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Artigo Acesso aberto Revisado por pares

Patrick Zschech, Christoph Sager, Philipp Siebers, M. Pertermann,

... Die Herausforderung besteht hierbei nicht nur darin, defekte Wafer von funktionsfähigen zu separieren, sondern gleichzeitig auch zwischen spezifischen ...

Tópico(s): Advanced Neural Network Applications

2020 - Springer Science+Business Media | HMD Praxis der Wirtschaftsinformatik

Jornais Acesso aberto

Jonathan Northcroft, Waldemar Januszczak, John Dugdale, Hala Jaber, Mansieur Mangetout, Matthew Wall, Barbara Hall, Kathryn Hughes, Michelene Wandor, Helen Kirwan-Taylor, Fred Redwood, Jon Swain, Helen Davies, Sally Brock, Rob Hughes, Jason Dawe, Dan Pearson, John Peter, V S, Mark Hodgkinson, Jonathan Miller, Andrew Longmore, Andrew Morgan, Jane Mulkerrins, J D, Susan d'Arcy, Mike Broad, Amanda Hall, Gareth Walsh, Frank Whitford, Ivo Tennant, Stephen Olley, Ferdinand Mount, Mark Lawson, Kathryn Cooper, Greg Lang, John Elliot, William Lewis, David Smith, G R, Peter Sharkey, David Schwartz, Neil Wormald, E P, Clive Davis, Lynne Truss, Meg Fraser, Gideon Garter Professor, Tony Allen-Mills, K J Wood, Simon Wilde, Ian Hay Davison, Martin James, Kodwo Eshun, Robert Winnett, Irwin Stelzer, Peter Hodson, Peter Wilson, Rosie Millard, H Harley, David Dougill, Nicholas Hellen Social Affairs Editor, Diran Adebayo, Paul Muldoon, Tony Marcus, Geraldine Hackett, Nick Speed, Cally Law, David Bond, Hugh Canning, Geraldine Hackett Education Correspondent, Nils Pratley, Jeremy Clarkson, Kathy Harvey, Graham Duffill, Peter Conradi, Karene Batstone, Louise Taylor, Edward Porter, Stewart Lee, Alan Brownjohn, Patricia Nicol, Hilary Clarke, Pete Waterfield, Sarah Dempster, Eben Black, Christopher Price, Peter Hughes, Helen Monks, Peter Millar, John Hart, John Perry, Alan Millard, Peter Oliver, Fiona Brown, Adam Nathan, P A, Dave Lees, Paul Bailey, K T, Chris Johnston, John Thompson, Stuart Wavell, Nicholas Hytner, Charles Clarke, Roger Eglin, Pauline Westbury, Michael Bilton, Peter Hounam, Dominique Coughlin, Pat Cash, Paul Donovan, Tom Conran, Dermot Ryan, Vincent Crump, Paul Kimmage, Peter Edwards, Chris Woodhead, Brian O'Driscoll, Lucinda Kemeny, Jasper Gerard, Derek Clements, Michael Woodhead, Rohan Gunaratna, Paul Driver, Ian Hawkey, Shelley Von Strunckel, Alex Clark, David Leppard, Paul Durman, Mark Ludlow, Lisa Grainger, A Wallace, Alicia Wyllie, Mark Edwards, Rosemary Evans, Susan Clark, Martin Deeson, Kira Cochrane, Lucy Wakefield, Maggie Gee, Danny O'Brien, Antony Edmonds, Dr David Bethell, Simon Wilde cricket correspondent, Peter Webb, John Williams, Alan Combes, Sean Newsom, Raymond Keene, David Cracknell, Cosmo Landesman, Katrina Manson, Robbie Hudson, Diana Wright, Michael Miller, David Charters, Stephen Jones, Dominic O'Connell, Richard Evans, Uzi Mahnaimi, Nick Cain, Barry Flatman, Louise Armitstead, Michael Wright, Dan Gairns, Natalie Graham, D Lasnbrook, Michael Wood, Alan Pearey, Melinda Stevens, Caroline Donald, S D, Keith Wheatley, Richard Francis, J Sellick, Dr Richard Gordon, David Walsh, Robert Barnett, Jack Grimston, H N, Bryan Appleyard, Lois Rogers Medical Correspondent, Stephen Armstrong, John Elliott, Christopher Goodwin, Jonathan Leake Environment Editor, Richard Woods, H Jones, Maria McErance, Maurice Chittenden, Richard Brooks Arts Editor, Aleks Sherz, Richard Rae, Mark Franchetti, Ray Hutton, Rebecca Fowler, Emma Tennant, Alexandra Dawe, Mrie Colvin, Leslie Jones, Michael Sheridan, Brian Young, D J Taylor, John Harlow, David Crook, Godfrey Smith, Helen Mound, Rob Derry, Dipesh Gadher, Hilary Lowe, John Waples, A A Gill, Matthew Campbell, Brian Glanville, John Carey, Martin Wroe, Professor Keith Swanwick, Geoff Taylor, Tom Robbins, Chrissy Iley, Jonathan Carr-Brown, Jonathan Leake Science Editor, Jonathan Calvert, John Hay, Michael Aspel, Rajiv Radhakrishnan, David Wassell, Sean O'brien, Naomi Caine, Nigel Powell, David Wickers, Sally Kinnes, Roger Dobson, Brian Doogan, Peter Schmeichel, Minette Marrin, Mark Hodson, Andrew Frankel, Graham Norwood, Joe Lovejoy, Rupert Steiner, Luke Randolph, Michael John, Hugh Pearman, Paul Stephen Lubicz, Lousie Johncox, Jenni Russell, David Smith Economics Editor, Anthony Howard, Sarah Baxter, Helen Vandevelde, Peter Roebuck, Maurice Fitzpatrick, Chris Feetenby, Matthew Goodman, Sandy Gall, Simon Howard, Damon Albam, Barry Newcombe, Dominic Rushe, Louise Crocker, Penelope Lively, John Ekserdjian,

