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Strain effects in lattice-mismatched InxGa1−xAs/InyAl1−yAs coupled double quantum wells

1998; American Institute of Physics; Volume: 73; Issue: 1 Linguagem: Inglês

10.1063/1.121723

1520-8842

T. W. Kim, M. Jung, D. U. Lee, Yoon-Seop Lim, Jeong Yong Lee,

Semiconductor materials and devices

Transmission electron microscopy (TEM) and Raman scattering spectroscopy measurements were performed to investigate strain effects in lattice-mismatched InxGa1−xAs/InyAl1−yAs modulation-doped coupled double quantum wells. The high-resolution TEM images showed that a 100-Å In0.8Ga0.2As deep quantum well and a 100-Å In0.53Ga0.47As shallow quantum well were separated by a 30-Å In0.25Ga0.75As embedded potential barrier. The selected-area electron-diffraction pattern obtained from TEM measurements on the InxGa1−xAs/InyAl1−yAs double quantum well showed that the InxGa1−xAs active layers were grown pseudomorphologically on the InP buffer layer. The values of the strain and the stress of the InxGa1−xAs layers were determined from the electron-diffraction pattern. Based on the TEM results, a possible crystal structure for the InxGa1−xAs/InyAl1−yAs coupled double quantum well is presented.