I.C. Kizilyalli, G. C. Abeln, Zhelin Chen, J. Lee, Gary R. Weber, Bernhard Kotzias, S. Chetlur, Joseph W. Lyding, K. Hess,
... experimental findings critical for process integration of deuterium post-metal anneals to improve channel hot carrier reliability in ... instead of hydrogen is introduced via an optimized post-metal anneal process to achieve a 50-100 fold ... deuterium anneal are still observed even if the post-metal anneal is followed by the final SiN cap ... passivation process. It is concluded that the deuterium post-metal anneal process is suitable for manufacturing high performance ...
Tópico(s): Silicon and Solar Cell Technologies
1998 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Somenath Chatterjee, Yue Kuo, J.X. Lu,
... thicknesses, e.g., 2.5–10 nm, and post-metal annealing (PMA) temperatures, e.g., 600 °C to ... electrode was dependent on the material and the post-metal annealing (PMA) temperature. The scanning transmission electron microscopy ... metal nitride gate electrode material but also the post-metal annealing condition as well as the film thickness. ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2007 - Elsevier BV | Microelectronic Engineering
Pei-Chuen Jiang, Jen‐Sue Chen,
... properties of metal oxide semiconductor (MOS) capacitors upon post-metal annealing in or ambient at 400-600°C ... the MOS capacitors are similar before and after post-metal annealing. C-V hysteresis measurements showed that charges ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2004 - Institute of Physics | Journal of The Electrochemical Society
Tarun Mudgal, Nathaniel Walsh, Robert G. Manley, Karl D. Hirschman,
... electrodes. Annealing was performed either pre-metal or post-metal deposition, in various gas ambient conditions including air, ... on Mo-contact and Al-contact devices. A post-metal anneal for Mo-contact devices resulted in higher ... for controlling the electronic properties of IGZO. A post-metal anneal at 400°C in N2 followed by ...
Tópico(s): Silicon and Solar Cell Technologies
2014 - Institute of Physics | ECS Journal of Solid State Science and Technology
Tarun Mudgal, Nathaniel Walsh, Robert G. Manley, Karl D. Hirschman,
... electrodes. Annealing was performed either pre-metal or post-metal deposition, in various gas ambients including air, oxygen, ... on Mo-contact and Al-contact devices. A post-metal anneal for Mo-contact devices resulted in higher ... formation of an AlO x interface layer. A post-metal anneal at 400 °C in N 2 followed ...
Tópico(s): Nanowire Synthesis and Applications
2014 - Institute of Physics | ECS Transactions
... based MOSFETs. The MWI technique is used for post-metal annealing (PMA) in air ambient, and compared with ... time, low temperature, vacuum-free alternative to conventional post-metal annealing methods, but it also allows much lower ...
Tópico(s): Semiconductor materials and interfaces
2017 - Elsevier BV | Microelectronics Reliability
Jiabo Chen, Zhaoke Bian, Zhihong liu, Dan Zhu, Xiaoling Duan, Yinhe Wu, Yanqing Jia, Jing Ning, Jincheng Zhang, Yue Hao,
... Mo/Au Schottky contacts on n-GaN with post metal annealing at 300, 500 and 700 °C have ... with as-deposited Mo/Au, the one with post metal annealing at 300 °C, the one annealed 500 ° ... current and the breakdown voltage were achieved after post metal annealing at 500 °C. Transmission Electron Microscopy (TEM) ...
Tópico(s): GaN-based semiconductor devices and materials
2020 - Elsevier BV | Journal of Alloys and Compounds
... Si structure change systematically with time lapse between post-metal-anneal treatment and x-ray irradiation, and strong ...
Tópico(s): Semiconductor materials and interfaces
1984 - American Institute of Physics | Applied Physics Letters
S.C. Vitkavage, E. A. Irene, Hisham Z. Massoud,
... 1100 °C range, with and without hydrogen-containing post-metal anneals, and for processing within and without a ... in non-cleanroom processing and the lack of post-metal annealing can either obscure or enhance some trends. ...
Tópico(s): Semiconductor materials and interfaces
1990 - American Institute of Physics | Journal of Applied Physics
Jong‐Il Kim, Kang Sup Shin, Kye Hyun Baek, Dal Jin Lee, Kil Ho Kim, Chung Ho Hwang, Dae Hoon Lee,
... species on charging induced tungsten plug corrosion during post metal etch process have been investigated. It was found ...
Tópico(s): Hydrogen embrittlement and corrosion behaviors in metals
2002 - Institute of Physics | Japanese Journal of Applied Physics
Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Frederick Chen, Ming‐Jinn Tsai,
... electrodes are studied in this work. After appropriate post metal annealing (PMA), the reactive metal layer with high ...
Tópico(s): Electronic and Structural Properties of Oxides
2010 - Institute of Physics | Japanese Journal of Applied Physics
Somenath Chatterjee, Yue Kuo, J.X. Lu, J.-Y. Tewg, P. Majhi,
... verify the processing condition effects (film thicknesses and post metal annealing temperatures) on times to breakdown. The leakage current characteristics are improved with post metal annealing temperatures (PMA) for both 2.5 and ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2005 - Elsevier BV | Microelectronics Reliability
Pengfei Guo, Genquan Han, Xiao Gong, Bin Liu, Yue Yang, Wei Wang, Qian Zhou, Jisheng Pan, Zheng Zhang, Eng Soon Tok, Yee‐Chia Yeo,
... the gate dielectric. In addition, the effects of post metal annealing (PMA) were investigated. It was observed that ...
