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Band-gap energy of In x Ga 1 − x N <mml:…

2002; American Physical Society; Volume: 66; Issue: 8 Linguagem: Inglês

10.1103/physrevb.66.085313

1095-3795

Jean‐Yves Duboz, J. A. Gupta, Z. R. Wasilewski, J. N. Ramsey, Robin L. Williams, G. C. Aers, Bruno Riel, G. I. Sproule,

GaN-based semiconductor devices and materials

The band-gap energy of InGaNAs decreases with N content at a smaller rate than that of GaNAs. Precise absorption measurements in strained InGaNAs/GaAs quantum wells on GaAs(001) are reported, and the result is explained in the frame of the repulsion between the nitrogen level and the \ensuremath{\Gamma} conduction band. As the energy separation between both levels is larger when the In content increases, the effect of introducing nitrogen is significantly reduced. In order to get a quantitative description of experimental results, the model includes a detailed description of the local N environment. Results suggest that in our InGaNAs/GaAs quantum wells grown by molecular beam epitaxy, the N configuration should be close to the statistical one. Using this model to explain the effect of annealing on band structure, we conclude that, on average, N atoms gain one additional nearest-neighbor In atom during the annealing, leading to a moderately large band-gap blueshift of 20--30 meV.