... widescreen television sets, including conventional and flat screens Wafer-Thin Finesse Sharp Aquos Lc-22sv2e Picture Gallery ...

2003 - Gale Group | Sunday Times HA GDA

Artigo Revisado por pares

Renzhi Ma, Yoshio Bando, Dmitri Golberg, Tadao Sato,

... eines dünnen Bor-Films auf einem Si(001)-Wafer in Gegenwart von Mg-Dampf unter Ar/O2 bewirkt die Bildung ...

Tópico(s): MXene and MAX Phase Materials

2003 - Wiley | Angewandte Chemie

Jornais Acesso aberto

Waldemar Januszczak, Karen Krizanovich, Matthew Wall, Barbara Hall, Judith O'Reilly Education Correspondent, Michael Cockrell, Lucas Hollweg, Peter Shaffer, Fred Redwood, Nicholas Rufford, John Peter, Pam Barrett, Emma Moore, Stephen Bevan Transport Correspondent, Amanda Ursell, Neil Inkley, Susan d'Arcy, Frank Whitford, Ivo Tennant, Robert Hiscox, Hugh Lawson, Sarah Mower, David Smith, John Harlow Social Affairs Editor, Kirstie Hamilton City Editor, Humphrey Carpenter, Chris Dignan, Melanie Phillips, Ian Rowson, Frederic Raphael, Neil Wormald, Andrew Sullivan, Clive Davis, Stephen Grey, Mary Wilson, Adam Lively, Mike Fitzgerald, Nathan Schwarz, Chris Goodwin, Charlotte Wolfe, Dr Roger Henderson, Edward Platt, Tony Allen-Mills, Simon Wilde, Martin James, Robert Sandall, Anthony Sattin, Steve Farrar, Robert Winnett, Irwin Stelzer, Robert Hewison, Peter Wilson, Roger Anderson, David Dougill, York Membery, Alan Flacks, John Evans, Sarah Toyne, David Hewson, Anthony Slaughter, Tania Alexander, Jason Heath, Margaret Coles, Jonathon Carr-Brown, Alasdair Reid, Sally Becker, Hugh Canning, Nigel Williams, Jeremy Clarkson, Stewart Lee, Edward Porter, Louise Taylor, Mark Graham, Joan Nurse, David Cunningham, D P Marchessini, Larraine, Oliver Wright, C Holding, Robin Marlar, Graham Otway, Sally Platt, Richard Johnson, Ken Roper, Phillip Oppenheim, Stuart Wavell, Maggie Gee, Sean Hanna, Josephine Smit, Paul Donovan, Lynn Eaton, Tim Salmon, Simon Mills, Hugh McIlvanney, Stan Labovitch, Smita Talati, Paul Driver, Richard Dawkins, Michael Woodhead, Garth Pearce, Robert Mendick, Richard Sheridan, John Follain, Maeve Sheehan, Peter Windsor, K Sarnant, Ian Hawkey, Ron Edgar, Steven Downes, Cecil Jonklaas, Christopher Morgan, Larry Ellison, Alex Clark, Shelley Von Strunckel, Angella Johnson, Alicia Wyllie, Richard Girling, Mark Edwards, Steve Farrar Science Correspondent, Kirstie Hamilton, Danielle Crittenden, Susan Clark, Fiona McHugh, David Lawrenson, Dr Peter Leigh, Nicholas Rufford Home Affairs Editor, Lois Jones, Cosmo Landeman, A Spangenberg, Gabriel Milland, Victoria