ESD in silicon integrated circuits
1996; Elsevier BV; Volume: 36; Issue: 4 Linguagem: Inglês
10.1016/s0026-2714(96)90047-5
ISSN1872-941X
AutoresE. A. Amerasekera, Charvaka Duvvury,
Tópico(s)Physical Unclonable Functions (PUFs) and Hardware Security
ResumoTo offer the electrostatic discharge (ESD) protection in high-frequency integrated circuits, a new RC-diode ESD protection design is presented in this work. The protection circuit combines the ESD diodes with the embedded silicon-controlled rectifier (SCR) and the inserting resistors to provide the appropriate performances including ESD-current-handling ability, signal loss, and layout area. Based on the experimental results in CMOS chip, the new design is a proper solution for ESD protection in high-frequency applications.
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