Doping- and interference-free measurement of I2D/IG in suspended monolayer graphene blisters
2015; Wiley; Volume: 252; Issue: 11 Linguagem: Inglês
10.1002/pssb.201552314
ISSN1521-3951
AutoresDominik Metten, Guillaume Froehlicher, Stéphane Berciaud,
Tópico(s)Plasmonic and Surface Plasmon Research
Resumophysica status solidi (b)Volume 252, Issue 11 p. 2390-2394 Invited Article Doping- and interference-free measurement of / in suspended monolayer graphene blisters Dominik Metten, Dominik Metten Institut de Physique et Chimie des Matériaux de Strasbourg and NIE, UMR 7504, Université de Strasbourg and CNRS, 23 rue du Lœss, BP43, 67034 Strasbourg Cedex 2, FranceSearch for more papers by this authorGuillaume Froehlicher, Guillaume Froehlicher Institut de Physique et Chimie des Matériaux de Strasbourg and NIE, UMR 7504, Université de Strasbourg and CNRS, 23 rue du Lœss, BP43, 67034 Strasbourg Cedex 2, FranceSearch for more papers by this authorStéphane Berciaud, Corresponding Author Stéphane Berciaud [email protected] Institut de Physique et Chimie des Matériaux de Strasbourg and NIE, UMR 7504, Université de Strasbourg and CNRS, 23 rue du Lœss, BP43, 67034 Strasbourg Cedex 2, France Corresponding author: e-mail [email protected]Search for more papers by this author Dominik Metten, Dominik Metten Institut de Physique et Chimie des Matériaux de Strasbourg and NIE, UMR 7504, Université de Strasbourg and CNRS, 23 rue du Lœss, BP43, 67034 Strasbourg Cedex 2, FranceSearch for more papers by this authorGuillaume Froehlicher, Guillaume Froehlicher Institut de Physique et Chimie des Matériaux de Strasbourg and NIE, UMR 7504, Université de Strasbourg and CNRS, 23 rue du Lœss, BP43, 67034 Strasbourg Cedex 2, FranceSearch for more papers by this authorStéphane Berciaud, Corresponding Author Stéphane Berciaud [email protected] Institut de Physique et Chimie des Matériaux de Strasbourg and NIE, UMR 7504, Université de Strasbourg and CNRS, 23 rue du Lœss, BP43, 67034 Strasbourg Cedex 2, France Corresponding author: e-mail [email protected]Search for more papers by this author First published: 14 August 2015 https://doi.org/10.1002/pssb.201552314Citations: 11Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract We report on strong interference effects on the ratio of the integrated intensities of the Raman 2D- and G-mode features (herein denoted ) in suspended graphene monolayers. Free from substrate-induced doping and residual charge inhomogeneity, suspended samples are an ideal platform to study the intrinsic properties of graphene. Here, we demonstrate that , measured on a pressurized suspended graphene blister, depends very sensitively on the distance between the bulged graphene membrane and the underlying substrate. The data obtained on three different samples are fit to theoretically predicted Raman enhancement factors and allow to extract an intrinsic, i.e., doping- and interference-free, value of for undoped, unscreened graphene at a laser photon energy of . References 1 J. S. Bunch, A. M. van der Zande, S. S. Verbridge, I. W. Frank, D. M. Tanenbaum, J. M. Parpia, H. G. Craighead, and P. L. 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