Electrical behavior and oxygen vacancies in BiFeO3/[(Bi1/2Na1/2)0.94Ba0.06]TiO3 thin film
2009; American Institute of Physics; Volume: 95; Issue: 19 Linguagem: Inglês
10.1063/1.3259655
ISSN1520-8842
AutoresJiagang Wu, Guangqing Kang, John Wang,
Tópico(s)Dielectric properties of ceramics
ResumoMultiferroic bilayered thin films consisting of [(Bi1/2Na1/2)0.94Ba0.06]TiO3 (BNBT) and BiFeO3 (BFO) nanolayers were successfully grown on Pt/TiO2/SiO2/Si substrates via a combined sol-gel and radio frequency sputtering route. The bilayered BFO/BNBT thin film with (110) orientation and dense texture exhibits excellent ferroelectric and dielectric behavior (e.g., 2Pr∼79.7 μC/cm2, 2Ec∼772.6 kV/cm, εr∼178, and tan δ∼0.03), together with a long fatigue endurance up to 1×1010 switching cycles, while the desired magnetic behavior is well retained. Impedance study suggested that the second ionization of oxygen vacancies was involved in the conduction of the bilayered BFO/BNBT thin film.
Referência(s)