Limpar
207 resultados

Acesso aberto

Tipo do recurso

Ano de criação

Produção nacional

Revisado por pares

Áreas

Idioma

Editores

Artigo

N. F. Mott,

... of threshold switching in thin films of chalcogenide semicondutors. The predictions of the thermal mechanism are outlined, ...

Tópico(s): Solid-state spectroscopy and crystallography

1971 - Taylor & Francis | Philosophical magazine

Artigo Revisado por pares

Chak Wah Tang, A. C. Albrecht,

... to describe the contacts between metals and inorganic semicondutors. The remarkable difference in the two cells can ...

Tópico(s): Electrochemical Analysis and Applications

1975 - American Institute of Physics | The Journal of Chemical Physics

Artigo Revisado por pares

Masahiko Nishida,

... electrolyte junction is treated as a metal-insulator-semicondutor (MIS) structure with the metal and insulator replaced, ...

Tópico(s): TiO2 Photocatalysis and Solar Cells

1980 - American Institute of Physics | Journal of Applied Physics

Artigo Revisado por pares

B.E. Watts,

... thin films, with particular emphasis on material for semicondutor device applications. Epitaxial film deposition techniques are described ...

Tópico(s): ZnO doping and properties

1973 - Elsevier BV | Thin Solid Films

Artigo Revisado por pares

A. J. Willis, A.P. Botha,

... from which values of specific contact resistance and semicondutor sheet resistance (under contacts) can be found.

Tópico(s): Silicon and Solar Cell Technologies

1987 - Elsevier BV | Thin Solid Films

Artigo

Atsuo Iida, Kenji Sakurai, Yohichi Gohshi,

Summary The X-ray external total reflection was used for the x-ray fluorescence analysis of the near surface layer of a GaAs wafer and a GaAlAs epilayer. Synchrotron radiation was used as an excitation source. The intensity ratio between the Ga K and As K fluorescence signals was measured as a function of the glancing angle. The reduction of As atoms near the surface of less than a hundred Å was observed for the high temperature annealed GaAlAs epilayer.

Tópico(s): Surface and Thin Film Phenomena

1987 - International Centre for Diffraction Data | Advances in X-ray Analysis

Artigo

Gregory Gheen, Li‐Jen Cheng,

An updatable optical correlator which uses a photorefractive compound semiconductor to generate real-time matched filters is proposed. Using compound semiconductors offers high speed with low optical input intensities. Here we discuss issues affecting the performance of this correlator. This includes an analysis of the Bragg diffraction and a discussion of the speed and power considerations of these materials. Experimental results obtained using photorefractive GaAs are also presented.

Tópico(s): Advanced Fiber Laser Technologies

1988 - Optica Publishing Group | Applied Optics

Artigo Revisado por pares

Sumanta Das, G. S. Agarwal,

... logic gate operations with systems like ion traps, semicondutor quantum dots and atoms. We show that the ...

Tópico(s): Quantum and electron transport phenomena

2009 - IOP Publishing | Journal of Physics B Atomic Molecular and Optical Physics

Artigo Revisado por pares

Katrien De Vos, Jordi Gironès, Tom Claes, Yannick De Koninck, Stanislav Popelka, E. Schacht, Roel Baets, Peter Bienstman,

... microring resonators fabricated by standard complementary metal-oxide semicondutor (CMOS) technology.Parallel readout was performed with an ...

Tópico(s): Advanced Biosensing Techniques and Applications

2009 - Institute of Electrical and Electronics Engineers | IEEE photonics journal

Artigo Revisado por pares

R G Sparks, W S Enloe, M. A. Paesler,

... useful nondestructive technique for measuring residual stresses in semicondutors. The Raman microprobe is used to investigate the ...

Tópico(s): Integrated Circuits and Semiconductor Failure Analysis

1991 - Elsevier BV | Precision Engineering

Artigo Revisado por pares

H.H. Goossens, W. P. Gomes,

Abstract Wet etching processes at III–V semiconductors are studied both from the viewpoint of the reaction mechanisms and from that of the morphology of the etched surfaces. Emphasis is put on GaP single crystals, for which four different types of etching are considered, ie (photo)anodic, electroless, chemical and photoetching. Relations between etching kinetics, crystallographic orientation and etching morphology are discussed. These relations, as well as observed differences in etch morphology ...

