Self-Aligned Inversion-Channel In$_{0.53}$Ga$_{0.47}$As Metal–Oxide–Semiconductor Field-Effect Transistors with In-situ Deposited Al$_{2}$O$_{3}$/Y$_{2}$O$

Artigo Acesso aberto Revisado por pares

Self-Aligned Inversion-Channel In$_{0.53}$Ga$_{0.47}$As Metal–Oxide–Semiconductor Field-Effect Transistors with In-situ Deposited Al$_{2}$O$_{3}$/Y$_{2}$O$_{3}$ as Gate Dielectrics

2011; Institute of Physics; Volume: 4; Issue: 11 Linguagem: Inglês

10.1143/apex.4.114202

ISSN

1882-0786

Autores

Pen Chang, Han-Chin Chiu, T. H. Lin, Mao Lin Huang, Wen-Hsin Chang, Shaoyun Wu, Kang-Hua Wu, M. Hong, J. Kwo,

Tópico(s)

Electronic and Structural Properties of Oxides

Resumo

In-situ ultrahigh-vacuum-deposited Y2O3 2–3-monolayer-thick on freshly grown In0.53Ga0.47As with an Al2O3 cap were employed as a gate dielectric. A low interfacial density of states of (8–9)×1011 eV-1 cm-2 near the midgap has been measured using the conductance method. The strong Y2O3/InGaAs interfacial bonding, revealed using X-ray photoelectron spectroscopy, enables attainment of an atomically smooth interface with 750 °C annealing. Low subthreshold swing of 97 mV/decade, high drain current of 1.5 mA/µm, high transconductance of 0.77 mS/µm, and field-effect mobility of 2,100 cm2 V-1 s-1 were achieved in a self-aligned inversion-channel InGaAs metal–oxide–semiconductor field-effect-transistor of 1 µm gate length.

Ver no editor

Altmetric

PlumX

Entrar

Lembrar minha senha

Receber meu e-mail de confirmação

Self-Aligned Inversion-Channel In$_{0.53}$Ga$_{0.47}$As Metal–Oxide–Semiconductor Field-Effect Transistors with In-situ Deposited Al$_{2}$O$_{3}$/Y$_{2}$O$_{3}$ as Gate Dielectrics