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Spin-Torque Oscillator using a Perpendicular Polarizer with Double Free Layers

2008; The Korean Magnetics Society; Volume: 13; Issue: 4 Linguagem: Inglês

10.4283/jmag.2008.13.4.153

2233-6656

Soo-Man Seo, Kyung‐Jin Lee,

Advanced Memory and Neural Computing

We conducted a micromagnetic modeling study to investigate the spin torque oscillator (STO) using a perpendicular polarizer. We used an additional layer of negative anisotropy constant materials (NAM) on a conventional STO. For the NAM layer, the magnetic easy plane is parallel to the in-plane easy axis of the free layer, and inhibits the development of the out-of-plane component of the magnetization in the free layer. As a result, this new type of STO provides a high frequency limit up to 50 GHz.