Tópico(s): Nanowire Synthesis and Applications
2013 - American Institute of Physics | Journal of Applied Physics
I.C. Kizilyalli, Joseph W. Lyding, K. Hess,
... dynamics and resultant damage. Therefore, deuterium and hydrogen post-metal anneal processes are compatible with each other in ...
Tópico(s): Ion-surface interactions and analysis
1997 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Kai-Chi Chuang, Kuan‐Yu Lin, Jun-Dao Luo, Wei-Shuo Li, Yi-Shao Li, Chi-Yan Chu, Huang-Chung Cheng,
Post-metal annealing (PMA) has been adopted to reduce the operation voltages of HfOx-based resistive random access ...
Tópico(s): Electronic and Structural Properties of Oxides
2017 - Institute of Physics | Japanese Journal of Applied Physics
Bing‐Yue Tsui, Jung-Chien Cheng, Cheng-Tyng Yen, Chawn-Ying Lee,
... graphitization was observed in the amorphous layer after post-metal deposition (PMD) annealing. This interfacial layer strongly pinned ...
Tópico(s): Thin-Film Transistor Technologies
2017 - Elsevier BV | Solid-State Electronics
Shih-Han Yi, Kuei‐Shu Chang‐Liao, Tzung-Yu Wu, Chia‐Wei Hsu, Jiayi Huang,
... Hf-cap/GeO x gate stack with suitable post-metal-annealing (PMA) treatments. Such a high mobility in ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2017 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Amit Bhoil, Hendrick Caw, Sobhan Vinjamuri,
... contribute to surgical decision making for possible osteomyelitis post-metal implant surgery. In this article, we present a ... in a few diverse clinical settings related to post-metal implant osteomyelitis.
Tópico(s): Hematological disorders and diagnostics
2019 - Lippincott Williams & Wilkins | Nuclear Medicine Communications
Shen‐Yang Lee, Hanwei Chen, Chiuan-Huei Shen, Po‐Yi Kuo, Chun-Chih Chung, Yu-En Huang, Hsin-Yu Chen, Tien‐Sheng Chao,
... of the orthorhombic phase (o-phase) before further post-metal annealing (PMA).
Tópico(s): MXene and MAX Phase Materials
2019 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Md. Mamunur Rahman, Dae-Hyun Kim, Tae‐Woo Kim,
... an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed ...
Tópico(s): Advancements in Semiconductor Devices and Circuit Design
2020 - Multidisciplinary Digital Publishing Institute | Nanomaterials
Ryun‐Han Koo, Wonjun Shin, Kyung Kyu Min, Dongseok Kwon, Jae‐Joon Kim, Daewoong Kwon, Jong‐Ho Lee,
We investigate the effect of post-metal annealing temperature ( ${T}_{\text {PMA}}$ ) on ferroelectric (FE) resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through ...
Tópico(s): Ferroelectric and Piezoelectric Materials
2023 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Jae-Sub Oh, Hyeong-Sub Song, Jongcheol Park, Jong‐Kwon Lee,
... uncooled microbolometers. In this work, we applied the post-metal annealing (PMA) process under the condition of deuterium ...
Tópico(s): Calibration and Measurement Techniques
2021 - Multidisciplinary Digital Publishing Institute | Sensors
Jagna Chmielowska-Bąk, Joanna Deckert,
... in natural conditions, plants may be subjected to post-metal-stress conditions. The review also discusses the mechanism behind efficient recovery and the impact of post metal stress on future plant performance-possible acquisition of ...
Tópico(s): Silicon Effects in Agriculture
2021 - Multidisciplinary Digital Publishing Institute | Plants
Jun-Young Park, Tae Jin Yoo, Ji‐Man Yu, Byoung Hun Lee, Yang‐Kyu Choi,
... curing characteristics depend on the device state after post-metal annealing, but no conclusive evidence has been found ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2020 - Institute of Electrical and Electronics Engineers | IEEE Electron Device Letters
Hyun-Dong Song, Hyeong-Sub Song, Sunil Babu Eadi, Hyun-Woong Choi, Hyun-Jin Shin, Jae Woo Lee, Ji‐Woon Yang, Hi‐Deok Lee,
... of tunneling field-effect transistors (TFETs). Among these, post metal annealing (PMA) can induce enhanced device performance, but ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2020 - Institute of Physics | Japanese Journal of Applied Physics
Yu-Tseng Chu, Meng‐Hung Tsai, Cheng-Liang Huang,
... of Ar/O 2 ratio, film thickness and post metal annealing (PMA) condition on the resistive switching (RS) ... the resistive switching characteristics can be improved by post metal annealing treatment due to film densification and the ...
Tópico(s): Ferroelectric and Negative Capacitance Devices
2021 - Elsevier BV | Materials Science and Engineering B
... a two-step annealing method. The influence of post-metal annealing (PMA) temperatures on the electrical performance and ... is also improved. In all, In2O3 TFT with post-metal annealing temperature of 350°С exhibits the best ...
Tópico(s): Silicon and Solar Cell Technologies
2021 - Elsevier BV | Current Applied Physics
J. L. Lewis, Michael J. Askew, D P Jaycox,
... condylar components. Of the designs considered, a single-post, metal-backed design provided the lowest system stresses over- ...
Tópico(s): Knee injuries and reconstruction techniques
1982 - Wolters Kluwer | Journal of Bone and Joint Surgery
... samples, and among the dry oxide samples, the post-metal-anneal (PMA) treatment results in an appreciable reduction ...
Tópico(s): Ion-surface interactions and analysis
1983 - American Institute of Physics | Applied Physics Letters
... density of radiation-induced interface traps in a post-metal-annealed (PMA) Al-gate metal-oxide-semiconductor (metal/ ...
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
1983 - American Institute of Physics | Applied Physics Letters