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Gate Leakage Current Suppression in AlGaN/GaN HEMT by RTP Annealing

2013; Springer Nature; Linguagem: Inglês

10.1007/978-3-319-03002-9_37

1863-5539

Somna S. Mahajan, Anushree Tomar, Robert Laishram, Sonalee Kapoor, Amit Mailk, AA Naik, Seema Vinayak, BK Sehgal,

GaN-based semiconductor devices and materials

Ni/Au Schottky contacts to AlGaN/GaN HEMT were formed by E-beam evaporation technique and lift-off process. The contacts were Rapid thermal annealed at 300 °C for duration of 2–10 min. A significant suppression in gate leakage current was observed at 2 and 4 min annealing. At further higher annealing duration deterioration in the reverse gate characteristics was observed.