Bias-Dependent Effective Channel Length for Extraction of Subgap DOS by Capacitance–Voltage Characteristics in Amorphous Semiconductor TFTs
2015; Institute of Electrical and Electronics Engineers; Volume: 62; Issue: 8 Linguagem: Inglês
10.1109/ted.2015.2443492
ISSN1557-9646
AutoresHyun-Jun Choi, Jungmin Lee, Hagyoul Bae, Sung‐Jin Choi, Dae Hwan Kim, Dong Myong Kim,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoBias-dependent effective channel length [L eff (VG)] is empirically modeled with a channel conduction factor [α(VG)] for a consistent capacitance-voltage (C-V) characterization of the intrinsic subgap density of states (DOS) over the bandgap with the sub-bandgap photoresponsive C-V technique in amorphous thin-film transistors. We define the effective channel length L eff (VG) through the product of the empirical channel conduction factor [α(VG)] and the metallurgical channel length (Lm). We confirm that the gate bias-dependent channel conduction effect is significant in the subgap DOS far from the conduction band edge (EC) due to the low conductivity of the channel under subthreshold bias.
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