Barrie Linley, Albert Koehl, Rosa-Tom Druckporter, Adrian Bird, Richard Lydiker, Stephen Mulroney, Richard Feachem,
... Fighting Newts Was Kilroy Here? Antarctica Sick, sick, sic The World In B Flat Classical music On The Map Rock music Say It Again, Sam Famous quotations Classical, radical Architecture The Economist Prize Crossword Knightsbridge Service Apartments ...
1989 - Gale Group | The Economist
J. Cernicharo, C. A. Gottlieb, M. Guélin, P. Thaddeus, J. M. Vrtilek,
... NASA/ADS Astronomical and Laboratory Detection of the SiC Radical Cernicharo, J. ; Gottlieb, C. A. ; Guelin, M. ; Thaddeus, ... previously unobserved 3Pi electronic ground state of the SiC radical are discussed. Laboratory-derived frequencies, accurate to better ... the SiC ground state. It is found that SiC is appreciably extended toward IRC+10216, with a diameter of at least 54 arcsec. Publication: The Astrophysical Journal Pub Date: June 1989 DOI: 10.1086/185449 Bibcode: 1989ApJ...341L..25C Keywords: Free Radicals; Interstellar Chemistry; Radio Astronomy; Silicon Carbides; Stellar Envelopes; ...
Tópico(s): Silicon Effects in Agriculture
1989 - IOP Publishing | The Astrophysical Journal
... for an alternative platform that called for more radical reform under the banner of the "Democratic League. ...
0000 - Gale Group | Sabin
Thomas J. Butenhoff, Eric A. Rohlfing,
... C 3Π–X 3Π band system of the SiC radical. Jet-cooled SiC is produced by a laser vaporization/pulsed beam ...
Tópico(s): Phase Equilibria and Thermodynamics
1991 - American Institute of Physics | The Journal of Chemical Physics
Charles F. Chandler, Chas. F. Thompson, Alice M. Adams, Chas. F. Thompson, Chas. Steele, Charles Kingsley, Howard Merton, Chas. F. Thompson, Sir Morell MacKenzie, Chas. F. Thompson, Francis G. Peabody, Oliver Wendell Holmes, Chas. F. Thompson, T. B. Aldrich, Mary Allen West, Clara Marcelle Greene, J. J. Pierson, Harvard Lampoon, Edith Miniter, Chas. F. Thompson, Chas. F. Thompson, Edward W. Bok, Louise Markscheffel, Chas. F. Thompson, Sir Thomas Browne, George Eliot, Chas. F. Thompson, Morell MacKenzie, Jean Paul Richter, Clark W. Bryan, Henry W. Longfellow, Milwaukee Wisconsin, William Black, Chas. F. Thompson, Arthur W. Pope,
... Going, Christmas, 1890, Zek'el Brown Unburdens Himself, Sic Passim, Magdalen, Woman's World, "Aprille". Frontmatter: Subscribe!!, ...
1890 - Gale Group | NCCO-STM 1of2
... bands were observed for the first time. The SiC radical was generated by a dc discharge in a flowing mixture of hexamethyl disilane [(CH3)6Si2] and He. A total of 1074 rotational transitions assigned to the 0–1, 0–0, and 1–0 bands have been combined in a simultaneous analysis with previously reported pure rotational data to determine the molecular constants for SiC in the two electronic states. The principal equilibrium ...