O'Brien, Raymond Keene, Paul McCartney, Peter Gordon, Anthony Entress, Cosmo Landesman, Lorna Slade, David Walton, Diana Wright, Mark, Helen Hawkins, Michael Prescott Political Editor, Stephen Jones, Jim Bentley, Richard Evans, Uzi Mahnaimi, Nick Cain, Gerhard Nothlich, Stephen Bevan, Michael Wright, Lucy Atkins, Stewart Owen, Julie Cohen, Jeremy Lewis, Keith Wheatley, Claire Oldfield, Richard Brooks, David Walsh, Alex Kadis, John Stern, Keith Monk, Trevor Lewis, Colin McDowell, Lois Rogers Medical Correspondent, James Naughtie, Christopher Goodwin, Mark Macaskill, Paul Kavanagh, Mark Prigg, R W Johnson, David Franklin, Josh Salzmann, Roland White, Bernard Cornwell, William Rees-Mogg, Lesley Gillilan, Maurice Chittenden, Alex Fortune, Kevin Pratt, Louise Goldman, Eduardo Ponce-Vivanco Ambassador, Raj Persaud, Judith O'Reilly, Mark Franchetti, Jonathan Powell, Craig Lord, Jon Ungoed-Thomas, Ray Hutton, Jonathan Leake, Ricky Dalton, Frank McLynn, Raymond Seitz, Michael Sheridan, Christopher Hawtree, Sean Hargrave, Amanda Craig, Christine Webb, Margaret Walters, Brian Smyth, Matthew Lynn, Godfrey Smith, John Waples, David Osborne, A A Gill, Matthew Campbell, Brian Glanville, Louise Johncox, Antonia Fraser, Tom Robbins, David Sumner Smith, Robert Johnston, Stephen Pettitt, Ann McFerran, Jonathan Leake Science Editor, Trushar Barot, Kevin Goldstein-Jackson, Sally Kinnes, Andrew Lorenz, Naomi Caine, Hazel Courteney, David Wickers, Roger Dobson, Tom Rhodes, Alan Little, Christine Ross, John Cornwell, Adam Manktelow, Mark Hodson, Karl Lagerfeld, Steven Saylor, Jonathan Futrell, Stephen Gooch, John Cole, Rupert Steiner, Hugh Pearman, Debbie Rix, Dan Cairns, F Golden, Julian Ryall, Tony Perrottet, John Newcombe, Bruce Shaxson, Wild Swans, Marian Philips, David Smith Economics Editor, Lily Ann Ribberink, Simon Trump, Zoe Linkson, Martin Booth, Chris Feetenby, Joanna Simon, Stephen Boyd, Simon Howard, Lavinia Bramwell, Adrian Somerfield, Lisa Verrico, Dominic Rushe, Boris Schapiro, Karen Robinson, Mark Mooney,

... intercepts and eliminates 90% of junk e-mail Wafer-thin solar cells promise cheap power Energy Sunday ...

1999 - Gale Group | Sunday Times HA GDA

Artigo

M. L. Polignano, G. F. Cerofolini, H. Bender, C. Claeys, J. Reffle,

... finden, die niedrigere Werte der Defektdichte gegenüber nichtgetemperten Wafer liefert, und die von Lot zu Lot reproduzibel ist. 3) In HI–LO-vorgetemperten Wafer nimmt die Rekombinationslebensdauer mit zunehmender Sauerstoffdiffusionslänge der Hochtemperaturvorbehandlung ...

