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Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

2013; American Institute of Physics; Volume: 103; Issue: 3 Linguagem: Inglês

10.1063/1.4813823

1520-8842

E. García-Hemme, R. García-Hernansanz, J. Olea, David Pastor, A. del Prado, I. Mártil, G. González-Dı́az,

Silicon and Solar Cell Technologies

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal transition limit show an important increase of the photoresponse with respect to a Si reference sample. Their photoresponse extends into the far infrared region and presents a sharp photoconductivity edge that moves towards lower photon energies as the temperature decreases. The increase of the value of the photoresponse is contrary to the classic understanding of recombination centers action and supports the predictions of the insulator-metal transition theory.