R. D. Bradshaw, John E. B. Myers,
... Chu, J. C., James Kalil, and W. A. Wetteroth, Chem. Eng. Progr., 49, 141 (1953). 5 DeAcetis, ...
Tópico(s): Mineral Processing and Grinding
1963 - Wiley | AIChE Journal
Ashis Sen Gupta, George Thodos,
... Chu, J. C., James Kalil, and W. A. Wetteroth, Chem. Eng. Progr., 49, 141 (1953). CASGoogle Scholar ...
Tópico(s): Particle Dynamics in Fluid Flows
1962 - Wiley | AIChE Journal
H.C. Shin, Stella Q. Hong, T. Wetteroth, S. R. Wilson, D.K. Schroder,
Thin film silicon-on-insulator (SOI) devices have an advantage of excellent isolation due to the buried oxide layer leading to reduced capacitance coupling and no latchup in complementary metal-oxide-silicon circuits compared with bulk silicon devices. Reduced junction area should lead to lower leakage for a given device. However, because of the buried oxide, stress is built up in the Si island during isolation processes, especially near the island edges, inducing new kinds of leakage currents, which ...
Tópico(s): Silicon Carbide Semiconductor Technologies
1998 - American Institute of Physics | Applied Physics Letters
Thomas E. Tiwald, John A. Woollam, Stefan Zollner, Jim Christiansen, R. B. Gregory, T. Wetteroth, S. R. Wilson, Adrian R. Powell,
We have measured the dielectric function of bulk nitrogen-doped 4H and 6H SiC substrates from 700 to 4000 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ using Fourier-transform infrared spectroscopic ellipsometry. Photon absorption by transverse optical phonons produces a strong reststrahlen band between 797 and 1000 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ with the effects of phonon anisotropy being observed in the region of the longitudinal phonon energy (960 to 100 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}} ...
Tópico(s): ZnO doping and properties
1999 - American Physical Society | Physical review. B, Condensed matter
Stefan Zollner, J. G. Chen, E. Duda, T. Wetteroth, S. R. Wilson, James N. Hilfiker,
Spectroscopic rotating-analyzer ellipsometry employing a compensator and optical transmission were used to measure the dielectric functions of bulk 4H and 6H SiC from 0.72 to 6.6 eV for light propagating nearly parallel to the hexagonal axis. The measurements below the band gap show the presence of a thin surface layer, which was modeled as SiO2. The data are similar to results for cubic (3C) and 6H SiC from the literature, but differences are notable, particularly above 4 eV. At 5.56 eV, we observe ...
Tópico(s): Semiconductor materials and devices
1999 - American Institute of Physics | Journal of Applied Physics
R. B. Gregory, T. Wetteroth, S. R. Wilson, O. W. Holland, D. K. Thomas,
H + implantation of SiC is the basis for a thin-film transfer process, which when combined with oxidation and hydrophilic wafer bonding, can be exploited to produce silicon carbide-on-insulator material useful as a wide-band-gap semiconductor. This thin-film transfer process has been successfully applied to Si to produce a commercial silicon-on-insulator material. The efficacy of hydrogen to produce thin-film separation was studied by investigation of H+-induced exfoliation in implanted SiC. Results ...
Tópico(s): Advanced ceramic materials synthesis
1999 - American Institute of Physics | Applied Physics Letters
Stefan Zollner, T.-C. Lee, Kari Noehring, A. Konkar, N. David Theodore, W.M. Huang, Dave Monk, T. Wetteroth, S. R. Wilson, James N. Hilfiker,
Spectroscopic rotating-analyzer ellipsometry employing a compensator was used to measure the ellipsometric angles and depolarization from 0.73 to 5.4 eV of commercial separation by implantation of oxygen wafers. The data were analyzed to find the thicknesses of the native oxide cap, the top Si layer, and the buried oxide (BOX). From the depolarization in the spectral region of interference fringes, we determine layer thickness nonuniformities. Although a reasonable agreement between the data can ...
