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Silicon carbide nanolayers as a solar cell constituent

2014; Wiley; Volume: 212; Issue: 1 Linguagem: Espanhol

10.1002/pssa.201431357

1862-6319

В. С. Захвалинский, Е А Пилюк, I. Yu. Gоncharov, А. В. Симашкевич, Д.А. Шербан, L. Bruc, N. Curmei, M. Rusu,

Silicon and Solar Cell Technologies

physica status solidi (a)Volume 212, Issue 1 p. 184-188 Original Paper Silicon carbide nanolayers as a solar cell constituent V. Zakhvalinskii, V. Zakhvalinskii State University of Belgorod, 85, Pobedy str., 308015 Belgorod, RussiaSearch for more papers by this authorE. Piliuk, E. Piliuk State University of Belgorod, 85, Pobedy str., 308015 Belgorod, RussiaSearch for more papers by this authorI. Goncharov, I. Goncharov State University of Belgorod, 85, Pobedy str., 308015 Belgorod, RussiaSearch for more papers by this authorA. Simashkevich, Corresponding Author A. Simashkevich Institute of Applied Physics, 5 Academiei str, 2028 Chisinau, Republic of MoldovaCorresponding author: e-mail alexeisimashkevich@hotmail.com, Phone: +373 22 738054, Fax: +373 22 738149Search for more papers by this authorD. Sherban, D. Sherban Institute of Applied Physics, 5 Academiei str, 2028 Chisinau, Republic of MoldovaSearch for more papers by this authorL. Bruc, L. Bruc Institute of Applied Physics, 5 Academiei str, 2028 Chisinau, Republic of MoldovaSearch for more papers by this authorN. Curmei, N. Curmei Institute of Applied Physics, 5 Academiei str, 2028 Chisinau, Republic of MoldovaSearch for more papers by this authorM. Rusu, M. Rusu Institute of Applied Physics, 5 Academiei str, 2028 Chisinau, Republic of Moldova Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin, GermanySearch for more papers by this author V. Zakhvalinskii, V. Zakhvalinskii State University of Belgorod, 85, Pobedy str., 308015 Belgorod, RussiaSearch for more papers by this authorE. Piliuk, E. Piliuk State University of Belgorod, 85, Pobedy str., 308015 Belgorod, RussiaSearch for more papers by this authorI. Goncharov, I. Goncharov State University of Belgorod, 85, Pobedy str., 308015 Belgorod, RussiaSearch for more papers by this authorA. Simashkevich, Corresponding Author A. Simashkevich Institute of Applied Physics, 5 Academiei str, 2028 Chisinau, Republic of MoldovaCorresponding author: e-mail alexeisimashkevich@hotmail.com, Phone: +373 22 738054, Fax: +373 22 738149Search for more papers by this authorD. Sherban, D. Sherban Institute of Applied Physics, 5 Academiei str, 2028 Chisinau, Republic of MoldovaSearch for more papers by this authorL. Bruc, L. Bruc Institute of Applied Physics, 5 Academiei str, 2028 Chisinau, Republic of MoldovaSearch for more papers by this authorN. Curmei, N. Curmei Institute of Applied Physics, 5 Academiei str, 2028 Chisinau, Republic of MoldovaSearch for more papers by this authorM. Rusu, M. Rusu Institute of Applied Physics, 5 Academiei str, 2028 Chisinau, Republic of Moldova Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin, GermanySearch for more papers by this author First published: 11 September 2014 https://doi.org/10.1002/pssa.201431357Citations: 6Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract Thin films of predominantly amorphous n-type SiC were prepared by non-reactive magnetron sputtering in an Ar atmosphere. A previously synthesized SiC was used as a solid-state target. Deposition was carried out on a cold substrate of p-type Si (100) with a resistivity of 2 Ωcm. The Raman spectrum shows a dominant band at 982 cm−1, i.e., in the spectral region characteristic for SiC. It was found that the root mean square roughness varies from about 0.3 nm to 9.0 nm when the film thickness changes from about 2 nm to 56 nm, respectively. Transmission electron microscopy studies showed that SiC thin films consist predominantly of an amorphous phase with inclusions of very fine nanocrystallites. A heterostructure consisting of a p-type Si (100) and a layer of predominantly amorphous n-type SiC was fabricated and studied. The investigation of its electrical and photoelectric properties shows that the entire space charge region is located in Si. This is in addition confirmed by the spectral dependence of the p-Si/n-SiC photosensitivity. The barrier height at the p-Si/n-SiC interface estimated from dark I–V characteristics is of the order of 0.9–1.0 eV. Load I–V characteristics of p-Si/n-SiC-nanolayer solar cells demonstrate under standard AM1.5 illumination conditions a conversion efficiency of 7.22%. Citing Literature Volume212, Issue1January 2015Pages 184-188 RelatedInformation