Design of High-Reliability Differential Paired eFuse OTP Memory for Power ICs
2013; Volume: 17; Issue: 2 Linguagem: Inglês
10.6109/jkiice.2013.17.2.405
ISSN2288-4165
AutoresYoung-Bae Park, Liyan Jin, In-Hwa Choi, Pan-Bong Ha, Young‐Hee Kim,
Tópico(s)Semiconductor materials and devices
Resumo본 논문에서는 program-verify-read 모드를 갖는 고신뢰성 24bit differential paired eFuse OTP 메모리를 설계하였다. 제안된 program-verify-read 모드에서는 프로그램된 eFuse 저항의 변동을 고려하여 가변 풀-업 부하(variable pull-up load)를 갖는 센싱 마진 테스트 기능을 수행하는 동시에 프로그램 데이터와 read 데이터를 비교하여 PFb(pass fail bar) 핀으로 비교 결과를 출력한다. 그리고 모의실험 결과 program-verify-read 모드에서 24-비트 differential paired eFuse OTP와 24-비트 듀얼 포트 eFuse OTP IP의 센싱 저항은 각각 $4k{\Omega}$ 과 $50k{\Omega}$ 으로 differential paired eFuse OTP의 센싱 저항이 작게 나왔다. In this paper, a high-reliability differential paired 24-bit eFuse OTP memory with program-verify-read mode for PMICs is designed. In the proposed program-verify-read mode, the eFuse OTP memory can do a sensing margin test with a variable pull-up load in consideration of programmed eFuse resistance variation and can output a comparison result through a PFb (pass fail bar) pin by comparing a programmed datum with its read one. It is verified by simulation results that the sensing resistance is lower with $4k{\Omega}$ in case of the designed differential paired eFuse OTP memory than $50k{\Omega}$ in case of its dual-port eFuse OTP memory.
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