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Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis

2010; American Physical Society; Volume: 82; Issue: 7 Linguagem: Inglês

10.1103/physrevb.82.075415

1550-235X

Dmitry Yu. Usachov, V. K. Adamchuk, Danny Haberer, A. Grüneis, Hermann Sachdev, Alexei B. Preobrajenski, C. Laubschat, D. V. Vyalikh,

2D Materials and Applications

We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride ($h$-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the $h$-BN layer from the ``rigid'' into the ``quasifreestanding'' state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding $h$-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/$h$-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.