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Structural and Electrical Properties of Bi[sub 5]Nb[sub 3]O[sub 15] Thin Films for MIM Capacitors with Low Processing Temperatures

2008; Institute of Physics; Volume: 155; Issue: 8 Linguagem: Inglês

10.1149/1.2936260

1945-7111

Kyung‐Hoon Cho, Chang‐Hak Choi, Young Hun Jeong, Sahn Nahm, Chong‐Yun Kang, Seok-Jin Yoon, Hwack-Joo Lee,

Microwave Dielectric Ceramics Synthesis

thin films were well formed on a substrate using radio-frequency magnetron sputtering. The crystalline phase was developed for the films grown at temperatures above , but it decomposed into the phase when the growth temperature exceeded , probably due to the evaporation of . The dielectric constant of the film grown at room temperature was approximately 42 and increased with increasing growth temperature, reaching a maximum value of 160 for the film grown at . In particular, the films grown in the temperature range of showed a high value of 70 with a low dissipation factor , and their leakage current density was very low with a high breakdown voltage. Therefore, films grown at low temperatures can be a good candidate material for metal–insulator–metal (MIM) capacitors which require low processing temperatures.