Tópico(s): Silicon Nanostructures and Photoluminescence
2000 - American Institute of Physics | Applied Physics Letters
Seon‐Eui Hong, T. Wetteroth, Hang‐Sik Shin, S. R. Wilson, D. Werho, T.-C. Lee, D.K. Schroder,
Lateral gettering is implemented in thin-film silicon-on-insulator (TFSOI) substrates by introducing crystalline defects in the vicinity of metal-oxide-semiconductor device channel regions prior to gate oxidation. As a result of the gettering a significant improvement in gate oxide integrity is achieved, with increased oxide breakdown voltages and charge-to-breakdowns, as well as a reduction in localized oxide charge trapping. The same gettering effect on separation-by-implantation-of-oxygen and ...
Tópico(s): Silicon and Solar Cell Technologies
1997 - American Institute of Physics | Applied Physics Letters
Amedeo Lancia, Dino Musmarra, Francesco Pepe,
... Chu et al. [Chu, J. C.; Kalil, J.; Wetteroth, W. A. Chem. Eng. Prog. 1953, 49 (3), ...
Tópico(s): Mine drainage and remediation techniques
1997 - American Chemical Society | Industrial & Engineering Chemistry Research
W. H. Johnson, W. A. Keenan, T. Wetteroth,
The ability to control a process is determined by the variability of the process and the variability of the system used to monitor the process. The monitoring system consists of the monitor wafer, the operator, the environment and the test system (gauge). The monitor wafer can be sensitive to short-term and long-term drift, post processing and temperature. This decouples the monitoring system from the process and simplifies the control problem. A gauge-capability study helps establish the repeatability ( ...
Tópico(s): Advanced Sensor Technologies Research
1991 - Elsevier BV | Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
Yonglin Zhang, D.K. Schroder, H.C. Shin, Seon‐Eui Hong, T. Wetteroth, S. R. Wilson,
A transconductance dip, observed in floating body partially depleted SOI devices, is due to transient effects and is reduced with a positive back bias in SOI nMOSFETs. MEDICI simulations show that both hole and electron densities near the front interface fluctuate during the turn-on transient, causing a small decrease and then an increase of the drain current that leads to the transconductance dip. Transient effects also cause an initial current ramp in IDS–VGS characteristics at the start of the ...
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
1999 - Elsevier BV | Solid-State Electronics
S. R. Wilson, T. Wetteroth, Seon‐Eui Hong, Hang‐Sik Shin, B.-Y. Hwang, J. Foerstner, M. Racanelli, Margaret Huang, Hee‐Chul Shin,
Tópico(s): Silicon and Solar Cell Technologies
1996 - Springer Science+Business Media | Journal of Electronic Materials
S. Cristoloveanu, A. M. Ionescu, T. Wetteroth, Hyunsu Shin, Daniela Munteanu, Paulo Gentil, Shin-Nam Hong, S. R. Wilson,
Wafers separated by implantation of oxygen (SIMOX) and annealed at high temperature in argon or nitrogen ambient are compared in terms of film, oxide, interface, and device properties. This evaluation is conducted by correlating pseudo‐metal‐oxide‐semiconductor field effect transistor (Ψ‐MOSFET) data in plain, unprocessed wafers with the performance of n‐ and p‐channel transistors. In situ wafer characterization with the Ψ‐MOSFET technique reveals a pileup of nitrogen near the buried interface, where ...
Tópico(s): ZnO doping and properties
1997 - Institute of Physics | Journal of The Electrochemical Society
R. B. Gregory, O. W. Holland, D. K. Thomas, T. Wetteroth, S. R. Wilson,
ABSTRACT Exfoliation of SiC by hydrogen implantation and subsequent annealing forms the basis for a thin-film separation process which. when combined with hydrophilic wafer bonding, can be exploited to produce silicon-carbide-on-insulator, SiCOI. SiC thin films produced by this process exhibit unacceptably high resistivity because defects generated by the implant neutralize electrical carriers. Separation occurs because of chemical interaction of hydrogen with dangling bonds within microvoids created ...
Tópico(s): Silicon Carbide Semiconductor Technologies
1999 - Cambridge University Press | MRS Proceedings
S. Cristoloveanu, A. M. Ionescu, T. Wetteroth, H.C. Shin, Daniela Munteanu, Paulo Gentil, Seon‐Eui Hong, S. R. Wilson,
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
1996 - Cambridge University Press | MRS Proceedings
Seon‐Eui Hong, T. Wetteroth, S. R. Wilson, B.C.H. Steele, D.K. Schroder,
Tópico(s): Integrated Circuits and Semiconductor Failure Analysis
1998 - Cambridge University Press | MRS Proceedings