Tópico(s): Photochemistry and Electron Transfer Studies
2004 - Elsevier BV | Journal of Molecular Spectroscopy
Robert Nowell, Hala Jaber, Victoria McKee, Anthony Burgess, Barbara Hall, Robert Silver, Mike Graham, Robert Dawson Scott, Tony Hetherigton, Michelene Wandor, Sian Frances, Mary Dowey, John Davison, Jon Swain, John Peter, Malcolm Bardbury, Catherine Steven, Mark Reason, Norman MacRae, Brian Heap, Princess Royal, John Diamond, Neville Hodgkinson Medical Correspondent, Graham Rose, Roy Porter, Norman Howell, Diana Wright Personal Finance Editor, Carolyn Hart, Sally Payne, Linda Taylor, Charles Howe, Geoffrey Heptonstall, Freya Williams, Lynn Greenwood, Marten Julian, Mike Brearley, John O'Byrne, (Mrs) Pat Marston, Cal McCrystal, Mark Ellis, Mark Hosenball, Edward Welsh, Carol Sarler, Dave Webster, Caroline St John-Brooks, Geordie Greig, Patrick Stoddart, Susan Marling, Robert Sandall, Lis Leigh, David Brierley, Irwin Stelzer, Peter Godwin, Mark Ottaway, Geordie Greig Arts Correspondent, Allan Massie, Cliff Temple, Jane Bird, Robert Gore-Langton, Maria Laura Avignolo, Terence Roth, Egon Ronay, Sheila Sharp, Hugh Canning, Margarette Driscoll, David Cairns, Norman Harris, Julia Neuberger, Geoff Whitten, George Perry, Sue Mott, Rex Gooch, Robin Marlar, Charlotte Atkins, Sir Roy Strong, Paul Golding, Bernard Cafferty, M Dowsett, Jon Freeman, Stuart Wavell, Paul Donovan, Janette Marshall, Ian Birrell John Davison, Tim Ross, Amit Roy, Jeff Randall, Jonathan Sale, Mark Ackerman, James Adams, Paul Driver, Boris Schapiro, C Mitchell, David Hughes, Austin MacCurtain, David Leppard, Gerald Hartup, Peter Fisher Chairman, Warren Stutely, C Dicker, Joan Forman, Rufus Olins, Elizabeth Grice, Michael Durham, John Hopkins, Brian Walden, Geoffrey Moorhouse, Mary Sue Davis, John Powell, Peter Wilsher, Gill Charlton, Gareth David, F W Millar, Stephen Pile, Brian Masters, Cheryl Taylor, Marie Colvin, Craig Brown, Diana Wright, Andrew Lorenz Industrial Editor, Kenneth Branagh, Stephen Jones, Brian Deer, Meriel McCooey, Norman Lebrecht, Martin Searby, Bob Rodwell, Safa Haeri, Dilys Powell, Edmund Hall, Rita Lewis, Alison Beckett, Tony Rocca, David Selbourne, Roger Bootle, Richard Woods, Caroline McGhie, Peter Johnson, Mira Bar-Hillel, Marion Hume, Maurice Chittenden, Zoe McKintyre, Joy Melville, Ray Mgadzah, David Hughes Chief Political Correspondent, Tom Adair, Brian MacArthur, David Baldwin, Michael Faraday, Geoffrey Hobbs, D J Taylor, Donald Cameron Watt, Mihir Bose, Stanley Wells Director, Philip Beresford, Godfrey Smith, Charles Oulton, Valerie Eillot, Eden Vale, Brian Glanville, Jeffrey Robinson, Susie Hamilton, Andrew Hogg Nairobi, Chris Dighton, Nadine Meisner, Edward Pearce, Simon Jenkins, Godfrey Golzen, Ronald Gill, Michael Berger, Gareth David Deputy City Editor, Andrew Lorenz, Sue Maw, John Furbisher, Liam Clarke, Duncan Bryson, David Wickers, J H Martin, David Powell, Marina Vaizey, Hugh Pearman, Jeff Randall City Editor, Richard Caseby, Margaret Park, Penny Perrick, Wayne Sleep, Chris Blackhurst, Mark Burton, Clement Freud, Tom Bower, James Adams Defence Correspondent, Hilary Bristow, Muriel Bowen,
... E Inbucon Executive Resourcing Project Manager ICL an Sic Company GHN the Personal Development Consultants Guidance for ... offers care with dignity for the aged A radical new retirement concept is set to catch on ...
1989 - Gale Group | Sunday Times HA GDA
Anup Pramanik, Kalyan Kumar Das,
... of the low-lying electronic states of the SiC radical have been determined from the ab initio based ...
Tópico(s): Advanced Chemical Physics Studies
2007 - Elsevier BV | Journal of Molecular Spectroscopy
Martin Wienkoop, Petra Mürtz, Peter-Christoph Schumann, Martina Havenith, W. Urban,
... the electronic ground state X 3Π of the SiC radical have been observed with high accuracy using CO2- ...
Tópico(s): Electron Spin Resonance Studies
1997 - Elsevier BV | Chemical Physics
... role in the recently reported synthesis of the SiC radical in COSiH4 discharges and in interstellar space, ...
Tópico(s): Advanced Chemical Physics Studies
1990 - Elsevier BV | International Journal of Mass Spectrometry and Ion Processes
R. Mollaaghababa, C. A. Gottlieb, P. Thaddeus,
... millimeter-wave rotational spectrum of the free 29SiC radical in the X3Π ground state, produced in a low-pressure glow discharge through SiH4 and CO, was detected with the same reactive-molecule spectrometer used earlier to detect SiC and Si13C. Eleven rotational transitions, all but two ...