Tópico(s): Integrated Circuits and Semiconductor Failure Analysis

1987 - Wiley | physica status solidi (a)

Jornais Acesso aberto

Waldemar Januszczak, Michael Prescott, Jp McManus, Barbara Hall, Alan Atkinson, James Dairymple, Peter McKay, John Davison, Helen Davidson, Philip Norman, Lisa O'Carroll, Pam Barrett, Christopher Russell-Pavier, G Spencer, John Harlow Transport Correspondent, Jonathan Miller, Eric Dymock, Lloyd Newson, Susan d'Arcy, Joanna Duckworth, Frank Whitford, Graham Rose, Steven Goldman, Ned Balfe, David Landers, Nicolette Jones, Diana Wright Personal Finance Editor, Clive Scott-Hopkins, Sally Payne, J Harrower Managing Director, David Smith, Humphrey Carpenter, Robert Leedham, Nick Pitt, Ahmed Rashid, Mary Wilson, Charles Murray, Neville Hodgkinson, Tony Allen-Mills, Paul Arrakis, Geordie Greig, Robert Sandall, Iain Johnstone, Martin James, Helen Simpson, Ann Turner, Nilgin Yusuf, Irwin Stelzer, Robert Hewison, Ivan Fallon, David Dougill, Tristan Garel-Jones, J K Halfyard, Dermot Desmond, Ryan Murphy, Cliff Temple, Norman Shepherd, Malcolm Wheatley, John Redwood, Chris Jenkins, Harvey Porlock, Hugh Canning, Jeremy Clarkson, Steve Platt, Peter Kemp, Dave Steward State President, Michael Jones, Caroline Lees, John McVicar, Sister Superior, Peter Kellner, Michael Smurfit, George Perry, Sue Mott, Arnold Wesker, Robin Marlar, Pauline Griffiths, Mark Skipworth, Anatole Kaletsky, Nick Gardner, Shelley von Strunckel, Jonathan Margolis, Christine Toomey, Bernard Cafferty, Charles Hambro Senior Honorary, Stuart Wavell, Paul Donovan, Steven Wheeler, Will Fotheringham, Mary Loudon, Jeff Randall, John Glackin, Brian Crozier, James Bethell, James Adams, Gordon Douglas, Margaret Dibben, Liz Lightfoot, Robert Crawford, David Leppard, Tim Rayment, Rufus Olins, Mike Ferris, Martin Jacques, Phil Baker, Roger Williams, Charles Hymas Education Correspondent, Christopher Lloyd, Michael Winner, Philip Clough, Lois Rogers, Jenny Diski, Alan Stockwell, Rt Hon Gerald Kaufman Mp (Lab), John Karter, Adrian George, Brian Masters, Lisa Brinkworth, Richard Cook, Marie Colvin, Greg Hadfield, Diana Wright, Craig Brown, Hugh ApSimon, Stephen Jones, Quentin Crisp, Imogen Edwards-Jones, Paul Nuki, Nick Hornby, Andrew Grice, Derek Johnson, Alastair Brett, Martin Searby, Ivan Hill, Rob Ryan, Ian Critchley, Anthony Quinn, Alastair Robertson, Ian Burrell, Lois Rogers Medical Correspondent, J G Ballard, Andrew Lorenz Associate Business Editor, Andrew Hogg, Alan Brodrick, Tim Willis, Brough Scott, Albert Roux, Louise Doughty, Richard Woods, Garth Alexander, Louise Branson, John Redwood Mp, Peter Johnson, Maurice Chittenden, Julie Burchill, Rebecca Fowler, David Hunn, Helen Gore, Satish Desai, John Sharp, John Harlow, Godfrey Smith, Matthew Lynn, Andrew Alderson, Alastair Burnet, Roy Hattersley, Abe Frajndlich, Matthew Campbell, Stan Levenson, Norman Macrae, Rajeev Syal, Sally Burton, Chrissy Iley, Lauren St John, John Abbott, Tom Tickell, Doris B Kelly, Gilbert Adair, Andrew Lorenz, John Furbisher, Michell Raper, Claire Rayner, Alan Ruddock, David Wickers, John Cornwell, Jonathan Futrell, Nigel Roebuck, Jeff Randall City Editor, Hugh Pearman, Christopher Bray, Myron Magnet, John Burns, Penny Perrick, Tony Hetherington, Simon Reeve, Peter Roebuck, Colin Bridger, Walter Ellis, Joanna Simon, Jillian Edelstein, Kennerley Edwards, Sandy Gall, Iain Jenkins, Janine di Giovanni, Boris Schapiro,

... back on commitments resourcews are to be spread wafer thin, says James Adams Why Defence needs a ...

