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Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC

2004; Springer Nature; Linguagem: Inglês

10.1007/978-3-642-18870-1_18

2628-5304

Nguyên Tiên Són, Clas Persson, U. Lindefelt, Weimin Chen, B. K. Meyer, D.M. Hofmann, Erik Janzén,

Copper Interconnects and Reliability

Many fundamental physical properties of semiconductors are governed by the structure of the energy bands. Electrons in the conduction band (CB) or holes in the valence band (VB) have an effective mass m * or m * , respectively, which is usually anisotropic depending on the shape of the corresponding bands. Effective masses can be calculated from the curvature of the energy bands or can be experimentally determined through their correlation with other parameters in processes involving the transport of electrons and/or holes. In the 1960s Hall effect and infrared Faraday rotation [1, 2] were used to determine electron effective masses in 6H- and 15R-SiC. Other experimental methods such as Zeeman splitting of photoluminecence lines, magnetoresistance, infrared light reflection, and far-infrared absorption [3]–[8] were also employed to study electron effective masses in common polytypes. In those experiments, effective mass values were determined rather indirectly via other parameters using theoretical models. The lack of reliable experimental data due to low crystalline quality of the 6H- and 15R-SiC in those days together with the use of an over-simplified effective mass model have resulted in largely scattered values of the effective masses.