Electrical compensation by Ga vacancies in Ga2O3 thin films
2015; American Institute of Physics; Volume: 106; Issue: 24 Linguagem: Inglês
10.1063/1.4922814
ISSN1520-8842
AutoresE. Korhonen, F. Tuomisto, D. Gogova, G. Wagner, M. Baldini, Zbigniew Galazka, Robert Schewski, M. Albrecht,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoThe authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga2O3 thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga2O3 thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In2O3, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as Oi.
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