1993 - Gale Group | Sunday Times HA GDA

Artigo Revisado por pares

Yeou-Yih Lin, Ship-Peng Lo,

... i.e., model for von Mises stress at wafer center, model for maximum von Mises stress and model for nonuniformity on wafer surface under various combinations of process parameters. The data of von Mises stress and nonuniformity on wafer surface can be first achieved under different conditions ...

Tópico(s): Industrial Vision Systems and Defect Detection

2004 - Elsevier BV | Engineering Applications of Artificial Intelligence

Artigo

A. Fischer, G. Kissinger, G. Ritter, Vladimir Akhmetov, M. Kittler,

... gravitational constraints to the mechanical strength of the wafers, the invariant Von Mises shear stress was chosen. Calculation of load-induced stresses and determination of the onset of plastic deformation have shown that for vertical-type boats annealing at temperature >850 °C would lead to slip formation in the bearing area of the wafer whereas for horizontal-type boats largely slip-free ...

Tópico(s): Thin-Film Transistor Technologies

2009 - Elsevier BV | Materials Science and Engineering B

Artigo Revisado por pares

Yeou-Yih Lin, Ship-Peng Lo,

... carrier back pressure on the stress components and von Mises stress on wafer surface was analyzed and the effect of different ... axial stress was the dominant factor to the von Mises stress distribution on wafer surface. Because that the back pressure had the maximum affect on the axial stress and it made the axial stress increased along the −z direction. Thus, while applying a back pressure, the von Mises stress distribution increased. In addition, the changes ... had the trend to be proportional to the von Mises stress variation and to be inversely proportional to the nonuniformity variation. The result showed obviously that during the CMP process, it could achieve the purpose to improve the planarization of wafer surface by compensating the different carrier back pressures.

Tópico(s): Integrated Circuits and Semiconductor Failure Analysis

2003 - Elsevier BV | Journal of Materials Processing Technology

Artigo Revisado por pares

C Srinivasa-Murthy, D Wang, Stephen P. Beaudoin, T. Bibby, Karey Holland, T.S. Cale,

... CMP) non-uniformity (NU) to the distribution of Von Mises stress on the wafer surface. The model describes mechanical aspects of the ... induces radial and angular (θ) stresses on the wafer surface, and these stresses account for the variation in the calculated Von Mises stress.

Tópico(s): Integrated Circuits and Semiconductor Failure Analysis

1997 - Elsevier BV | Thin Solid Films

Artigo

P. Zaumseil, U. J. Winter,

... damaged surface layer of a fine grinded silicon wafer. Eine theoretische Beschreibung der Intensitätsverteilung von Dreikristalldiffraktometermessungen in paralleler (+n, -n, +n)-Anordnung wird ...

Tópico(s): Optical Coatings and Gratings

1982 - Wiley | physica status solidi (a)

Artigo Acesso aberto Revisado por pares

J. Sorooshian, Ara Philipossian, M. Goldstein, Stephen P. Beaudoin, W. Huber,

This study employs pressure measurements and von Mises stress simulations across surfaces of wafers in order to examine the effect of wafer-ring gap size, extent and direction of wafer bow, and the effect of thermal ...

Tópico(s): Electronic Packaging and Soldering Technologies

2003 - Institute of Physics | Japanese Journal of Applied Physics

Artigo Brasil Produção Nacional

Kai Yang, H. Kappert, G. H. Schwuttke,

... ISS) is very effective in improving lifetime for wafers not containing "intrinsic gettering" sources. Der Einfluß von Sauerstoff auf die Minoritätslebensdauer von Silizium wird untersucht. Volumengetemperte, sauerstoffreiche Kristalle, die anschließend in Wafer geteilt wurden, zeigen Lebensdauerverringerung mit der Temperungsdauer. Siliziumdioxidpräzipitate ... sind das Ergebnis eines "inneren Getterungsmechanismus" der sauerstoffreichen Wafer. Es wird gezeigt, daß eine "äußere Getterung" die Minoritätslebensdauer in Siliziumwafer nicht verbessern kann, wenn während der Herstellung "innere Getterung" aktiviert worden ist. Es wird auch gezeigt, daß eine "äußere Getterung", wie Schallstoßbeanspruchung (ISS) sehr effektiv für die Verbesserung der Lebensdauer von Wafern ist, die keine "inneren" Getterungsquellen enthalten.

