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Ultra high amorphous silicon passivation quality of crystalline silicon surface using in-situ post-deposition treatments

2014; Wiley; Volume: 9; Issue: 1 Linguagem: Inglês

10.1002/pssr.201409494

ISSN

1862-6270

Autores

Hosni Meddeb, Twan Bearda, Wissem Dimassi, Yaser Abdulraheem, Hatem Ezzaouia, Ivan Gordon, Jozef Szlufcik, Jef Poortmans,

Tópico(s)

Silicon Nanostructures and Photoluminescence

Resumo

physica status solidi (RRL) – Rapid Research LettersVolume 9, Issue 1 p. 53-56 rrl solar Ultra high amorphous silicon passivation quality of crystalline silicon surface using in-situ post-deposition treatments H. Meddeb, Corresponding Author H. Meddeb [email protected] KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh, KSA IMEC, Kapeldreef 75, 3001 Leuven, Belgium Research and Technology Center of Energy, Photovoltaic Department, BP 95, Hammam-Lif 2050, Tunisia University of Carthage Faculty of Sciences of Bizerta, Tunisia Phone: +216 94 340886Search for more papers by this authorTwan Bearda, Twan Bearda IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorWissem Dimassi, Wissem Dimassi Research and Technology Center of Energy, Photovoltaic Department, BP 95, Hammam-Lif 2050, TunisiaSearch for more papers by this authorYaser Abdulraheem, Yaser Abdulraheem Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat, KuwaitSearch for more papers by this authorHatem Ezzaouia, Hatem Ezzaouia Research and Technology Center of Energy, Photovoltaic Department, BP 95, Hammam-Lif 2050, TunisiaSearch for more papers by this authorIvan Gordon, Ivan Gordon IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorJozef Szlufcik, Jozef Szlufcik IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorJef Poortmans, Jef Poortmans IMEC, Kapeldreef 75, 3001 Leuven, Belgium Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt, BelgiumSearch for more papers by this author H. Meddeb, Corresponding Author H. Meddeb [email protected] KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh, KSA IMEC, Kapeldreef 75, 3001 Leuven, Belgium Research and Technology Center of Energy, Photovoltaic Department, BP 95, Hammam-Lif 2050, Tunisia University of Carthage Faculty of Sciences of Bizerta, Tunisia Phone: +216 94 340886Search for more papers by this authorTwan Bearda, Twan Bearda IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorWissem Dimassi, Wissem Dimassi Research and Technology Center of Energy, Photovoltaic Department, BP 95, Hammam-Lif 2050, TunisiaSearch for more papers by this authorYaser Abdulraheem, Yaser Abdulraheem Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University, P.O. Box 5969, 13060 Safat, KuwaitSearch for more papers by this authorHatem Ezzaouia, Hatem Ezzaouia Research and Technology Center of Energy, Photovoltaic Department, BP 95, Hammam-Lif 2050, TunisiaSearch for more papers by this authorIvan Gordon, Ivan Gordon IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorJozef Szlufcik, Jozef Szlufcik IMEC, Kapeldreef 75, 3001 Leuven, BelgiumSearch for more papers by this authorJef Poortmans, Jef Poortmans IMEC, Kapeldreef 75, 3001 Leuven, Belgium Faculty of Sciences, University of Hasselt, Martelarenlaan 42, 3500 Hasselt, BelgiumSearch for more papers by this author First published: 05 December 2014 https://doi.org/10.1002/pssr.201409494Citations: 14Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract A parametric study of post-deposition hydrogen plasma treatment of intrinsic a:Si:H films is performed. We demonstrate a significant improvement in passivation of c-Si(100) promoting epitaxy after an in-situ hydrogen plasma treatment depending mainly on the pressure and slightly on the power. Plasma diagnostic indicates an increase of Hα* signal with high power and low pressure. However, our analysis reveals a better hydrogen incorporation with high pressure and a slight increase in monohydride with high power. Longer H2 plasma duration up to 50 s shows no detrimental effect on the passivation quality. Optimizing the in-situ H2 plasma treatment, high minority carrier lifetime over 15 ms was achieved after short thermal annealing. (© 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) References 1T. Mishima, M. Taguchi, H. Sakata, and E. Maruyama, Sol. Energy Mater. Sol. Cells 95, 18 (2011). 1Y. 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