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VTEAM: A General Model for Voltage-Controlled Memristors

2015; Institute of Electrical and Electronics Engineers; Volume: 62; Issue: 8 Linguagem: Inglês

10.1109/tcsii.2015.2433536

1558-3791

Shahar Kvatinsky, M. Nisvo Ramadan, Eby G. Friedman, Avinoam Kolodny,

Ferroelectric and Negative Capacitance Devices

Memristors are novel electrical devices used for a variety of applications, including memory, logic circuits, and neuromorphic systems. Memristive technologies are attractive due to their nonvolatility, scalability, and compatibility with CMOS. Numerous physical experiments have shown the existence of a threshold voltage in some physical memristors. Additionally, as shown in this brief, some applications require voltage-controlled memristors to operate properly. In this brief, a Voltage ThrEshold Adaptive Memristor (VTEAM) model is proposed to describe the behavior of voltage-controlled memristors. The VTEAM model extends the previously proposed ThrEshold Adaptive Memristor (TEAM) model, which describes current-controlled memristors. The VTEAM model has similar advantages as the TEAM model, i.e., it is simple, general, and flexible, and can characterize different voltage-controlled memristors. The VTEAM model is accurate (below 1.5% in terms of the relative root-mean-square error) and computationally efficient as compared with existing memristor models and experimental results describing different memristive technologies.