Tópico(s): Silicon Nanostructures and Photoluminescence

1978 - Wiley | physica status solidi (a)

Artigo Revisado por pares

Dmitrii Pankin, Anastasia Povolotckaia, Evgenii Borisov, Sofia L. Rongonen, Alexandra Mikhailova, Tat’yana S. Tkachenko, N. Dovedova, L. Rylkova, А. В. Курочкин,

... them. As the object of the investigation the wafers found in the hand-written documents of Academician Friedrich Georg Wilhelm von Struve (Vasily Yakovlevich Struve 1793–1864) were chosen (Fund number 721, the RAS Archive, Saint-Petersburg branch, Struve V.). Besides the common way it was found that a large number of colored wafers were used to join several sheets in one ...

Tópico(s): Building materials and conservation

2021 - Elsevier BV | Journal of Cultural Heritage

Artigo Revisado por pares

Yeou-Yih Lin,

... on the strain components, the stress components, the von Mises stress, and the wafer's nonuniformity were investigated. The findings indicated that ... CMP mechanism could reduce the variation of the von Mises stress distribution to reach the lower wafer's nonuniformity effectively, improve the over-grinding phenomenon ...

Tópico(s): Advanced Machining and Optimization Techniques

2007 - Taylor & Francis | Materials and Manufacturing Processes

Artigo Revisado por pares

Yeou-Yih Lin, Ding-Yeng Chen, Chuang Ma,

... chemical mechanical polishing process (CMP) was established. The von Mises stress on the wafer surface was investigated. The findings indicate that the profile of the von Mises stress correlated with that of the removal ...

Tópico(s): Metal Forming Simulation Techniques

2009 - Elsevier BV | Thin Solid Films

Artigo Revisado por pares

Jing Zhang, Max O. Bloomfield, Jian‐Qiang Lu, R.J. Gutmann, Timothy S. Cale,

... of BCB, are estimated. Simulations show that the von Mises stresses in inter-wafer Cu vias decrease with decreasing pitch length at ...

Tópico(s): Copper Interconnects and Reliability

2005 - Elsevier BV | Microelectronic Engineering

Artigo Revisado por pares

Yongtao Wang, Ku Liming, Sizhuo Suo, Yuxing Dang, Ge Zhong, Yan Zhirui, Qigang Zhou,

... rate is observed near the edge of the wafer, but Poisson's ratio of pad has a less effect on the von Mises stress distribution on the wafer edge. A larger thickness ratio of upper and ...

Tópico(s): Metal and Thin Film Mechanics

2012 - Elsevier BV | Materials Science in Semiconductor Processing

Artigo Revisado por pares

W. Dreyer, Frank Duderstadt, S. Eichler, M. Jurisch,

... theoretical calculation of various stress distributions within the wafers. In this study we show that the nonlinear von Kármán theory may serve as an appropriate tool ... contact area between the load sphere and the wafer, (ii) study of the influence of the anisotropic character of the material, (iii) study of the important geometric nonlinearity. Finally we compare the calculated and theoretical load–flexure relations in order to demonstrate the high accuracy of the von Kármán theory and its finite element implementation.

Tópico(s): Composite Structure Analysis and Optimization

2005 - Elsevier BV | Microelectronics Reliability

Artigo

C. F. Pihl, R. L. Bieber, G. H. Schwuttke,

... 106 erreicht. Die Messungen wurden an einer Reihe von Punkten auf dem Wafer in der Weise durchgeführt, daß sie Bezugsgebiete enthalten, die nicht der Ionenimplantation ausgesetzt waren. Die Ergebnisse zeigen einen Anstieg der Gitterkonstante mit der Ionendosis. Die Gitterkonstante erreicht ein Plateau nach einem Anstieg von 4:105 relativ zum unbestrahlten Gitter. Die Ergebnisse ...

Tópico(s): Electron and X-Ray Spectroscopy Techniques

1973 - Wiley | physica status solidi (a)

Artigo

I. Thurzo, Emil Pinčík,

... GaAs-MOS-Kondensatoren untersucht, die durch HF-Plasmaoxidation von stark dotierten GaAs-Wafers (ND ≈ 1018 cm−3) präpariert werden. Es werden ...

