Magnetic field effects on float-zone Si crystal growth
1986; Elsevier BV; Volume: 76; Issue: 1 Linguagem: Inglês
10.1016/0022-0248(86)90015-1
ISSN1873-5002
AutoresGlenn D. Robertson, Dennis J. O'Connor,
Tópico(s)nanoparticles nucleation surface interactions
ResumoTransverse magnetic fields up to 5500 G have been applied during the growth of Ga-doped silicon crystals of 30 mm diameter. Crystals have been grown at 4 mm/min at rotation rates between 13 and 0 rpm. The strong fields have pronounced effects on the growth interface shape, on the Ga distribution, and on the crystal morphology. For non-rotating crystals, the magnetic field produces a crystal with an elliptical cross section, with the major axis aligned with the field direction. In these crystals the interface assumes a cylindrical shape with the generatrix aligned along the field direction. Oscillations in dopant concentration with a frequency of approximately 2 per minute are seen in the non-rotating crystals.
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