III-V compound semiconductor film growth in low earth orbit on the wake shield facility
1995; American Institute of Physics; Linguagem: Inglês
10.1063/1.47287
ISSN1935-0465
AutoresCharles Horton, A. Ignatiev, Mark Sterling, A. Bensaoula, A. Freundlich, Steven Pei, Ron Sega,
Tópico(s)Electron and X-Ray Spectroscopy Techniques
ResumoGallium Arsenide (GaAs) films, both silicon doped and undoped, have been deposited by Molecular Beam Epitaxy (MBE) in Low Earth Orbit (LEO) in an ultra vacuum environment created by the Wake Shield Facility (WSF). The WSF is a 12 foot diameter stainless steel disk that sweeps out a volume of space thus creating an ultra vacuum in its wake. It was developed specifically to take advantage of the ultra vacuum for the deposition of thin film materials. The WSF was flown for the first time on STS‐60 in February, 1993. The mission objectives were to measure the unique wake vacuum environment and to epitaxially deposit GaAs thin films. In this paper, we describe the films deposited and report on the characterization performed to date. Films were deposited in two basic structures. The first structure consisted of undoped GaAs films of thicknesses ranging from 2 to 4 μm with a thin (≊200 nm) highly silicon doped layer (n≊5×1017/cc) on top. This is basically a metal‐semiconductor field effect transistor (MESFET) structure. The second structure was a lightly silicon doped GaAs film (n≊5×1015/cc). We have obtained Photoluminescence (PL), Secondary Ion Mass Spectrometry (SIMS) and X‐Ray diffraction data on selected films. The data indicate average quality single crystal films with oxygen and carbon contamination. The source of the contamination and further characterization will be discussed.
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