Tópico(s): Advancements in Battery Materials

1984 - Wiley | physica status solidi (a)

Artigo

M.D. de Coteau, Peter R. Wilshaw, R. Falster,

... Präzipitationsverhalten von Kupfer in Silizium untersucht. Gesteuerte Zusätze von Kupfer werden in Wafer diffundiert, die solche Defektstrukturen enthalten, so daß deren ...

Tópico(s): Advanced Surface Polishing Techniques

1990 - Wiley | physica status solidi (a)

Artigo

Burkhard Altekrüger, Martin Gier,

... immer weiter. Die in der Mikroelektronik eingesetzten Si‐Wafer haben heute überwiegend Durchmesser von 6″ (150 mm) und 8″ (200 mm). Z. Zt. wird intensiv an der Einführung der neuen 300 mm‐Wafer‐Generation gearbeitet. Diese Einführung erfordert in einem relativ kurzem Zeitraum große Anstrengungen in der Prozess‐ und Equipment‐Entwicklung und einen hohen Kapitalaufwand für die Erprobung, Evaluation und Implementierung. Am Beispiel der neuen 300 mm‐Si‐Kristallziehanlagen‐Generation EKZ 3000 von Leybold Systems wird die Entwicklung und Erprobung von ...

Tópico(s): 3D IC and TSV technologies

1999 - Wiley | Vakuum in Forschung und Praxis

Artigo Revisado por pares

G. Kissinger, A. Fischer, G. Ritter, V.D. Akhmetov, M. Kittler,

... gravitational constraints to the mechanical strength of the wafers, the invariant von Mises shear stress τM was chosen. The computed maximum values of τM demonstrate that the gravitational induced stress for vertical processing is approximately one order of magnitude less than the gravitational induced stress for horizontal processing. The experimental results obtained from processing of 200mm wafers with different oxygen concentration in horizontal and vertical ...

Tópico(s): Force Microscopy Techniques and Applications

2007 - Scientific.net | Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

Artigo Revisado por pares

D. Castillo-Mejia, Andreas Perlov, Stephen P. Beaudoin,

... Materials' Mirra polisher and the distribution of calculated von Mises stresses on the wafer surface. The paper also considers three different polishing parameters that influence the polishing nonuniformity on the ...

Tópico(s): Welding Techniques and Residual Stresses

2000 - Institute of Physics | Journal of The Electrochemical Society

Artigo Revisado por pares

Heike Schmidt, Ying‐Zhong Shen, M. Leschke, Th Haase, Katharina Kohse‐Höinghaus, Heinrich Lang,

... 4a durch Abscheidung auf einem Titannitrid-beschichteten SiO2-Wafer gezeigt werden konnte. Die REM-Aufnahmen zeigen eine geschlossene Silberschicht mit Silberpartikeln in der Größenordnung von 50–100 nm.

Tópico(s): Organometallic Complex Synthesis and Catalysis

2003 - Elsevier BV | Journal of Organometallic Chemistry

Artigo Revisado por pares

Wilfried von Ammon,

Tópico(s): Silicon and Solar Cell Technologies

1995 - Scientific.net | Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

Artigo Revisado por pares

S von Aichberger, Omar Abdallah, F. Wünsch, M. Kunst,

p-type Si wafers provided with silicon nitride films at the surface are investigated by contactless transient photoconductivity measurements. Comparing wafers of different resistivities and wafers at one side and at two sides provided with nitride films shows that separation and storage of excess charge carriers in the space charge region is the main kinetic process at low injection level. Fitting of the experimental data with a simple model leads to the conclusion that the electron mobility in ...

Tópico(s): Advancements in Semiconductor Devices and Circuit Design

2002 - American Institute of Physics | Journal of Applied Physics

Artigo

T. J. Magge, Jiahui Peng, J. D. Hong, W. Katz, C. A. Evans,

... which major microstructural damage is removed from the wafer by annealing. Versetzungslinien wurden mittels mechanischer Beschädigung in die Rückseite von GaAs-Scheiben eingebracht. Durchlichtelektronenmikroskopie/Elektronenbeugung, Rasterelektronenmikroskopie und Sekundärionen- ...

Tópico(s): Ion-surface interactions and analysis

1979 - Wiley | physica status solidi (a)