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Modeling and measurements of novel high k monolithic transformers

2003; Institute of Electrical and Electronics Engineers; Linguagem: Inglês

10.1109/mwsym.2003.1212595

2576-7216

Arafa H. Aly, Badawy El-Sharawy,

Advancements in Semiconductor Devices and Circuit Design

This paper presents modeling and measurements of a novel monolithic transformer with high coupling k and quality factor Q characteristics. The present transformer utilizes a Z-shaped multilayer metalization to increase k without sacrificing Q. The new transformer has been fabricated using Motorola 0.18 micron copper process. A simple 2-port lumped circuit model is used to model the new design. Experimental data shows a good agreement with predicted data obtained from an HFSS software simulator. An increase of about 10% in mutual coupling and 15% in Q has been achieved. For a modest increase in k of about 5%, Q can be increased by up to 20%.