Growth and characterization of Sin28/Sin30 isotope superlattices
2003; American Institute of Physics; Volume: 83; Issue: 12 Linguagem: Inglês
10.1063/1.1613365
ISSN1520-8842
AutoresT. Kojima, R. Nebashi, Kohei M. Itoh, Y. Shiraki,
Tópico(s)Semiconductor materials and interfaces
ResumoWe present silicon isotope superlattices: Si structures in which alternating layers are predominantly composed of the stable isotopes Si28 and Si30. Using solid-source molecular beam epitaxy, the thickness of each isotope layer has been precisely controlled to produce isotope superlattices denoted Sin28/Sin30, where n is the number of atomic monolayers, each one 0.136 nm thick. We have produced and studied Si828/Si830, Si1228/Si1230, and Si2428/Si2430, whose structures have been confirmed by secondary ion mass spectrometry. Further confirmation was provided by Raman spectroscopy, which showed the confinement of phonons within specific isotope layers (Si28 or Si30 layers) due to the mass periodicity created by isotope layering.
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