Tópico(s): Nanowire Synthesis and Applications

1992 - Elsevier BV | Electrochimica Acta

Artigo Revisado por pares

Martín Koch, J. Feldmann, G. von Plessen, E. O. Göbel, P. Thomas, K. Köhler,

... The experimental demonstration is performed employing especially designed semicondutor quantum-well structures.

Tópico(s): Spectroscopy and Quantum Chemical Studies

1992 - American Physical Society | Physical Review Letters

Artigo Revisado por pares

Adela Mun ̃oz-Páez, P. Malet,

The geometrical structure around Ti ions in a system formed by amorphous titania coating on the silica surface has been studied using EXAFS and XANES. Samples were prepared by two methods: (I) impregnation from n-hexane solution of Ti-alcoxide, and (II) homogeneous deposition precipitation from water solutions. Analysis of the EXAPS data indicates that Ti ions are sixfold coordinated in both samples, the distance TiO being similar to that of the crystalline TiO2-anatase in samples prepared by method ...

Tópico(s): Glass properties and applications

1992 - Elsevier BV | Applied Surface Science

Artigo Acesso aberto Revisado por pares

Christoph Bruder, Herbert Schoeller,

... charging effects on time-dependent transport in small semicondutor quantum dots with arbitrary level spectra is studied. ...

Tópico(s): Quantum Information and Cryptography

1994 - American Physical Society | Physical Review Letters

Livro Revisado por pares

R. T. Phillips,

... and Instantaneous Frequency Dynamics of Excitonic Polarization in Semicondutor Quantum Wells J.Y. Bigot, et al. 16 ...

Tópico(s): Spectroscopy and Quantum Chemical Studies

1994 - Springer Nature | NATO ASI series. Series B : Physics

Artigo Revisado por pares

Yoshifumi Nishi, Atsuhiro Kinoshita, Daisuke Hagishima, J. Koga,

... improvement of dopant-segregated Schottky (DSS) metal–oxide–semicondutor field-effect transistors (MOSFETs) compared with conventional (Conv.) ...

Tópico(s): Silicon Carbide Semiconductor Technologies

2008 - Institute of Physics | Japanese Journal of Applied Physics

Artigo

Amirhossein Ghazisaeidi, Leslie A. Rusch,

... Monte Carlo algorithm, and examine the efficiency of semicondutor optical amplifier (SOA)-based intensity noise suppression in ...

Tópico(s): Semiconductor Lasers and Optical Devices

2010 - Institute of Electrical and Electronics Engineers | IEEE Photonics Technology Letters

Artigo Acesso aberto Revisado por pares

Raffaella Buonsanti, Vincenzo Grillo, Elvio Carlino, Cinzia Giannini, F. Gozzo, M. García‐Hernández, M. A. Garcı̀a, R. Cingolani, P. Davide Cozzoli,

A colloidal nonaqueous approach to semiconductor-magnetic hybrid nanocrystals (HNCs) with selectable heterodimer topologies and tunable geometric parameters is demonstrated. Brookite TiO(2) nanorods, distinguished by a curved shape-tapered profile with richly faceted terminations, are exploited as substrate seeds onto which a single spherical domain of inverse spinel iron oxide can be epitaxially grown at either one apex or any location along their longitudinal sidewalls in a hot surfactant environment. ...

Tópico(s): Characterization and Applications of Magnetic Nanoparticles

2010 - American Chemical Society | Journal of the American Chemical Society

Artigo Acesso aberto Revisado por pares

Lin Qiu-Bao, Renquan Li, Zeng Yong-Zhi, Zhu Zi-Zhong,

... when doped by Fe; whereas these dilute magnetic semicondutors(DMS's) show unstable magnetism when doped by ...

Tópico(s): ZnO doping and properties

2006 - Science Press | Acta Physica Sinica

Artigo Acesso aberto Brasil Produção Nacional

J. S. Agnaldo, J.B.V. Bastos, J. C. Cressoni, G. M. Viswanathan,

... Elas apresentam uma superfície nanoporosa de TiO2, um semicondutor de bandgap largo. A luz excita elétrons do ...

