Chapter 3 Optical Studies of Strained III-V Heterolayers
1990; Elsevier BV; Linguagem: Inglês
10.1016/s0080-8784(08)62643-5
ISSN0080-8784
AutoresJ. Y. Marzin, Jean‐Michel Gérard, P. Voisin, J.A. Brumt,
Tópico(s)Semiconductor materials and devices
ResumoThis chapter describes the optical studies of strained III–V heterolayers. .The chapter discusses some features of the elasticity theory and presents a discussion of the critical layer thickness beyond which the lattice mismatch can no longer be accommodated by biaxial tensile strains but gives rise to the formation of dislocation networks. The chapter presents within the envelope function formalism (1) the subband extrema of strained heterolayers when one uses the three-band Kane model to describe the hosts' energy states and (2) the valence-subband dispersions of externally and uniaxially stressed GaAs-Ga0.7Al0.3As quantum wells. The chapter includes a presentation of some results of the basic optical properties (absorption, photoluminescence) of a variety of III–V strained heterolayers, focusing on the diversity that results from the interplay of strain and confinement effects.
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