Experimental Dispersions of Conduction Bands in Bi 2 CaSr 2 Cu 2 O 8
1990; Institute of Physics; Volume: 13; Issue: 6 Linguagem: Inglês
10.1209/0295-5075/13/6/011
ISSN1286-4854
AutoresHans Bernhoff, K. Tsushima, J. M. Nicholls,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoThe unoccupied electronic structure of Bi2CaSr2Cu2O8 crystals cleaved in ultrahigh vacuum has been investigated with k-resolved inverse photoelectron spectroscopy. A number of dispersing structures are observed close to the Fermi level, corresponding to rapidly dispersing Cu-O and Bi-O conduction bands. An expected band crossing at the Fermi level of Cu-O bands is observed, although the bandwidth of these states is found to be much smaller than that predicted in several band structure calculations. Likewise, two Bi-O bands are found to have less dispersion than predicted and these bands are also more separated from each other throughout the Brillouin zone.
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