Stable nitride complex and molecular nitrogen in N doped amorphous Ge2Sb2Te5
2008; American Institute of Physics; Volume: 93; Issue: 24 Linguagem: Inglês
10.1063/1.3052046
ISSN1520-8842
AutoresZhimei Sun, Jian Zhou, Hyun‐Joon Shin, Andreas Blomqvist, Rajeev Ahuja,
Tópico(s)Chalcogenide Semiconductor Thin Films
ResumoNitrogen doping is identified to be a sufficient way to reduce the power consumption of Ge2Sb2Te5, a phase-change material for data storage. On the basis of ab initio molecular dynamics simulations, we show that the doped N in amorphous Ge2Sb2Te5 coexist as Ge(Sb, Te)N complex and N2, and high density of the film produces more N2. Furthermore, both Ge(Sb, Te)N complex and N2 are stable upon annealing at 600 K.
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