Tópico(s): Molecular Spectroscopy and Structure
1993 - American Institute of Physics | The Journal of Chemical Physics
Zhengwei Shui, Chun‐Sheng Jia,
Tópico(s): Nonlinear Photonic Systems
2016 - Springer Science+Business Media | The European Physical Journal Plus
Chun‐Sheng Jia, Zhengwei Shui,
Tópico(s): Advanced Chemical Physics Studies
2015 - Springer Science+Business Media | The European Physical Journal A
Chun‐Sheng Jia, Jian-Wei Dai, Liehui Zhang, Jianyi Liu, Guangdong Zhang,
... 7Li2 molecule and the X3Π state of the SiC radical increase as D increases. We observe that the ...
Tópico(s): Nonlinear Photonic Systems
2014 - Elsevier BV | Chemical Physics Letters
Chun‐Sheng Jia, Liehui Zhang, Xuetao Hu, Hongming Tang, Guangchuan Liang,
... 7Li2 molecule and the X3Π state of the SiC radical are observed to increase as D increases in ...
Tópico(s): Quantum chaos and dynamical systems
2014 - Elsevier BV | Journal of Molecular Spectroscopy
Hongming Tang, Guangchuan Liang, Liehui Zhang, Feng Zhao, Chun‐Sheng Jia,
... and the X 3 Π state of the SiC radical are in better agreement with the Rydberg−Klein− ...
Tópico(s): Molecular Spectroscopy and Structure
2014 - NRC Research Press | Canadian Journal of Chemistry
Deheng Shi, Wei Xing, Jinfeng Sun, Zhou Zhu,
Tópico(s): Photochemistry and Electron Transfer Studies
2012 - Springer Science+Business Media | The European Physical Journal D
C. R. Brazier, L. C. O’Brien, P. F. Bernath,
The 0–0 band of the A 3 Σ−–X 3 Π system of SiC, analogous to the Ballik–Ramsay system of C2, has been observed in emission near 4500 cm−1. The internuclear separations (r0 ) were found to be 1.813 56 and 1.721 87 Å for the A 3 Σ− and X 3 Π states, respectively.
Tópico(s): Porphyrin and Phthalocyanine Chemistry
1989 - American Institute of Physics | The Journal of Chemical Physics
Maarten Ebben, Marcel Drabbels, J. J. ter Meulen,
We report the first LIF spectrum of the SiC free radical. The SiC molecules are produced using pulsed-laser vaporization of ...
Tópico(s): Diamond and Carbon-based Materials Research
1991 - Elsevier BV | Chemical Physics Letters
The stellar spectrum of certain N type stars in the blue–green region has been observed in the laboratory in absorption using the flash discharge technique. It has been interpreted as a 1 Π ← 1 Σ transition of the linear Si–C–C molecule. A new vibrational analysis has been proposed, which yields the following fundamental frequencies in cm −1 . [Formula: see text] The 1 Π state shows a small Renner splitting (εω 2 = 3.3 cm −1 ). In addition, 001 and 040 levels are shown to perturb each other due to a Fermi resonance.
Tópico(s): Astro and Planetary Science
1974 - NRC Research Press | Canadian Journal of Physics
Hiroshi Ito, Takuya Kuwahara, Kentaro Kawaguchi, Yuji Higuchi, Nobuki Ozawa, Momoji Kubo,
... C-C bonds are generated. We also simulated SiC etching with SF3 radicals. Although the chemical reaction dynamics are similar to ... addition on the etching mechanism, we also simulated SiC etching with SF5 and O radicals/atoms. After bombardment with SF5 radicals, Si-C bonds dissociate in a similar way to the etching without O atoms. In addition, O atoms generate many C-O bonds and COy (y = 1-2) molecules, inhibiting the generation of C-C bonds. This indicates that O atom addition improves the removal of C atoms from SiC. However, for a high O concentration, many C- ...
Tópico(s): Silicon Carbide Semiconductor Technologies
2016 - Royal Society of Chemistry | Physical Chemistry Chemical Physics
Motoyuki Iijima, Hidehiro Kamiya,
... 3 and 11. It was deduced that modifying SiC nanoparticles with azo radical initiators is a significant method for tuning the surface properties of SiC nanoparticles.