Tópico(s): Advanced Photocatalysis Techniques

2006 - SOCIEDADE BRASILEIRA DE FÍSICA | Revista Brasileira de Ensino de Física

Artigo Acesso aberto Brasil Produção Nacional Revisado por pares

Paulo R. Bueno, J.A. Varela,

... the fact that all of these n-type semicondutor ceramics have the tendency to establish a grain ...

Tópico(s): Electronic and Structural Properties of Oxides

2006 - Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímer | Materials Research

Artigo

T. Yamamoto, Takahisa Ohno,

... metallic, and doped rutile TiO${}_{2}$ is a semicondutor with the in-gap state related to a ...

Tópico(s): Copper-based nanomaterials and applications

2012 - American Physical Society | Physical Review B

Artigo Revisado por pares

N. Lukyanchikova,

... fluctuations may occur in the lattice of a semicondutor.

Tópico(s): Force Microscopy Techniques and Applications

1993 - Elsevier BV | Physics Letters A

Artigo Revisado por pares

T. K. Cheng, L. H. Acioli, J. Vidal, H. J. Zeiger, G. Dresselhaus, M. S. Dresselhaus, Erich P. Ippen,

This letter introduces the general notion of significantly modulating the physical characteristics of a solid on a terahertz time scale with coherent lattice vibrations. We show, as an example, experiments in which coherent phonons are optically excited in single-crystal Ti2O3, which is a narrow-gap semiconductor at 300 K and gradually transforms into a semimetal at 600 K. Quantitative comparison of previous equilibrium measurements to our new transient measurements suggests that the induced coherent ...

Tópico(s): Mechanical and Optical Resonators

1993 - American Institute of Physics | Applied Physics Letters

Artigo Revisado por pares

Teresa M. V. D. Pinho e Melo,

... high temperature lubricants and polyisoxazoles have applications as semicondutors. The key feature of these heterocycles is that ...

Tópico(s): Click Chemistry and Applications

2005 - Bentham Science Publishers | Current Organic Chemistry

Artigo Revisado por pares

A. N. Oraevsky, D. K. Bandy,

... medium that has a third-order nonlinearity. The semicondutor material provides a better contrast ratio by a ...

Tópico(s): Photonic Crystals and Applications

1996 - Elsevier BV | Optics Communications

Artigo Acesso aberto Revisado por pares

Syamsundar De, Abdelkrim El Amili, Ihsan Fsaifes, Grégoire Pillet, Ghaya Baili, Fabienne Goldfarb, Mehdi Alouini, I. Sagnes, Fabien Bretenaker,

... to come from the thermal fluctuations of the semicondutor active medium induced by pump intensity fluctuations. However, ...

Tópico(s): Advanced Fiber Laser Technologies

2014 - Institute of Electrical and Electronics Engineers | Journal of Lightwave Technology

Artigo Acesso aberto Brasil Produção Nacional Revisado por pares

Jucilene Feltrin, Morgana Nuernberg Sartor, Agenor De Noni, Adriano Michael Bernardin, Dachamir Hotza, J.A. Labrincha,

... através da introdução de dopantes na estrutura do semicondutor. Neste trabalho, foi realizada uma revisão dos principais ...

Tópico(s): Pigment Synthesis and Properties

2013 - Associação Brasileira de Cerâmica | Cerâmica

Artigo Revisado por pares

Peng Wu, Ting Zhao, Shanling Wang, Xiandeng Hou,

Semiconductor quantum dots (QDs) exhibit unique optical and photophysical properties that offer significant advantages over organic dyes as optical labels for chemo/bio-sensing. This review addresses the methods for metal ion detection with QDs, including photoluminescent, electrochemiluminescent, photoelectrochemical, and electrochemical approaches. The main mechanisms of direct interaction between QDs and metal ions which lead to photoluminescence being either off or on, are discussed in detail. ...

Tópico(s): Carbon and Quantum Dots Applications

2013 - Royal Society of Chemistry | Nanoscale