Portal de Periódicos da CAPES

Frequency response of ZnO-doped BaZrxTi1−xO3 ceramics

2002; Elsevier BV; Volume: 76; Issue: 3 Linguagem: Inglês

10.1016/s0254-0584(01)00534-x

1879-3312

Yongli Wang, Longtu Li, Jian Quan Qi, Zhilun Gui,

Dielectric properties of ceramics

Abstract Electrical properties and relaxation characteristics for undoped and ZnO-doped BaZr x Ti 1− x O 3 have been studied via complex impedance measurements. The results suggest that at the grain interior Zn 2+ substitutes Ti 4+ and serves as an acceptor dopant. STEM and EDX analysis confirm the expected presence of Zn and Ti rich phase at the triangle phase boundaries, but find few signals for zinc at the grain core. More insightful studies are needed in order to clarify this point.