Electromechanical properties of Nd-doped Bi4Ti3O12 films: A candidate for lead-free thin-film piezoelectrics
2003; American Institute of Physics; Volume: 82; Issue: 11 Linguagem: Inglês
10.1063/1.1560864
ISSN1520-8842
AutoresHiroshi Maiwa, Naoya Iizawa, Daichi Togawa, Takashi Hayashi, Wataru Sakamoto, Mio Yamada, Shin‐ichi Hirano,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoNeodymium-doped Bi4Ti3O12 (BNT) films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. Bi4Ti3O12, Bi3.25La0.75Ti3O12, and Bi3.25Nd0.75Ti3O12 films were fabricated by chemical solution deposition on Pt/TiOx/SiO2/Si substrates. Nd substitution promoted random orientation with low (00l) diffraction peaks. The 1-μm-thick Bi3.25Nd0.75Ti3O12 film annealed at 750 °C exhibited a remanent polarization of 26 μC/cm2. Typical butterfly field-induced strain loops were obtained in the BNT film capacitors. The electrically induced strain is 8.4×10−4 under the bipolar driving field of 220 kV/cm. These results show that BNT is a promising candidate for use in lead-free thin-film piezoelectrics.
Referência(s)