Tópico(s): Anodic Oxide Films and Nanostructures
2008 - American Chemical Society | The Journal of Physical Chemistry C
Megumi Kayanuma, Tomohisa Kato, Tetsuya Morishita,
The reaction mechanisms of OH radicals on the C and Si faces of SiC were analyzed using density functional theory calculations to understand the difference in reactivity. For the first OH radical, it was shown ... the surface by oxidants such as the OH radical, is inefficient on the Si face of SiC.
Tópico(s): Advanced ceramic materials synthesis
2022 - Elsevier BV | Surface Science
Simon Klüpfel, P. Klüpfel, Hannes Jónsson,
... radical predicted by PBE is corrected by PZ-SIC. The \ce{CH3} radical is correctly predicted to be planar when complex orbitals are used, while it is non-planar when the PZ-SIC calculation is restricted to real orbitals.
Tópico(s): Photochemistry and Electron Transfer Studies
2012 - American Institute of Physics | The Journal of Chemical Physics
Yuusuke Maeyama, Hiroshi Yano, Y. Furumoto, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki,
... N) radical irradiation on SiO2/4H- and 6H-SiC interface properties were investigated. N radicals were irradiated to dry thermal oxides on SiC. X-ray photoelectron spectroscopy measurements revealed that N atoms were introduced into the SiO2/SiC interface with 1 at%. To evaluate the interface state density, high and low frequency capacitance - voltage characteristics were measured using n-type metal-oxide-semiconductor (MOS) structures. The interface state density was reduced by irradiation of N radicals. Thin oxides were found to be effective in ...
Tópico(s): Thin-Film Transistor Technologies
2003 - Institute of Physics | Japanese Journal of Applied Physics
Keita Yagi, Junji Murata, Akihisa Kubota, Yasuhisa Sano, Hideyuki Hara, Takeshi Okamoto, Kenta Arima, Hidekazu Mimura, Kazuto Yamauchi,
... environmentally friendly planarization technique for 4H‐silicon carbide (SiC) substrates. The method uses hydroxyl (OH) radicals generated from hydrogen peroxide (H 2 O 2 ) ...
Tópico(s): Silicon Carbide Semiconductor Technologies
2008 - Wiley | Surface and Interface Analysis
Keita Yagi, Junji Murata, Akihisa Kubota, Yasuhisa Sano, Hideyuki Hara, Kenta Arima, Takeshi Okamoto, Hidekazu Mimura, Kazuto Yamauchi,
... H2O2) solution. First, the oxidation of a 4H–SiC substrate by OH radicals is investigated by X-ray photoelectron spectroscopy (XPS) analysis. Next, the planarization of the 4H–SiC substrate is conducted. A very flat and smooth ...
Tópico(s): Advanced Surface Polishing Techniques
2008 - Institute of Physics | Japanese Journal of Applied Physics
Tomoaki Hatayama, Yoichiro Tarui, Takashi Fuyuki, Hiroyuki Matsunami,
... be controlled easily by the number of methyl radicals. In 3C-SiC homoepitaxial growth at 1000°C on a carbonized ... rate affected the surface morphology of the 3C-SiC epitaxial layer. At a typical flow rate of methyl radicals, the growth rate was kept constant, regardless of ...
Tópico(s): Thin-Film Transistor Technologies
1995 - Elsevier BV | Journal of Crystal Growth
Damian L. Kokkin, Neil J. Reilly, Ryan C. Fortenberry, T. Daniel Crawford, Michael McCarthy,
The gas-phase optical spectra of three silicon-terminated carbon chain radicals, SiCnH (n = 3 - 5), formed in a jet-cooled discharge of silane and acetylene, have been investigated by resonant two-color two-photon ionization and laser-induced fluorescence/dispersed fluorescence. Analysis of the spectra was facilitated by calculations performed using equation-of-motion coupled cluster methods. For SiC3H and SiC5H, the observed transitions are well-described as excitations from a (2)Π ground state to a ( ...
Tópico(s): Photochemistry and Electron Transfer Studies
2014 - American Institute of Physics | The Journal of Chemical Physics
Yunfei Zhang, Chunhui Zhang, Yufeng Liu, Dan Li, Jianhui Xu, Lei Li, Qi Wu, Jinhong Fan, Lu-ming Ma,
... specific surface area and electron transfer rate of SiC-Fe0. Both the radical and non-radical processes were involved in the SiC-Fe0/PMS system, in which 1O2 and •O2− ...
Tópico(s): Arsenic contamination and mitigation
2022 - Elsevier BV | Separation and Purification Technology