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Electrical Switching in Cu-As-Se Glasses

2011; Wiley; Volume: 2; Issue: 1 Linguagem: Inglês

10.1111/j.2041-1294.2011.00038.x

2041-1294

Ramesh Karuppannan, Vijaya Ganesan, S. Asokan,

Chalcogenide Semiconductor Thin Films

Electrical switching in Cu x As 40 Se 60− x glasses has been studied over a wide composition range for 0≤ x ≤32. The glasses with lower Cu concentrations ( x <15) do not exhibit switching, whereas glasses in the range 15≤ x ≤25 show a threshold type switching. The glasses in the range 26≤ x ≤29 exhibited an unusual switching from low‐resistance to high‐resistance state. For x ≥30, the glasses are found to show a memory switching. The thermally crystallized samples indicate that the structural network is characterized by Cu 3 AsSe 4 and As 2 Se 3 for x <15 and by Cu 3 AsSe 4 and Cu 2 As 3 for x ≥25. The composition range 15≤ x ≤20 is characterized only by Cu 3 AsSe 4 structural units. The samples cooled from their melt show only the ternary Cu 3 AsSe 4 for x ≤20. For x >20, precipitates of “As” have also been observed along with Cu 3 AsSe 4 and Cu 2 As 3 phases. The present studies provided a unique way to understand the electrical switching exhibited by chalcogenide glasses based on the thermal model and the filament formation .