethylantimony) and DETe (Diethyltellurium) as metal–organic sources. Their thermoelectric and physical properties were studied versus growth conditions. The MOCVD elaboration of Bi2Te3 and Sb2Te3 was carried out in an horizontal reactor for a temperature varying from 400 to 500°C, a total hydrogen flow rate DT varying from 3 to 6 l mm−1 and (RVI/V) ratio ranging ...

Tópico(s): Thermodynamic and Structural Properties of Metals and Alloys

1999 - Elsevier BV | Materials Science and Engineering B

Artigo Revisado por pares

Alain Giani, Abdellah Boulouz, B. Aboulfarah, F. PascalDelannoy, A. Foucaran, A. Boyer, A. Mzerd,

The electrical and thermoelectrical performances of p-type (Bi1−xSbx)2Te3 elaborated by metal organic chemical vapour deposition (MOCVD) in horizontal quartz reactor on pyrex substrate are discussed. The quality of the deposition layers is controlled by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). Hall effect measurements are used to determine resistivity and holes mobility. It is found that the electrical properties of thin films depend strongly ...

Tópico(s): Advanced Thermodynamics and Statistical Mechanics

1999 - Elsevier BV | Journal of Crystal Growth

Artigo Revisado por pares

Alain Giani, Abdellah Boulouz, F. PascalDelannoy, A. Foucaran, Alexandre Boyer, B. Aboulfarah, A. Mzerd,

Tópico(s): Advanced Semiconductor Detectors and Materials

1999 - Springer Science+Business Media | Journal of Materials Science Letters

Artigo Revisado por pares

L. Nougaret, P. Combette, F. PascalDelannoy,

LiTaO3 thin films were deposited by radio-frequency magnetron sputtering with a Li enriched target composed of Li2O2/Ta2O5 (55:45 at.%). Morphology, crystallinity, dielectric and pyrolectric properties of thin films of LiTaO3 are studied according to the temperature of deposition and the nature of the back electrode (Ru/RuO2 and RuO2). In order to develop thermal microsensors containing pyrolectric thin layers deposited on membranes of SiNx ensuring the thermal isolation of the device, the final aim ...

Tópico(s): Photorefractive and Nonlinear Optics

2008 - Elsevier BV | Thin Solid Films

Artigo Revisado por pares

P. Combette, L. Nougaret, Alain Giani, Frédérique Pascal-delannoy,

Lithium tantalate (LiTaO3) thin films were deposited on ruthenium dioxide (RuO2) electrode by reactive radio frequency (RF) magnetron sputtering with a lithium dioxide–tantalum pentoxide (Li2O2/Ta2O5) (50–50% mole ratio) target. This article presents morphological, structural, dielectric and pyroelectric studies of LiTaO3 thin films as function of growth conditions (RF power, gas pressure and temperature). The final aim is to improve the pyroelectric coefficient for thermal detectors applications. The ...

Tópico(s): Ferroelectric and Piezoelectric Materials

2007 - Elsevier BV | Journal of Crystal Growth